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1. 发明申请

US20090127500A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090127500A1
公开(公告)日：2009-05-21
申请号：US12065423
申请日：2006-09-01
申请人： Tatsuhiko Hirano , Hiroshi Asano , Katsunobu Hori
发明人： Tatsuhiko Hirano , Hiroshi Asano , Katsunobu Hori
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.
摘要翻译：抛光组合物含有具有6元环骨架的三唑，水溶性聚合物，氧化剂和磨料颗粒。三唑在6元环骨架中具有疏水官能团。研磨用组合物中的三唑的含量为3g / L以下。抛光组合物的pH为7以上。抛光组合物适合用于形成半导体器件的布线的抛光。

2. 发明授权

US06822334B2 Semiconductor device having a layered wiring structure with hard mask covering 失效
标题翻译：具有具有硬掩模覆盖层的层状布线结构的半导体器件
公开(公告)号：US06822334B2
公开(公告)日：2004-11-23
申请号：US09756846
申请日：2001-01-10
申请人： Katsunobu Hori , Nobuo Fujiwara , Takashi Watadani , Makoto Nagano
发明人： Katsunobu Hori , Nobuo Fujiwara , Takashi Watadani , Makoto Nagano
IPC分类号： H01L2348
CPC分类号： H01L21/32139 , H01L21/32136 , H01L21/76885
摘要： A hard mask material 2 such as a silicon oxide film is formed on an aluminum alloy film 3. The hard mask material 2 is patterned in the form of a thick film wiring 6, followed by etching the aluminum alloy film 3 to a given depth through the mask. A resist 5 applied to the thin film portion of the aluminum alloy film 3 is patterned in the form of a thin film wiring 7. Etching through the resist 5 and the hard mask material 2 as a mask is effected to form the thick film wiring 6 and the thin film wiring 7 in the same layer.
摘要翻译：在铝合金膜3上形成诸如氧化硅膜的硬掩模材料2.将硬掩模材料2以厚膜布线6的形式图案化，然后将铝合金膜3蚀刻到给定深度通过面具。施加到铝合金膜3的薄膜部分的抗蚀剂5被图案化为薄膜布线7的形式。通过作为掩模的抗蚀剂5和硬掩模材料2进行蚀刻以形成厚膜布线6 和薄膜布线7在同一层中。

3. 发明授权

US07550388B2 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US07550388B2
公开(公告)日：2009-06-23
申请号：US11085612
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
摘要翻译：抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。其中优素兰是优选的。研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。抛光组合物可以适用于用于形成半导体器件布线的抛光。

4. 发明申请

US20060134908A1 Polishing method 审中-公开
标题翻译：抛光方法
公开(公告)号：US20060134908A1
公开(公告)日：2006-06-22
申请号：US11266967
申请日：2005-11-04
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Katsunobu Hori , Kenji Sakai
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Katsunobu Hori , Kenji Sakai
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/3212
摘要： A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent. Thus, the wiring of the semiconductor device is reliably formed.
摘要翻译：用于研磨物体以形成用于半导体器件的布线的方法包括：通过化学和机械抛光去除导体层的外部的一部分以暴露阻挡层的上表面; 以及通过化学和机械抛光去除导体层的外部部分的剩余部分和阻挡层的外部部分，以露出绝缘体层的上表面。当去除导体层的外部的一部分时，使用包含成膜剂的第一抛光组合物对物体的上表面进行化学和机械抛光。随后，洗涤物体的上表面以通过第一抛光组合物中的成膜剂除去在导体层的上表面上形成的保护膜。此后，使用含有成膜剂的第二抛光组合物再次对物体的上表面进行化学和机械抛光。因此，可靠地形成半导体器件的布线。

5. 发明申请

US20050208761A1 Polishing composition and polishing method 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20050208761A1
公开(公告)日：2005-09-22
申请号：US11085835
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , C23F3/06 , H01L21/00 , H01L21/304 , H01L21/321 , H01L21/4763
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.
摘要翻译：抛光组合物含有表面不规则抑制剂，二氧化硅，酸，氧化剂和水。表面不规则抑制剂是选自例如储存的多糖和细胞外多糖中的至少一种。二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。酸是选自例如硝酸，盐酸，硫酸，乳酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸中的至少一种。氧化剂是例如过氧化氢，过硫酸盐，高碘酸盐，高氯酸盐，硝酸盐或氧化性金属盐。抛光组合物可以适用于在半导体器件中形成布线的抛光。

6. 发明申请

US20080265205A1 Polishing Composition 审中-公开
标题翻译：抛光组合
公开(公告)号：US20080265205A1
公开(公告)日：2008-10-30
申请号：US12065419
申请日：2006-09-01
申请人： Junhui Oh , Hiroshi Asano , Katsunobu Hori
发明人： Junhui Oh , Hiroshi Asano , Katsunobu Hori
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO3H2 where R represents an alkyl group or an alkylphenyl group, R′ represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.
摘要翻译：抛光组合物含有保护膜形成剂，氧化剂和蚀刻剂。保护膜形成剂包括选自苯并三唑和苯并三唑衍生物中的至少一种化合物和选自由通式ROR'COOH表示的化合物和通式ROR'OPO 3的至少一种化合物，其中R表示烷基或烷基苯基，R'表示聚氧乙烯基，聚氧丙烯基或聚（氧乙烯/氧丙烯）基。抛光组合物的pH为8以上。抛光组合物适合用于形成半导体器件的布线的抛光。

7. 发明申请

US20050215060A1 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20050215060A1
公开(公告)日：2005-09-29
申请号：US11085612
申请日：2005-03-21
申请人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
发明人： Junhui Oh , Atsunori Kawamura , Tsuyoshi Matsuda , Tatsuhiko Hirano , Kenji Sakai , Katsunobu Hori
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/304 , H01L21/321 , H01L21/4763 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
摘要翻译：抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。其中优素兰是优选的。研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。抛光组合物可以适用于用于形成半导体器件布线的抛光。

8. 发明申请

US20060060974A1 Polishing composition and process for producing wiring structure using it 审中-公开
标题翻译：抛光组合物及其制造方法
公开(公告)号：US20060060974A1
公开(公告)日：2006-03-23
申请号：US11213999
申请日：2005-08-30
申请人： Tatsuhiko Hirano , Junhui Oh , Akifumi Sakao , Atsunori Kawamura , Katsunobu Hori
发明人： Tatsuhiko Hirano , Junhui Oh , Akifumi Sakao , Atsunori Kawamura , Katsunobu Hori
IPC分类号： H01L23/48
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.
摘要翻译：一种抛光组合物，其包含以下组分（a）至（e）：（a）二氧化硅，（b）碱性化合物，（c）防腐剂，（d）水溶性高分子化合物和（e）水。

9. 发明授权

US06603163B2 Semiconductor device with capacitor and method of manufacturing thereof 有权
公开(公告)号：US06603163B2
公开(公告)日：2003-08-05
申请号：US09858455
申请日：2001-05-17
申请人： Katsunobu Hori , Takeshi Matsunuma , Kenichiro Shiozawa , Moriaki Akazawa
发明人： Katsunobu Hori , Takeshi Matsunuma , Kenichiro Shiozawa , Moriaki Akazawa
IPC分类号： H01L27108
CPC分类号： H01L28/55 , H01L21/76838 , H01L27/0805 , H01L28/60
摘要： A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.

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