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1. 发明申请

US20120329969A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20120329969A1
公开(公告)日：2012-12-27
申请号：US13539558
申请日：2012-07-02
申请人： Tasuku MATSUMIYA , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku MATSUMIYA , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： C08F228/06
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

2. 发明申请

US20100183981A1 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20100183981A1
公开(公告)日：2010-07-22
申请号：US12591819
申请日：2009-12-02
申请人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

3. 发明授权

US08487056B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08487056B2
公开(公告)日：2013-07-16
申请号：US13539558
申请日：2012-07-02
申请人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： C08F28/06
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

4. 发明授权

US08236477B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08236477B2
公开(公告)日：2012-08-07
申请号：US12591819
申请日：2009-12-02
申请人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

5. 发明授权

US08206891B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08206891B2
公开(公告)日：2012-06-26
申请号：US12573686
申请日：2009-10-05
申请人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Takahiro Dazai , Tomoyuki Hirano , Fumitake Kaneko , Kotaro Endo
发明人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Takahiro Dazai , Tomoyuki Hirano , Fumitake Kaneko , Kotaro Endo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/123
摘要： A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).
摘要翻译：一种正型抗蚀剂组合物，其包含：包含含有由通式（a0-1）表示的结构单元（a0）的聚合化合物（A1）和由具有由通式（a0-1）表示的结构单元（a0））的结构单元（a1）的基础组分（A）酸解离，溶解抑制组; 和含有由通式（I）表示的阴离子部分的酸发生剂（B1）的酸产生剂成分（B）：（式（a0-1）中，R 1表示氢原子，低级烷基 1〜5个碳原子的卤代低级烷基或1〜5个碳原子的卤代低级烷基; R2表示二价连接基团; R3表示环状骨架中含有-SO2-的环状基团，式（I）中，X表示 3〜30个碳原子的环状基团，Q1表示含有氧原子的二价连接基团，Y1表示碳原子数1〜4的亚烷基或碳原子数1〜4的氟化亚烷基。

6. 发明申请

US20100086873A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100086873A1
公开(公告)日：2010-04-08
申请号：US12573686
申请日：2009-10-05
申请人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Takahiro Dazai , Tomoyuki Hirano , Fumitake Kaneko , Kotaro Endo
发明人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Takahiro Dazai , Tomoyuki Hirano , Fumitake Kaneko , Kotaro Endo
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/123
摘要： A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).
摘要翻译：一种正型抗蚀剂组合物，其包含：包含含有由通式（a0-1）表示的结构单元（a0）的聚合化合物（A1）和由具有由通式（a0-1）表示的结构单元（a0））的结构单元（a1）的基础组分（A）酸解离，溶解抑制组; 和含有由通式（I）表示的阴离子部分的酸发生剂（B1）的酸产生剂成分（B）：（式（a0-1）中，R 1表示氢原子，低级烷基 1〜5个碳原子的卤代低级烷基或1〜5个碳原子的卤代低级烷基; R2表示二价连接基团; R3表示环状骨架中含有-SO2-的环状基团，式（I）中，X表示 3〜30个碳原子的环状基团，Q1表示含有氧原子的二价连接基团，Y1表示碳原子数1〜4的亚烷基或碳原子数1〜4的氟化亚烷基。

7. 发明申请

US20090280431A1 MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME 审中-公开
标题翻译：用于保护膜形成的材料，以及使用其形成光电子图案的方法
公开(公告)号：US20090280431A1
公开(公告)日：2009-11-12
申请号：US12066127
申请日：2006-09-08
申请人： Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
发明人： Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/2041
摘要： To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
摘要翻译：为了提供可以同时防止浸液曝光期间抗蚀剂膜的质量变化和用于液浸曝光的液体的质量变化的保护膜形成材料，并且同时可以形成抗蚀剂图案具有良好的形状而不增加治疗步骤的数量。一种用于保护膜形成的材料，至少包含含有由通式（1）表示的结构单元的碱溶性聚合物：其中R1表示氢原子或甲基; R2表示碳原子数为1〜5的亚烷基链; R3表示其中一部分或全部氢原子被氟原子取代的碳原子数1〜10的氟化亚烷基链; m是重复单元。

8. 发明申请

US20090197199A1 MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME 有权
标题翻译：用于形成耐腐蚀膜的材料和使用其形成耐蚀图案的方法
公开(公告)号：US20090197199A1
公开(公告)日：2009-08-06
申请号：US11659006
申请日：2005-07-29
申请人： Keita Ishizuka , Kotaro Endo , Tomoyuki Hirano
发明人： Keita Ishizuka , Kotaro Endo , Tomoyuki Hirano
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/128
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。

9. 发明申请

US20090048409A1 ACRYLIC COPOLYMER 审中-公开
标题翻译：丙烯酸共聚物
公开(公告)号：US20090048409A1
公开(公告)日：2009-02-19
申请号：US11913844
申请日：2005-12-22
申请人： Kotaro Endo , Keita Ishiduka , Tomoyuki Hirano , Ichiro Taninaka , Takahiko Tsukuda
发明人： Kotaro Endo , Keita Ishiduka , Tomoyuki Hirano , Ichiro Taninaka , Takahiko Tsukuda
IPC分类号： C08F20/10 , C08F20/22
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041
摘要： It is intended to in a liquid-immersion exposure process, simultaneously prevent any degeneration, represented by bridge, etc., of resist film during the liquid-immersion exposure using water and other various liquid-immersion exposure liquids and any degeneration of liquid-immersion exposure liquids per se, and to without increasing of the number of treatment steps, realize enhancing of the post-exposure storage stability of resist film, and to enable forming of a resist pattern of high resolution through liquid-immersion exposure. Use is made of an acrylic copolymer of the general formula: wherein R is a hydrogen atom or methyl; R′ is a hydrogen atom, methyl or C1-C4 hydroxyalkyl; R1 is a C1-C15 linear, branched or cyclic alkyl with the proviso that the hydrogen atoms of the alkyl may be partially or wholly substituted with fluorine atom or atoms; R2 is an alicyclic hydrocarbon group; R3 is a linear hydrocarbon group; and each of l, m, n and o is the mol % of structural unit contained, being in the range of 2 to 60 mol %.
摘要翻译：旨在在浸液曝光工艺中，同时防止在使用水和其他各种液浸曝光液体的浸液曝光期间抗蚀剂膜的桥等引起的任何退化，以及液浸的任何退化曝光液体本身，并且在不增加处理步骤的数量的情况下，实现抗蚀剂膜的曝光后储存稳定性的提高，并且能够通过液浸曝光形成高分辨率的抗蚀剂图案。使用由以下通式的丙烯酸共聚物制备：其中R是氢原子或甲基; R'是氢原子，甲基或C 1 -C 4羟基烷基; R1是C1-C15直链，支链或环状烷基，条件是烷基的氢原子可以部分或全部被氟原子或原子取代; R2是脂环族烃基; R3是直链烃基; l，m，n和o各自为所含结构单元的摩尔％，为2〜60摩尔％。

10. 发明授权

US09494860B2 Resist composition, method of forming resist pattern 有权
标题翻译：抗蚀剂组成，形成抗蚀剂图案的方法
公开(公告)号：US09494860B2
公开(公告)日：2016-11-15
申请号：US13329001
申请日：2011-12-16
申请人： Tsuyoshi Kurosawa , Kotaro Endo , Yuichi Suzuki , Yuta Iwasawa
发明人： Tsuyoshi Kurosawa , Kotaro Endo , Yuichi Suzuki , Yuta Iwasawa
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y0 represents an alkylene group of 1 to 4 carbon atoms which may have a substituent, R0 represents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (═O), p represents 0 or 1, and Z+ represents an organic cation.

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