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    • 2. 发明申请
    • ACRYLIC COPOLYMER
    • 丙烯酸共聚物
    • US20090048409A1
    • 2009-02-19
    • US11913844
    • 2005-12-22
    • Kotaro EndoKeita IshidukaTomoyuki HiranoIchiro TaninakaTakahiko Tsukuda
    • Kotaro EndoKeita IshidukaTomoyuki HiranoIchiro TaninakaTakahiko Tsukuda
    • C08F20/10C08F20/22
    • G03F7/11C08F220/06C08F220/18G03F7/2041
    • It is intended to in a liquid-immersion exposure process, simultaneously prevent any degeneration, represented by bridge, etc., of resist film during the liquid-immersion exposure using water and other various liquid-immersion exposure liquids and any degeneration of liquid-immersion exposure liquids per se, and to without increasing of the number of treatment steps, realize enhancing of the post-exposure storage stability of resist film, and to enable forming of a resist pattern of high resolution through liquid-immersion exposure. Use is made of an acrylic copolymer of the general formula: wherein R is a hydrogen atom or methyl; R′ is a hydrogen atom, methyl or C1-C4 hydroxyalkyl; R1 is a C1-C15 linear, branched or cyclic alkyl with the proviso that the hydrogen atoms of the alkyl may be partially or wholly substituted with fluorine atom or atoms; R2 is an alicyclic hydrocarbon group; R3 is a linear hydrocarbon group; and each of l, m, n and o is the mol % of structural unit contained, being in the range of 2 to 60 mol %.
    • 旨在在浸液曝光工艺中,同时防止在使用水和其他各种液浸曝光液体的浸液曝光期间抗蚀剂膜的桥等引起的任何退化,以及液浸的任何退化 曝光液体本身,并且在不增加处理步骤的数量的情况下,实现抗蚀剂膜的曝光后储存稳定性的提高,并且能够通过液浸曝光形成高分辨率的抗蚀剂图案。 使用由以下通式的丙烯酸共聚物制备:其中R是氢原子或甲基; R'是氢原子,甲基或C 1 -C 4羟基烷基; R1是C1-C15直链,支链或环状烷基,条件是烷基的氢原子可以部分或全部被氟原子或原子取代; R2是脂环族烃基; R3是直链烃基; l,m,n和o各自为所含结构单元的摩尔%,为2〜60摩尔%。
    • 7. 发明申请
    • Positive-type resist composition for liquid immersion lithography and method for forming resist pattern
    • 用于液浸光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
    • US20070190448A1
    • 2007-08-16
    • US10591718
    • 2005-03-07
    • Keita IshidukaKotaro Endo
    • Keita IshidukaKotaro Endo
    • G03C1/00
    • G03F7/0046C08F220/18C08F220/28G03F7/0397G03F7/2041
    • The present invention relates to a positive-type resist composition for liquid immersion lithography and a method of forming a resist pattern, in particular, a positive-type resist composition for liquid immersion lithography that exhibits superior liquid immersion resistance to water; and a method for forming a resist pattern by thereof. The positive-type resist composition for liquid immersion lithography according to the present invention includes a resin component (A) increasing alkali-solubility by acid action; and an acid generator generating acid by exposure; in which, the resin component (A) contains at least one acrylic ester constitutional unit (a1), and one (meth)acrylic ester constitutional unit (a2) having acid dissociable, dissolution inhibiting group, and the constitutional unit (a1) consists of a cyclic group bonded to the acrylic ester of the constitutional unit (a1), and a fluoro organic group bonded to the cyclic group.
    • 本发明涉及一种用于液浸光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法,特别涉及一种耐水浸性优良的用于液浸光刻的正型抗蚀剂组合物, 以及通过其形成抗蚀剂图案的方法。 根据本发明的液浸光刻用正型抗蚀剂组合物包括通过酸作用提高碱溶性的树脂组分(A) 和通过暴露产生酸的酸发生剂; 其中,树脂成分(A)含有至少一种丙烯酸酯结构单元(a1)和具有酸解离性,溶解抑制基团的一个(甲基)丙烯酸酯结构单元(a2),结构单元(a1)由 与结构单元(a1)的丙烯酸酯键合的环状基团和与该环状基团键合的氟有机基团。
    • 10. 发明授权
    • Material for forming resist protection films and method for resist pattern formation with the same
    • 用于形成抗蚀剂保护膜的材料及其抗蚀剂图案形成方法
    • US08278025B2
    • 2012-10-02
    • US11722797
    • 2005-12-22
    • Keita IshidukaKotaro Endo
    • Keita IshidukaKotaro Endo
    • G03F7/004G03F7/30
    • G03F7/11C08F220/18C08F220/24G03F7/0046G03F7/2041
    • The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.
    • 通过在各种流体中通过液浸光刻形成高分辨率抗蚀剂图案可以通过在液体(例如水)浸没暴露期间保护抗蚀剂膜免于劣化(例如桥接),并且使流体变质并提高稳定性 的抗蚀剂膜在曝光后的储存中,而不增加处理步骤的数量。 一种用于形成抗蚀剂保护膜的材料,其包含用于形成抗蚀剂膜的保护性外涂层的碱溶性聚合物,其特征在于,聚合物与水的接触角为90°或更高。 聚合物优选为丙烯酸类聚合物,其包含作为主要组分的构成单元,其衍生自(甲基)丙烯酸和由特定丙烯酸酯衍生的构成单元。