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    • 2. 发明授权
    • Magnetic recording medium and process for producing the same
    • 磁记录介质及其制造方法
    • US06221519B1
    • 2001-04-24
    • US09272622
    • 1999-03-19
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • G11B566
    • G11B5/7325G11B5/656G11B5/84G11B5/8404Y10S428/90
    • A magnetic recording medium comprising: a plastic substrate; a nickel oxide underlayer formed on said substrate; and a cobalt-containing maghemite thin film formed on said nickel oxide underlayer, containing cobalt at a molar ratio of cobalt to iron of 0.01:1 to 0.1:1, and having either a spacing of a plane (311) of not more than 2.510 Å, a spacing of a plane (222) of not more than 2.415 Å or a spacing of a plane (220) of not more than 2.950 Å, a ratio value of an X-ray diffraction pattern peak intensity of either of the planes (311), (222) and (220) of said cobalt-containing maghemite thin film to an X-ray diffraction pattern peak intensity of the plane (400) thereof being more than 0.5. Such magnetic recording medium suitably applicable to existent magnetic recording systems using a ring-type magnetic head and capable of using a plastic substrate for providing a magnetic recording medium for high-density recording.
    • 一种磁记录介质,包括:塑料基板;形成在所述基板上的氧化镍底层; 和在所述氧化镍底层上形成的含钴的磁赤铁矿薄膜,其含有钴与铁的摩尔比为0.01:1至0.1:1的钴,并且具有不大于2.510的平面(311)的间隔 ,平面(222)的间距不大于2.415或平面(220)的间距不大于2.950,任一平面(311)的X射线衍射图峰值强度的比值 ),所述含钴磁赤铁矿薄膜的(222)和(220)相对于所述平面(400)的X射线衍射图峰值强度大于0.5。 这种磁记录介质适用于使用环形磁头的现有磁记录系统,并能够使用塑料基板提供用于高密度记录的磁记录介质。
    • 4. 发明授权
    • Process for producing magnetic recording medium
    • 磁记录介质的制造方法
    • US06268024B1
    • 2001-07-31
    • US09276520
    • 1999-03-25
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • H05H100
    • G11B5/7325G11B5/656G11B5/84G11B5/8404
    • A magnetic recording medium is prepared by forming on a plastic substrate, a nickel oxide underlayer having a plane (200) which is predominantly oriented in parallel with the surface of the plastic substrate, then forming on the nickel oxide underlayer at a substrate temperature of less 240° C., a cobalt-containing magnetite thin film having a plane (400) which is predominantly oriented in parallel with the surface of the plastic substrate, and finally oxidizing the cobalt-containing magnetite thin film in a plasma-activated oxygen atmosphere containing a rare gas at a substrate temperature of less than 240° C. while incorporating the rare gas into oxygen. This results in a cobalt-containing maghemite thin film as a perpendicular magnetic film having a spacing of a plane (400) of not more than 2.082 Å. The magnetic recording medium so produced is useful for high-density recording using a plastic substrate.
    • 通过在塑料基板上形成氧化镍底层制备磁记录介质,所述氧化镍底层具有主要与塑料基板的表面平行取向的平面(200),然后在较低的基板温度下在氧化镍底层上形成 240℃的含钴磁铁矿薄膜,其具有主要与塑料基板的表面平行取向的平面(400),最后在等离子体激活的氧气氛中氧化含钴磁铁矿薄膜,其中含有 在低于240℃的衬底温度下的稀有气体,同时将稀有气体并入氧气中。 这导致含有钴的磁赤铁矿薄膜作为垂直磁性膜,其平面(400)的间隔不大于2.082。 所制造的磁记录介质对于使用塑料基板的高密度记录是有用的。
    • 5. 发明授权
    • Titanium alloy vacuum and vacuum part
    • 钛合金真空和真空部分
    • US06841265B2
    • 2005-01-11
    • US10312701
    • 2002-03-18
    • Hiroki KurisuMitsuru MatsuuraSetsuo YamamotoMasaki HesakaAtsushi Takemura
    • Hiroki KurisuMitsuru MatsuuraSetsuo YamamotoMasaki HesakaAtsushi Takemura
    • B01J3/00B01J3/03C22C14/00C23C8/12C23C8/16C23C16/44B23P15/00
    • C23C8/16C22C14/00Y10S428/923Y10T428/12993
    • The objective of the present invention is to provide a titanium alloy vacuum container and vacuum parts that can easily achieve an ultra-high vacuum in a short time through vacuum evacuation.The titanium alloy of the titanium alloy vacuum container and vacuum parts has a compact structure composed of fine grains, each having a size of approximately not more than 10 μm, with a surface that is exposed to at least vacuum being set to have a surface roughness of not more than 50 nm; and in this structure, preferably, the surface roughness thereof may be set to not more than 10 nm, the titanium alloy may have a hardness in a range of not less than 230 Hv to not more than 310 Hv, and the titanium alloy may have a passivity surface film made by a thin titanium oxide layer or nitride layer that is formed on the surface thereof. The titanium alloy, which is desirably used in such titanium alloy vacuum container and vacuum parts, contains 0.3 wt. % to 0.5 wt. % of iron and 0.3 wt. % to 0.5 wt. % of oxygen, and the remainder thereof is made from Ti obligatory impurities.
    • 本发明的目的是提供一种钛合金真空容器和真空部件,其可以通过真空排气在短时间内容易地实现超高真空。钛合金真空容器和真空部件的钛合金具有紧凑的结构 由细颗粒组成,每个细颗粒具有大约不超过10μm的尺寸,其中至少暴露于真空的表面被设定为具有不大于50nm的表面粗糙度; 在该结构中,优选其表面粗糙度可以设定为不大于10nm,钛合金的硬度可以在230Hv以上且不高于310Hv的范围内,并且钛合金可以具有 由形成在其表面上的薄氧化钛层或氮化物层制成的无源表面膜。 希望用于这种钛合金真空容器和真空部件中的钛合金含有0.3wt。 %至0.5wt。 铁含量为0.3% %至0.5wt。 的氧气,其余部分由Ti强制性杂质制成。
    • 6. 发明授权
    • Method of grinding wafer
    • 研磨晶圆的方法
    • US08025556B2
    • 2011-09-27
    • US12349770
    • 2009-01-07
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • B24B1/00
    • B24B37/042B24B27/0076
    • A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.
    • 一种研磨晶片的方法,包括:晶片保持步骤,用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度,对保持在卡盘台的保持面上的晶片进行粗磨,粗磨加工, 轮; 以及精磨步骤,通过将精磨轮的研磨面与夹盘的保持面平行地定位,使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。