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1. 发明申请

US20090127500A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090127500A1
公开(公告)日：2009-05-21
申请号：US12065423
申请日：2006-09-01
申请人： Tatsuhiko Hirano , Hiroshi Asano , Katsunobu Hori
发明人： Tatsuhiko Hirano , Hiroshi Asano , Katsunobu Hori
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.
摘要翻译：抛光组合物含有具有6元环骨架的三唑，水溶性聚合物，氧化剂和磨料颗粒。三唑在6元环骨架中具有疏水官能团。研磨用组合物中的三唑的含量为3g / L以下。抛光组合物的pH为7以上。抛光组合物适合用于形成半导体器件的布线的抛光。

2. 发明申请

US20050215060A1 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20050215060A1
公开(公告)日：2005-09-29
申请号：US11085612
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/304 , H01L21/321 , H01L21/4763 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
摘要翻译：抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。其中优素兰是优选的。研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。抛光组合物可以适用于用于形成半导体器件布线的抛光。

3. 发明申请

US20060060974A1 Polishing composition and process for producing wiring structure using it 审中-公开
标题翻译：抛光组合物及其制造方法
公开(公告)号：US20060060974A1
公开(公告)日：2006-03-23
申请号：US11213999
申请日：2005-08-30
申请人： Tatsuhiko Hirano , Junhui Oh , Akifumi Sakao , Atsunori Kawamura , Katsunobu Hori
发明人： Tatsuhiko Hirano , Junhui Oh , Akifumi Sakao , Atsunori Kawamura , Katsunobu Hori
IPC分类号： H01L23/48
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.
摘要翻译：一种抛光组合物，其包含以下组分（a）至（e）：（a）二氧化硅，（b）碱性化合物，（c）防腐剂，（d）水溶性高分子化合物和（e）水。

4. 发明授权

US07550388B2 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US07550388B2
公开(公告)日：2009-06-23
申请号：US11085612
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
摘要翻译：抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。其中优素兰是优选的。研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。抛光组合物可以适用于用于形成半导体器件布线的抛光。

5. 发明申请

US20060134908A1 Polishing method 审中-公开
标题翻译：抛光方法
公开(公告)号：US20060134908A1
公开(公告)日：2006-06-22
申请号：US11266967
申请日：2005-11-04
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Katsunobu Hori , Kenji Sakai
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Katsunobu Hori , Kenji Sakai
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/3212
摘要： A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent. Thus, the wiring of the semiconductor device is reliably formed.
摘要翻译：用于研磨物体以形成用于半导体器件的布线的方法包括：通过化学和机械抛光去除导体层的外部的一部分以暴露阻挡层的上表面; 以及通过化学和机械抛光去除导体层的外部部分的剩余部分和阻挡层的外部部分，以露出绝缘体层的上表面。当去除导体层的外部的一部分时，使用包含成膜剂的第一抛光组合物对物体的上表面进行化学和机械抛光。随后，洗涤物体的上表面以通过第一抛光组合物中的成膜剂除去在导体层的上表面上形成的保护膜。此后，使用含有成膜剂的第二抛光组合物再次对物体的上表面进行化学和机械抛光。因此，可靠地形成半导体器件的布线。

6. 发明申请

US20050208761A1 Polishing composition and polishing method 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20050208761A1
公开(公告)日：2005-09-22
申请号：US11085835
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , C23F3/06 , H01L21/00 , H01L21/304 , H01L21/321 , H01L21/4763
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.
摘要翻译：抛光组合物含有表面不规则抑制剂，二氧化硅，酸，氧化剂和水。表面不规则抑制剂是选自例如储存的多糖和细胞外多糖中的至少一种。二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。酸是选自例如硝酸，盐酸，硫酸，乳酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸中的至少一种。氧化剂是例如过氧化氢，过硫酸盐，高碘酸盐，高氯酸盐，硝酸盐或氧化性金属盐。抛光组合物可以适用于在半导体器件中形成布线的抛光。

7. 发明申请

US20140014872A1 POLISHING COMPOSITION AND POLISHING METHOD 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20140014872A1
公开(公告)日：2014-01-16
申请号：US14007749
申请日：2012-03-28
申请人： Shuichi Tamada , Tatsuhiko Hirano , Yoshihihro Ezawa , Shogo Onishi
发明人： Shuichi Tamada , Tatsuhiko Hirano , Yoshihihro Ezawa , Shogo Onishi
IPC分类号： C23F3/06
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Disclosed is a polishing composition containing a pH-lowering substance and a pH-buffering agent. The difference in absolute value between the pH of the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 g of the polishing composition and the pH of the polishing composition after leaving to stand for eight days therefrom is 0.5 or less. Also disclosed is another polishing composition containing a pH-lowering substance and a pH-controlling agent. In comparison to the amount of a basic substance in the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 ml of the polishing composition, the amount of a basic substance in the polishing composition after leaving to stand for eight days therefrom is increased by no less than 0.1 mM.
摘要翻译：公开了含有pH降低物质和pH缓冲剂的抛光组合物。添加31重量％过氧化氢溶液之后的抛光组合物的pH与每100g抛光组合物相比5.16g和抛光组合物在静置8天后的pH之间的绝对值的差异是 0.5以下。还公开了另一种含有pH降低物质和pH控制剂的抛光组合物。相对于每100毫升抛光组合物以5.16克加入31重量％过氧化氢溶液后的抛光组合物中的碱性物质的量相对于抛光组合物中的碱性物质的量八天后，不少于0.1mM。

8. 发明授权

US07485162B2 Polishing composition 有权
标题翻译：抛光组成
公开(公告)号：US07485162B2
公开(公告)日：2009-02-03
申请号：US10952672
申请日：2004-09-29
申请人： Tsuyoshi Matsuda , Tatsuhiko Hirano , Junhui Oh , Atsunori Kawamura , Kenji Sakai
发明人： Tsuyoshi Matsuda , Tatsuhiko Hirano , Junhui Oh , Atsunori Kawamura , Kenji Sakai
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.
摘要翻译：本发明的抛光组合物，用于在半导体器件中形成布线的抛光中，包括：特定的表面活性剂; 氧化硅; 选自羧酸和α-氨基酸的至少一种; 腐蚀抑制剂; 氧化剂和水。该抛光组合物能够抑制凹陷的发生。

9. 发明申请

US20130203254A1 POLISHING COMPOSITION AND POLISHING METHOD 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20130203254A1
公开(公告)日：2013-08-08
申请号：US13814644
申请日：2011-08-02
申请人： Shuichi Tamada , Tatsuhiko Hirano , Takahiro Umeda , Kazuya Sumita , Yoshihiro Izawa
发明人： Shuichi Tamada , Tatsuhiko Hirano , Takahiro Umeda , Kazuya Sumita , Yoshihiro Izawa
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g·solid or greater.
摘要翻译：抛光组合物含有水溶性聚合物，抛光促进剂和氧化剂。水溶性聚合物是胺值为150mg KOH / 1g·固体以上的聚酰胺 - 聚胺聚合物。

10. 发明授权

US08864860B2 Polishing composition 有权
标题翻译：抛光组成
公开(公告)号：US08864860B2
公开(公告)日：2014-10-21
申请号：US12341241
申请日：2008-12-22
申请人： Tatsuhiko Hirano , Hiroshi Mizuno , Yasuyuki Yamato , Akihito Yasui
发明人： Tatsuhiko Hirano , Hiroshi Mizuno , Yasuyuki Yamato , Akihito Yasui
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09G1/02 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.
摘要翻译：为了提供一种在制造布线结构的抛光步骤中能够同时满足表面形貌的抑制和高的剥离率的抛光组合物。一种抛光组合物，其包含磨粒，加工促进剂，由R-POE（I）表示的非离子表面活性剂（其中R为具有支链结构的C10-16烷基，POE为聚氧乙烯链），HLB为 7〜12，阴离子表面活性剂，保护膜形成剂，氧化剂和水。

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