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1. 发明授权

US5763010A Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers 失效
标题翻译：卤素掺杂膜的热后沉积处理以提高膜的稳定性并减少卤素向互连层的迁移
公开(公告)号：US5763010A
公开(公告)日：1998-06-09
申请号：US646862
申请日：1996-05-08
申请人： Ted Guo , Barney M. Cohen , Amrita Verma
发明人： Ted Guo , Barney M. Cohen , Amrita Verma
IPC分类号： C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/316 , H01L21/768 , B05D3/02 , B05D1/36 , H05H1/24
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , G06Q30/0284 , H01L21/02274 , H01L21/02318 , H01L21/02362 , H01L21/3105 , H01L21/31629 , H01L21/76801 , H01L21/76828
摘要： A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300.degree. and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
摘要翻译：一种稳定卤素掺杂氧化硅膜以减少在后续处理步骤中从所述膜迁移的卤素原子的方法。将卤素掺杂的膜沉积在衬底上，然后进行脱气步骤，其中在沉积扩散阻挡层之前将膜短暂加热至约300℃至550℃的温度。据信这样的热处理步骤从卤素掺杂的膜去除松散键合的卤素原子，因此将该处理称为脱气步骤。在该实施方案的优选方案中，卤素掺杂氧化硅膜是经过脱气处理约35至50秒的FSG膜。

2. 发明授权

US6079354A Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers 失效
标题翻译：卤素掺杂膜的热后沉积处理以提高膜的稳定性并减少卤素向互连层的迁移
公开(公告)号：US6079354A
公开(公告)日：2000-06-27
申请号：US65758
申请日：1998-04-24
申请人： Ted Guo , Barney M. Cohen , Amrita Verma
发明人： Ted Guo , Barney M. Cohen , Amrita Verma
IPC分类号： C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/316 , H01L21/768 , C23C16/00 , G06F19/00
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , G06Q30/0284 , H01L21/02274 , H01L21/02318 , H01L21/02362 , H01L21/3105 , H01L21/31629 , H01L21/76801 , H01L21/76828
摘要： A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300 and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
摘要翻译：一种稳定卤素掺杂氧化硅膜以减少在后续处理步骤中从所述膜迁移的卤素原子的方法。将卤素掺杂的膜沉积在衬底上，然后进行脱气步骤，其中在沉积扩散阻挡层之前将膜短暂加热至约300至550℃之间的温度。据信这样的热处理步骤从卤素掺杂的膜去除松散键合的卤素原子，因此将该处理称为脱气步骤。在该实施方案的优选方案中，卤素掺杂氧化硅膜是经过脱气处理约35至50秒的FSG膜。

3. 发明授权

US07014887B1 Sequential sputter and reactive precleans of vias and contacts 有权
标题翻译：连续溅射和通孔和触点的反应预处理
公开(公告)号：US07014887B1
公开(公告)日：2006-03-21
申请号：US09388989
申请日：1999-09-02
申请人： Barney M. Cohen , Suraj Rengarajan , Xiangbing Li , Kenny King-Tai Ngan , Peijun Ding
发明人： Barney M. Cohen , Suraj Rengarajan , Xiangbing Li , Kenny King-Tai Ngan , Peijun Ding
IPC分类号： B05D3/06 , B08B7/00 , C23C14/02 , H05H1/46 , H01L21/3205
CPC分类号： C23C14/022 , B08B7/0035 , H01J37/321 , H01L21/02063 , H01L21/2855 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture. The invention also provides cleaning the patterned dielectric layer in a processing chamber with a first plasma consisting essentially of argon, wherein the first plasma is generated by supplying power to a coil surrounding the processing chamber and supplying bias to a substrate support member supporting the substrate, cleaning the patterned dielectric layer in the processing chamber with a second plasma consisting essentially of hydrogen and helium, wherein the second plasma is generated by increasing the supply of power to the coil surrounding the processing chamber and reducing the supply of bias to the substrate support member supporting the substrate, depositing a barrier layer on the patterned dielectric layer after exposing the dielectric layer to the first plasma and the second plasma, and depositing a metal on the barrier layer. Furthermore, the sequential plasma treatments can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, etch chambers, and other plasma processing chambers.
摘要翻译：本发明通常提供了一种改善沉积在图案化电介质层上的金属的填充和电性能的方法。蚀刻图案化电介质层中诸如过孔和沟槽的孔，以增强填充，然后在相同的室中进行清洗以减少孔内的金属氧化物。本发明还提供了在具有基本上由氩组成的第一等离子体的处理室中清洁图案化的介电层，其中通过向围绕处理室的线圈供电并且向支撑衬底的衬底支撑构件提供偏压来产生第一等离子体，用基本上由氢和氦组成的第二等离子体清洁处理室中的图案化电介质层，其中通过增加对处理室周围的线圈的功率供给并减少对衬底支撑构件的偏压供应来产生第二等离子体支撑衬底，在将介电层暴露于第一等离子体和第二等离子体之后，在图案化的介电层上沉积阻挡层，以及在阻挡层上沉积金属。此外，顺序等离子体处理可以在包括预清洁室，物理气相沉积室，蚀刻室和其它等离子体处理室的综合工艺顺序的各种等离子体处理室中实施。

4. 发明授权

US6110836A Reactive plasma etch cleaning of high aspect ratio openings 有权
标题翻译：反应性等离子体蚀刻清洗高纵横比开口
公开(公告)号：US6110836A
公开(公告)日：2000-08-29
申请号：US298065
申请日：1999-04-22
申请人： Barney M. Cohen , Jingang Su , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Jingang Su , Kenny King-Tai Ngan
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/76804 , H01L21/76814
摘要： Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber, preventing re-deposition of oxides on the surface of the substrate or on the sidewalls or bottom of the openings. When the substrate is mounted in a plasma chamber having dual power sources that can form a plasma above the substrate and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.
摘要翻译：可以通过使用反应性含卤素气体和诸如氦的载气的等离子体气体前体混合物，从具有高纵横比孔的基底中除去天然氧化物。在等离子体中产生的轻质离子与氧反应产生非常易挥发的含氧物质，其可以通过等离子体室的排气系统容易地除去，从而防止氧化物在基材表面或侧壁或底部再沉积的开口。当基板安装在具有双电源的等离子体室中时，其可以在基板上形成等离子体并且可以向基板施加偏压，所以快速形成锥形开口，其可容易地填充而不形成空隙。

5. 发明授权

US6077353A Pedestal insulator for a pre-clean chamber 失效
标题翻译：用于预清洁室的基座绝缘子
公开(公告)号：US6077353A
公开(公告)日：2000-06-20
申请号：US88759
申请日：1998-06-02
申请人： Mohamed A. Al-Sharif , Bradley O. Stimson , Debabrata Ghosh , Barney M. Cohen , Kenny King-Tai Ngan , Murali Narasimhan
发明人： Mohamed A. Al-Sharif , Bradley O. Stimson , Debabrata Ghosh , Barney M. Cohen , Kenny King-Tai Ngan , Murali Narasimhan
IPC分类号： H01J37/20 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C13/02
CPC分类号： H01L21/67069 , H01J2237/022
摘要： The invention generally provides an apparatus that reduces backside sputtering of the substrate in a pre-clean chamber and other etch chambers. The invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit. One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.
摘要翻译：本发明通常提供了一种在预清洁室和其它蚀刻室中减少衬底的背面溅射的装置。本发明还提供了一种减少材料从处理套件表面上形成的膜剥落并延长处理套件规定寿命的装置。本发明的一个方面提供一种用于支撑衬底的装置，包括接触衬底的中心部分的支撑座和围绕支撑座的绝缘体，绝缘体具有从衬底的周缘延伸的斜面部分。

6. 发明授权

US06589890B2 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 失效
公开(公告)号：US06589890B2
公开(公告)日：2003-07-08
申请号：US10075510
申请日：2002-02-12
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21597
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.

7. 发明授权

US5685941A Inductively coupled plasma reactor with top electrode for enhancing plasma ignition 失效
标题翻译：具有顶部电极的电感耦合等离子体反应器，用于增强等离子体点火
公开(公告)号：US5685941A
公开(公告)日：1997-11-11
申请号：US561144
申请日：1995-11-21
申请人： John Forster , Barney M. Cohen , Bradley O. Stimson , George Proulx
发明人： John Forster , Barney M. Cohen , Bradley O. Stimson , George Proulx
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , H01L21/00 , C23C14/34
CPC分类号： H01J37/32091 , H01J37/321 , H05H1/46
摘要： A plasma reactor for carrying out plasma processing of a semiconductor substrate includes a vacuum chamber including apparatus for introducing a gas into the interior thereof, an induction coil encircling a region of the vacuum chamber, the coil being connected across an RF power source, and an electrode positioned adjacent the region and connected to the RF power source for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source is coupled inductively rather than capacitively.
摘要翻译：用于进行半导体衬底的等离子体处理的等离子体反应器包括：真空室，包括用于将气体引入其内部的装置;环绕真空室的区域的感应线圈，所述线圈横跨RF电源连接，电极位于该区域附近并连接到RF电源，用于将RF功率电容耦合到真空室内部的气体。电极具有面对该区域的表面积，该表面积足够大以提供RF功率与该区域中的气体的电容耦合，足以促进点燃等离子体，但足够小，使得在等离子体的稳态维持期间，耦合到来自RF电源的等离子体的大部分RF功率被电感地耦合而不是电容耦合。

8. 发明授权

US07053002B2 Plasma preclean with argon, helium, and hydrogen gases 有权
标题翻译：具有氩，氦和氢气的等离子体预清洗液
公开(公告)号：US07053002B2
公开(公告)日：2006-05-30
申请号：US09206027
申请日：1998-12-04
申请人： Barney M. Cohen , Kenny King-Tai Ngan , Xiangbing Li
发明人： Barney M. Cohen , Kenny King-Tai Ngan , Xiangbing Li
IPC分类号： H01L21/302
CPC分类号： H01L21/76814 , H01L21/31116 , H01L21/76877
摘要： The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.
摘要翻译：本发明提供了一种用包含氩，氦和氢的混合物的等离子体预清洗图案化衬底的方法和装置。与氩气/氢气混合物相比，向氩气和氢气的气体混合物中添加氦气令人惊奇地增加了蚀刻速率。对于低于约75体积％的氩浓度，蚀刻速率得到改善。 RF功率是电容性地和电感耦合到等离子体以增强对蚀刻性能的控制。氩，氦和氢可以作为单独的气体或混合物提供。

9. 发明授权

US06547934B2 Reduction of metal oxide in a dual frequency etch chamber 失效
标题翻译：在双频蚀刻室中还原金属氧化物
公开(公告)号：US06547934B2
公开(公告)日：2003-04-15
申请号：US09082746
申请日：1998-05-21
申请人： Barney M. Cohen , Gilbert Hausmann , Vijay Parkhe , Zheng Xu
发明人： Barney M. Cohen , Gilbert Hausmann , Vijay Parkhe , Zheng Xu
IPC分类号： C25B500
CPC分类号： H01J37/321 , H01J37/32165 , H01L21/31122
摘要： The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.
摘要翻译：本发明通常提供从基材表面去除金属氧化物，特别是铜氧化物和氧化铝的装置和方法。首先，本发明消除了氧化铜从互连结构的底部溅射到互连部件的侧壁上，从而防止铜原子通过电介质材料的扩散和器件的劣化。本发明还消除了铜氧化物溅射到腔室侧壁上，这可最终剥落并引起衬底上的缺陷。从衬底表面还原金属氧化物的方法包括将衬底放置在等离子体处理室内，使包含氢气的处理气体流入室中，以及通过电感耦合将处理气体的等离子体保持在室内。该方法优选使用双频蚀刻室进行，其中在处理气体流中进行调节，RF功率和排气泵送速度以消除氧化铜的溅射并使还原反应最大化。

10. 发明授权

US06346489B1 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 有权
标题翻译：金属插塞的预清洗工艺可最大限度地降低对低kappa电介质的损伤
公开(公告)号：US06346489B1
公开(公告)日：2002-02-12
申请号：US09388991
申请日：1999-09-02
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21469
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.
摘要翻译：本发明是适用于制造低κ，含碳电介质中的金属塞的预清洗方法。更具体地，本发明是一种用于清洁半导体工件上的金属导体的接触面积的方法，以便使对覆盖金属的低κ，含碳电介质的损伤最小化。在低k电介质中形成接触开口以暴露下面的金属导体上的接触区域之后，通过将工件暴露于由含氢和氦气的混合物的等离子体分解形成的气氛中来清洁接触区域。令人惊讶的是，我们的预清洗工艺可以修复由先前的工艺步骤引起的介电损坏，例如用于除去光致抗蚀剂的氧等离子体灰化处理。

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