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1. 发明授权

US08592886B2 Erasable programmable single-ploy nonvolatile memory 有权
标题翻译：可擦除可编程单态非易失性存储器
公开(公告)号：US08592886B2
公开(公告)日：2013-11-26
申请号：US13572731
申请日：2012-08-13
申请人： Te-Hsun Hsu , Hsin-Ming Chen , Ching-Sung Yang , Wen-Hao Ching , Wei-Ren Chen
发明人： Te-Hsun Hsu , Hsin-Ming Chen , Ching-Sung Yang , Wen-Hao Ching , Wei-Ren Chen
IPC分类号： H01L29/788 , H01L29/06
CPC分类号： H01L27/11558 , G11C16/0433 , G11C2216/10 , H01L29/42328 , H01L29/7883 , H01L29/7885
摘要： An erasable programmable single-poly nonvolatile memory includes a floating gate transistor having a floating gate, a gate oxide layer under the floating gate, and a channel region; and an erase gate region, wherein the floating gate is extended to and is adjacent to the erase gate region. The gate oxide layer comprises a first portion above the channel region of the floating gate transistor and a second portion above the erase gate region, and a thickness of the first portion of the gate oxide layer is different from a thickness of the second portion of the gate oxide layer.
摘要翻译：可擦除可编程单一多晶硅非易失性存储器包括具有浮置栅极的浮动栅极晶体管，浮置栅极下方的栅极氧化物层和沟道区域; 和擦除栅极区，其中浮置栅极延伸到擦除栅极区并且与擦除栅极区相邻。栅极氧化物层包括位于浮动栅极晶体管的沟道区上方的第一部分和擦除栅极区上方的第二部分，并且栅极氧化物层的第一部分的厚度与第二部分的厚度不同栅氧化层。

2. 发明申请

US20130234228A1 ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY 有权
标题翻译：可擦除可编程的单槽非易失性存储器
公开(公告)号：US20130234228A1
公开(公告)日：2013-09-12
申请号：US13572731
申请日：2012-08-13
申请人： Te-Hsun Hsu , Hsin-Ming Chen , Ching-Sung Yang , Wen-Hao Ching , Wei-Ren Chen
发明人： Te-Hsun Hsu , Hsin-Ming Chen , Ching-Sung Yang , Wen-Hao Ching , Wei-Ren Chen
IPC分类号： H01L27/115
CPC分类号： H01L27/11558 , G11C16/0433 , G11C2216/10 , H01L29/42328 , H01L29/7883 , H01L29/7885
摘要： An erasable programmable single-poly nonvolatile memory includes a floating gate transistor having a floating gate, a gate oxide layer under the floating gate, and a channel region; and an erase gate region, wherein the floating gate is extended to and is adjacent to the erase gate region. The gate oxide layer comprises a first portion above the channel region of the floating gate transistor and a second portion above the erase gate region, and a thickness of the first portion of the gate oxide layer is different from a thickness of the second portion of the gate oxide layer.
摘要翻译：可擦除可编程单一多晶硅非易失性存储器包括具有浮置栅极的浮栅晶体管，浮置栅极下方的栅极氧化物层和沟道区域; 和擦除栅极区，其中浮置栅极延伸到擦除栅极区并且与擦除栅极区相邻。栅极氧化物层包括位于浮动栅极晶体管的沟道区上方的第一部分和擦除栅极区上方的第二部分，并且栅极氧化物层的第一部分的厚度与第二部分的厚度不同栅氧化层。

3. 发明申请

US20130237048A1 METHOD OF FABRICATING ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY 有权
公开(公告)号：US20130237048A1
公开(公告)日：2013-09-12
申请号：US13602404
申请日：2012-09-04
申请人： Te-Hsun Hsu , Hsin-Ming Chen , Wen-Hao Ching , Wei-Ren Chen
发明人： Te-Hsun Hsu , Hsin-Ming Chen , Wen-Hao Ching , Wei-Ren Chen
IPC分类号： H01L21/28
CPC分类号： H01L21/28 , H01L27/11558 , H01L27/1156 , H01L29/401
摘要： The present invention provides method of fabricating an erasable programmable single-poly nonvolatile memory, comprising steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gate oxide layer covered on a surface of the first area, wherein the second gate oxide layer is extended to and is adjacent to the second area; forming a DDD region in the second area; etching a portion of the second gate oxide layer above the second area; forming two polysilicon gates covered on the first and the second gate oxide layers; and defining a second type doped region in the DDD region and a first type doped regions in the second type well region.

4. 发明授权

US08658495B2 Method of fabricating erasable programmable single-poly nonvolatile memory 有权
标题翻译：制造可擦除可编程单一多晶硅非易失性存储器的方法
公开(公告)号：US08658495B2
公开(公告)日：2014-02-25
申请号：US13602404
申请日：2012-09-04
申请人： Te-Hsun Hsu , Hsin-Ming Chen , Wen-Hao Ching , Wei-Ren Chen
发明人： Te-Hsun Hsu , Hsin-Ming Chen , Wen-Hao Ching , Wei-Ren Chen
IPC分类号： H01L29/788
CPC分类号： H01L21/28 , H01L27/11558 , H01L27/1156 , H01L29/401
摘要： The present invention provides a method of fabricating an erasable programmable single-poly nonvolatile memory, comprising the steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gate oxide layer covering a surface of the first area, wherein the second gate oxide layer extends to and is adjacent to the second area; forming a DDD region in the second area; etching a portion of the second gate oxide layer above the second area; forming two polysilicon gates covering the first and the second gate oxide layers; and defining a second type doped region in the DDD region and defining first type doped regions in the second type well region.
摘要翻译：本发明提供一种制造可擦除可编程单多晶非易失性存储器的方法，包括以下步骤：在第一类型衬底中限定第一区域和第二区域; 在所述第一区域中形成第二类型井区域; 形成覆盖所述第一区域的表面的第一栅极氧化物层和第二栅极氧化物层，其中所述第二栅极氧化物层延伸到所述第二区域并邻近所述第二区域; 在第二区域中形成DDD区域; 在所述第二区域上方蚀刻所述第二栅极氧化物层的一部分; 形成覆盖所述第一和第二栅极氧化物层的两个多晶硅栅极; 以及限定所述DDD区域中的第二类型掺杂区域并限定所述第二类型阱区域中的第一类型掺杂区域。

5. 发明申请

US20130234227A1 ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY 有权
标题翻译：可擦除可编程的单槽非易失性存储器
公开(公告)号：US20130234227A1
公开(公告)日：2013-09-12
申请号：US13415185
申请日：2012-03-08
申请人： Wei-Ren Chen , Te-Hsun Hsu , Shih-Chen Wang , Hsin-Ming Chen , Ching-Sung Yang
发明人： Wei-Ren Chen , Te-Hsun Hsu , Shih-Chen Wang , Hsin-Ming Chen , Ching-Sung Yang
IPC分类号： H01L27/115
CPC分类号： H01L29/42328 , G11C16/0408 , H01L27/11558 , H01L29/7885
摘要： An erasable programmable single-poly nonvolatile memory includes a first PMOS transistor comprising a select gate, a first p-type doped region, and a second p-type doped region, wherein the select gate is connected to a select gate voltage, and the first p-type doped region is connected to a source line voltage; a second PMOS transistor comprising the second p-type doped region, a third p-type doped region, and a floating gate, wherein the third p-type doped region is connected to a bit line voltage; and an erase gate region adjacent to the floating gate, wherein the erase gate region is connected to an erase line voltage.
摘要翻译：可擦除可编程单一多晶硅非易失性存储器包括包括选择栅极，第一p型掺杂区域和第二p型掺杂区域的第一PMOS晶体管，其中选择栅极连接到选择栅极电压，并且第一 p型掺杂区域连接到源极线电压; 包括第二p型掺杂区的第二PMOS晶体管，第三p型掺杂区和浮置栅，其中第三p型掺杂区连接到位线电压; 以及与浮置栅极相邻的擦除栅极区域，其中擦除栅极区域连接到擦除线电压。

6. 发明授权

US08941167B2 Erasable programmable single-ploy nonvolatile memory 有权
标题翻译：可擦除可编程单态非易失性存储器
公开(公告)号：US08941167B2
公开(公告)日：2015-01-27
申请号：US13415185
申请日：2012-03-08
申请人： Wei-Ren Chen , Te-Hsun Hsu , Shih-Chen Wang , Hsin-Ming Chen , Ching-Sung Yang
发明人： Wei-Ren Chen , Te-Hsun Hsu , Shih-Chen Wang , Hsin-Ming Chen , Ching-Sung Yang
IPC分类号： H01L29/788
CPC分类号： H01L29/42328 , G11C16/0408 , H01L27/11558 , H01L29/7885
摘要： An erasable programmable single-poly nonvolatile memory includes a first PMOS transistor comprising a select gate, a first p-type doped region, and a second p-type doped region, wherein the select gate is connected to a select gate voltage, and the first p-type doped region is connected to a source line voltage; a second PMOS transistor comprising the second p-type doped region, a third p-type doped region, and a floating gate, wherein the third p-type doped region is connected to a bit line voltage; and an erase gate region adjacent to the floating gate, wherein the erase gate region is connected to an erase line voltage.
摘要翻译：可擦除可编程单一多晶硅非易失性存储器包括包括选择栅极，第一p型掺杂区域和第二p型掺杂区域的第一PMOS晶体管，其中选择栅极连接到选择栅极电压，并且第一 p型掺杂区域连接到源极线电压; 包括第二p型掺杂区的第二PMOS晶体管，第三p型掺杂区和浮置栅，其中第三p型掺杂区连接到位线电压; 以及与浮置栅极相邻的擦除栅极区域，其中擦除栅极区域连接到擦除线电压。

7. 发明申请

US20120236646A1 NON-VOLATILE MEMORY CELL 有权
标题翻译：非挥发性记忆细胞
公开(公告)号：US20120236646A1
公开(公告)日：2012-09-20
申请号：US13483033
申请日：2012-05-29
申请人： Te-Hsun Hsu , Wei-Ren Chen , Wen-Hao Ching , Wen-Chuan Chang
发明人： Te-Hsun Hsu , Wei-Ren Chen , Wen-Hao Ching , Wen-Chuan Chang
IPC分类号： G11C16/04 , H01L29/788 , G11C16/14 , G11C16/26 , G11C16/12
CPC分类号： G11C16/0441 , G11C16/3418 , G11C2216/10 , H01L27/11519 , H01L27/11524 , H01L29/66825 , H01L29/7881
摘要： The non-volatile memory cell includes a coupling device and a first select transistor. The coupling device is formed in a first conductivity region. The first select transistor is serially connected to a first floating gate transistor and a second select transistor, all formed in a second conductivity region. An electrode of the coupling device and a gate of the first floating gate transistor are a monolithically formed floating gate; wherein the first conductivity region and the second conductivity region are formed in a third conductivity region; wherein the first conductivity region, the second conductivity region, and the third conductivity region are wells.
摘要翻译：非易失性存储单元包括耦合器件和第一选择晶体管。耦合装置形成在第一导电区域中。第一选择晶体管串联连接到第一浮栅晶体管和第二选择晶体管，全部形成在第二导电区域中。耦合器件的电极和第一浮栅晶体管的栅极是单片形成的浮栅; 其中所述第一导电区域和所述第二导电区域形成在第三导电区域中; 其中所述第一导电区域，所述第二导电区域和所述第三导电区域是孔。

8. 发明授权

US08958245B2 Logic-based multiple time programming memory cell compatible with generic CMOS processes 有权
标题翻译：与通用CMOS工艺兼容的基于逻辑的多时间编程存储单元
公开(公告)号：US08958245B2
公开(公告)日：2015-02-17
申请号：US13483033
申请日：2012-05-29
申请人： Te-Hsun Hsu , Wei-Ren Chen , Wen-Hao Ching , Wen-Chuan Chang
发明人： Te-Hsun Hsu , Wei-Ren Chen , Wen-Hao Ching , Wen-Chuan Chang
IPC分类号： G11C16/04 , G11C16/06 , H01L27/115 , H01L29/66 , H01L29/788
CPC分类号： G11C16/0441 , G11C16/3418 , G11C2216/10 , H01L27/11519 , H01L27/11524 , H01L29/66825 , H01L29/7881
摘要： The non-volatile memory cell includes a coupling device and a first select transistor. The coupling device is formed in a first conductivity region. The first select transistor is serially connected to a first floating gate transistor and a second select transistor, all formed in a second conductivity region. An electrode of the coupling device and a gate of the first floating gate transistor are a monolithically formed floating gate; wherein the first conductivity region and the second conductivity region are formed in a third conductivity region; wherein the first conductivity region, the second conductivity region, and the third conductivity region are wells.
摘要翻译：非易失性存储单元包括耦合器件和第一选择晶体管。耦合装置形成在第一导电区域中。第一选择晶体管串联连接到第一浮栅晶体管和第二选择晶体管，全部形成在第二导电区域中。耦合器件的电极和第一浮栅晶体管的栅极是单片形成的浮栅; 其中所述第一导电区域和所述第二导电区域形成在第三导电区域中; 其中所述第一导电区域，所述第二导电区域和所述第三导电区域是孔。

9. 发明申请

US20130242663A1 PROGRAMMING INHIBIT METHOD OF NONVOLATILE MEMORY APPARATUS FOR REDUCING LEAKAGE CURRENT 有权
标题翻译：用于减少泄漏电流的非易失性存储器件的编程禁止方法
公开(公告)号：US20130242663A1
公开(公告)日：2013-09-19
申请号：US13418352
申请日：2012-03-13
申请人： Wei-Ren Chen , Te-Hsun Hsu , Hsin-Ming Chen
发明人： Wei-Ren Chen , Te-Hsun Hsu , Hsin-Ming Chen
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0433
摘要： The invention provides a nonvolatile memory apparatus. The nonvolatile memory apparatus comprises a plurality of memory cells and a signal generator. The memory cells are arranged in an array, and each of the memory cells has a control gate terminal, a floating gate, a source line terminal, a bit-line terminal, a selected gate terminal and a word-line terminal. The signal generator is coupled to the memory cells. When the nonvolatile memory apparatus executes a programming operation, the signal generator provides a programming signal to the control gate terminals of a plurality of inhibited memory cells among the memory cells. Wherein, the programming signal is a pulse signal with a direct-current (DC) offset voltage.
摘要翻译：本发明提供一种非易失性存储装置。非易失性存储装置包括多个存储单元和信号发生器。存储单元被布置成阵列，并且每个存储单元具有控制栅极端子，浮动栅极，源极线端子，位线端子，所选择的栅极端子和字线端子。信号发生器耦合到存储单元。当非易失性存储器件执行编程操作时，信号发生器向存储器单元中的多个禁止的存储单元的控制栅极端提供编程信号。其中编程信号是具有直流（DC）偏移电压的脉冲信号。

10. 发明授权

US08787092B2 Programming inhibit method of nonvolatile memory apparatus for reducing leakage current 有权
标题翻译：用于减少漏电流的非易失性存储装置的编程禁止方法
公开(公告)号：US08787092B2
公开(公告)日：2014-07-22
申请号：US13418352
申请日：2012-03-13
申请人： Wei-Ren Chen , Te-Hsun Hsu , Hsin-Ming Chen
发明人： Wei-Ren Chen , Te-Hsun Hsu , Hsin-Ming Chen
IPC分类号： G11C16/04 , G11C16/10
CPC分类号： G11C16/10 , G11C16/0433
摘要： The invention provides a nonvolatile memory apparatus. The nonvolatile memory apparatus comprises a plurality of memory cells and a signal generator. The memory cells are arranged in an array, and each of the memory cells has a control gate terminal, a floating gate, a source line terminal, a bit-line terminal, a selected gate terminal and a word-line terminal. The signal generator is coupled to the memory cells. When the nonvolatile memory apparatus executes a programming operation, the signal generator provides a programming signal to the control gate terminals of a plurality of inhibited memory cells among the memory cells. Wherein, the programming signal is a pulse signal with a direct-current (DC) offset voltage.
摘要翻译：本发明提供一种非易失性存储装置。非易失性存储装置包括多个存储单元和信号发生器。存储单元被布置成阵列，并且每个存储单元具有控制栅极端子，浮动栅极，源极线端子，位线端子，所选择的栅极端子和字线端子。信号发生器耦合到存储单元。当非易失性存储器件执行编程操作时，信号发生器向存储器单元中的多个禁止的存储单元的控制栅极端提供编程信号。其中编程信号是具有直流（DC）偏移电压的脉冲信号。

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