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1. 发明专利

JP2010138011A Method of producing aluminum nitride powder 审中-公开
标题翻译：生产氮化铝粉的方法
公开(公告)号：JP2010138011A
公开(公告)日：2010-06-24
申请号：JP2008314418
申请日：2008-12-10
申请人： Tama Tlo Ltd , Yanagawa Seiki Co Ltd , タマティーエルオー株式会社 , 柳河精機株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI , ITO MICHIHIRO
IPC分类号： C01B21/072
摘要： PROBLEM TO BE SOLVED: To provide a method of producing an aluminum nitride powder which gives a uniform aluminum nitride at low cost.
SOLUTION: The aluminum nitride powder is produced by reacting a mixture of a powder 22, containing a catalyst element having a smaller free energy for generating a nitride than that of aluminum, and an aluminum powder 21 under nitrogen atmosphere at not lower than the melting point of the aluminum powder and not higher than 1,400°C. The catalyst element is at least one selected from among boron, calcium, silicon, patassium, iron, molybdenum, chromium, vanadium, magnesium, manganese, indium, gallium, tantalum, hafnium and thorium.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供以低成本得到均匀的氮化铝的氮化铝粉末的制造方法。解决方案：氮化铝粉末通过使含有具有较小自由能的催化剂元素的粉末22与氮的氮化物的混合物与铝粉21在氮气氛下不低于铝粉的熔点不高于1400℃。催化剂元素是选自硼，钙，硅，钾，铁，钼，铬，钒，镁，锰，铟，镓，钽，铪和钍中的至少一种。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008266680A Method for producing aluminum nitride-containing material 审中-公开
标题翻译：用于生产含氮化镓材料的方法
公开(公告)号：JP2008266680A
公开(公告)日：2008-11-06
申请号：JP2007108180
申请日：2007-04-17
申请人： Tama Tlo Kk , Yanagawa Seiki Co Ltd , タマティーエルオー株式会社 , 柳河精機株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI , KUDO SATOSHI , ITO MICHIHIRO
IPC分类号： C22C1/10 , B22D17/00 , C01B21/072 , C22C1/02 , C22C21/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a formed aluminum nitride-containing material, the method having low production cost.
SOLUTION: The method for producing the formed aluminum nitride-containing material comprises: a first heat-treatment process in which a catalyst element having a free energy of nitride formation lower than that of the aluminum is positioned in molten aluminum heated under nitrogen atmosphere, then, the nitriding reaction of the aluminum is generated by using the catalyst element as the catalyst and the lump of aluminum nitride-containing material 6 containing the aluminum nitride and the aluminum is produced; and a working process in which the aluminum nitride-containing material 6 is heated and formed with a die.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种制备形成的含氮化铝的材料的方法，该方法制造成本低。解决方案：用于生产形成的含氮化铝的材料的方法包括：第一热处理工艺，其中具有低于铝的氮化物形成的自由能的催化剂元素位于在氮气下加热的熔融铝中气氛中，通过使用催化剂元素作为催化剂而产生铝的氮化反应，并且生成包含氮化铝和铝的含氮化铝的材料6的块; 以及其中使用模具加热和形成含氮化铝的材料6的工作过程。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2011020888A Method for producing aluminum nitride-containing material 有权
标题翻译：用于生产含氮化镓材料的方法
公开(公告)号：JP2011020888A
公开(公告)日：2011-02-03
申请号：JP2009166866
申请日：2009-07-15
申请人： Tama Tlo Ltd , タマティーエルオー株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI
IPC分类号： C01B21/072 , C22C1/10 , C23C8/10
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive method for producing an aluminum nitride-containing material. SOLUTION: The method comprises: a gas supply step of supplying nitrogen gas to molten aluminum 20; a powder introduction step of introducing aluminum powder 21 having a natural oxide film on the surface thereof into the molten aluminum 20 located in a nitrogen atmosphere; and a solidification step of solidifying the aluminum 20, where in the powder introduction step, the aluminum powder 21 is preferably introduced at a rate of 0.01-5 wt.%/min relative to the amount of the aluminum 20. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生产含氮化铝的材料的廉价方法。解决方案：该方法包括：向熔融铝20供给氮气的气体供给步骤; 将其表面上具有天然氧化膜的铝粉21引入位于氮气气氛中的熔融铝20中的粉末引入步骤; 以及固化铝20的固化步骤，其中在粉末引入步骤中，铝粉21优选以相对于铝20的量0.01-5重量％/分钟的速率引入。版权：（C）2011，JPO＆INPIT

4. 发明专利

JP2010083697A Method for producing aluminum nitride-containing material 有权
标题翻译：用于生产含氮化镓材料的方法
公开(公告)号：JP2010083697A
公开(公告)日：2010-04-15
申请号：JP2008253271
申请日：2008-09-30
申请人： Tama Tlo Ltd , タマティーエルオー株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI
IPC分类号： C01B21/072
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing material, by which the aluminum nitride-containing material can be produced without using any catalytic element. SOLUTION: Aluminum 20 and a reaction promoter 21 having an aluminum oxide layer (excluding a naturally oxidized layer of aluminum) on at least the surface thereof are heated to the melting point of the aluminum 20 or above in a nitrogen atmosphere to produce the objective aluminum nitride-containing material. The reaction promoter is aluminum oxide, preferably α-alumina. The heating temperature is, e.g. ≤1,400°C. The pressure of the nitrogen atmosphere is, e.g., ordinary pressure. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于制造含氮化铝的材料的方法，通过该方法可以不使用任何催化元素来生产含氮化铝的材料。解决方案：至少在其表面上具有铝氧化物层（不包括铝的自然氧化层）的铝20和反应促进剂21在氮气气氛中被加热到铝20以上的熔点以产生客观的含氮化铝材料。反应促进剂是氧化铝，优选α-氧化铝。加热温度如 ≤1,400℃。氮气氛的压力例如是常压。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009235498A Process for producing of massive mixture of aluminum nitride and aluminum 有权
标题翻译：生产氮化铝和铝的大量混合物的方法
公开(公告)号：JP2009235498A
公开(公告)日：2009-10-15
申请号：JP2008083732
申请日：2008-03-27
申请人： Tama Tlo Ltd , タマティーエルオー株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI , MIZUNO AI
IPC分类号： C23C8/24
CPC分类号： B21J5/00 , B21J5/004 , B22D17/007 , B22D18/02 , B22F1/02 , B22F3/17 , B22F3/225 , B22F2998/10 , B22F2999/00 , C22C1/056 , C22C1/1078 , C22C32/0068 , B22F1/0003 , C22C1/1036 , B22F2201/02
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a mixture of aluminum nitride and aluminum at low production cost. SOLUTION: The process for producing the mixture of aluminum nitride and aluminum involves a first heat-treating step of heating an aluminum powder 21 and an aluminum piece 20 which have been charged in a vessel 13 to a temperature equal to or higher than the melting point of aluminum in a nitrogen atmosphere to thereby produce a massive mixture of aluminum nitride and aluminum. The aluminum powder 21 has an oxide film formed on the surface thereof. The oxide film may be a natural oxide film. The ratio of the amount of the aluminum powder 21 to the amount of the aluminum piece 20 may be, for example, 0.1 or less by weight. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供以低生产成本生产氮化铝和铝的混合物的方法。解决方案：制造氮化铝和铝的混合物的方法包括将已经装入容器13中的铝粉末21和铝片20加热至等于或高于其的温度的第一热处理步骤在氮气气氛中的铝的熔点，从而产生氮化铝和铝的大量混合物。铝粉21的表面形成有氧化膜。氧化膜可以是天然氧化物膜。铝粉21的量与铝片20的量的比可以为例如0.1重量％以下。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009234862A Treating method of aluminum nitride powder and aluminum nitride 有权
标题翻译：氮化铝粉末和氮化铝的处理方法
公开(公告)号：JP2009234862A
公开(公告)日：2009-10-15
申请号：JP2008083720
申请日：2008-03-27
申请人： Tama Tlo Ltd , タマティーエルオー株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI , MIZUNO AI
IPC分类号： C01B21/072
摘要： PROBLEM TO BE SOLVED: To provide a treating method of an aluminum nitride powder, by which the wettability of the aluminum nitride powder with a metal or an organic material can be improved. SOLUTION: The treating method of an aluminum nitride powder includes a process for forming an aluminum oxide layer or an aluminum oxynitride layer on the surface of the aluminum nitride powder by heat treating the aluminum nitride powder in an oxygen-containing atmosphere. A process for producing the aluminum nitride powder by heat treating aluminum in a nitrogen atmosphere to react the aluminum with nitrogen may be provided before the process for forming the aluminum oxide layer or the aluminum oxynitride layer. In this case, it is preferable that the process for forming the aluminum oxide layer or the aluminum oxynitride layer is a process comprising forming the aluminum oxide layer or the aluminum oxynitride layer by arranging the aluminum nitride powder in the oxygen-containing atmosphere without cooling the aluminum nitride powder to room temperature after the aluminum nitride powder is produced. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种氮化铝粉末的处理方法，通过该方法可以提高氮化铝粉末与金属或有机材料的润湿性。解决方案：氮化铝粉末的处理方法包括通过在含氧气氛中对氮化铝粉末进行热处理，在氮化铝粉末的表面上形成氧化铝层或铝氧氮化物层的工艺。在形成氧化铝层或氧氮化铝层的工艺之前，可以提供通过在氮气氛中热处理铝以使铝与氮反应来制造氮化铝粉末的方法。在这种情况下，优选的是，形成氧化铝层或氧氮化铝层的方法是包括通过将氮化铝粉末放置在含氧气氛中而不使其冷却而形成氧化铝层或氮氧化铝层的工艺生产氮化铝粉末后，氮化铝粉末至室温。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009231573A Capacitor type storage 有权
标题翻译：电容式存储
公开(公告)号：JP2009231573A
公开(公告)日：2009-10-08
申请号：JP2008075678
申请日：2008-03-24
申请人： Tama Tlo Ltd , タマティーエルオー株式会社
发明人： OTSUKA KANJI , AKIYAMA YUTAKA , HASHIMOTO KAORU , ISHIWATARI SHINICHI , HATTORI SATOSHI , MIYAUCHI HIDEYUKI , SAITO NOBORU
IPC分类号： H01G4/18 , H01G4/08
摘要： PROBLEM TO BE SOLVED: To provide a capacitor type storage with a large capacitance per unit volume. SOLUTION: The capacitor type storage includes: a first conductive passage 21 and a second conductive passage 22 which are in parallel to each other; and a mixed layer 30 which is provided on the upper surface of the first conductive passage 21 and the upper surface of the second conductive passage 22 while having an insulating first substrate, a first conductive powder or first semiconductor powder dispersed in the first substrate. In this case, a mixed layer 10 provided on the lower surface of the first conductive passage 21 and the lower surface of the second conductive passage 22 while having an insulating second substrate and second conductive powder or second semiconductor powder dispersed in the second substrate can be available. A plurality of the first conductive passages 21 and the second conductive passages 22 can be provided respectively alternately. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有每单位体积的大电容的电容器型存储器。电容器型存储器包括：彼此平行的第一导电通道21和第二导电通道22; 以及混合层30，其设置在第一导电通道21的上表面和第二导电通道22的上表面上，同时具有绝缘的第一基板，分散在第一基板中的第一导电粉末或第一半导体粉末。在这种情况下，设置在第一导电通道21的下表面上的混合层10和第二导电通道22的下表面同时具有绝缘的第二基板和分散在第二基板中的第二导电粉末或第二半导体粉末可以是可用。可以交替地设置多个第一导电通路21和第二导电通路22。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010015328A Memory/logic conjugate system 审中-公开
标题翻译：内存/逻辑连接系统
公开(公告)号：JP2010015328A
公开(公告)日：2010-01-21
申请号：JP2008173905
申请日：2008-07-02
申请人： Incorporated Educational Institution Meisei , Tama Tlo Ltd , タマティーエルオー株式会社 , 学校法人明星学苑
发明人： OTSUKA KANJI , ITO TSUNEO , SATO YOICHI , YOSHIDA MASAHIRO , YAMAMOTO SHIGERU , KOYAMA TAKESHI , TANBA HIROKO , AKIYAMA YUTAKA
IPC分类号： G06F7/00
CPC分类号： G06F13/4022 , G11C5/02 , G11C7/1006 , G11C2213/71
摘要： PROBLEM TO BE SOLVED: To solve the problem that a band width becomes a bottleneck, because a crossbar switch copes with increase of a scale. SOLUTION: This memory/logic conjugate system is a system configured by three-dimensionally layering: a plurality of cluster chips respectively including a plurality of cluster memories 20 each disposed with basic cells 10 each having a memory circuit in a cluster state; and a controller chip for controlling the plurality of cluster memories. The plurality of cluster memories 20 positioned along a layering direction of the plurality of cluster memory chips and the controller chip are electrically connected to the controller chip through a multi-bus 11 including through-hole vias. By directly accessing an optional basic cell 10 from the controller chip through the multi-bus 11 to write truth value data, the optional basic cell 10 is changed over to a logic circuit. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题为了解决带宽变成瓶颈的问题，因为横杆开关处理标尺的增加。该存储器/逻辑共轭系统是通过三维分层来构造的系统：分别包括多个集群存储器20的多个集群存储器，每个集群存储器设置有具有集群状态的存储器电路的基本单元10; 以及用于控制多个集群存储器的控制器芯片。沿着多个集群存储器芯片的分层方向定位的多个集群存储器20和控制器芯片通过包括通孔通孔的多总线11电连接到控制器芯片。通过通过多总线11从控制器芯片直接访问可选的基本单元10以写真值数据，可选的基本单元10被切换到逻辑电路。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2007331995A Method for producing aluminum nitride-containing material, aluminum nitride-containing material and radiator of semiconductor device 审中-公开
标题翻译：用于生产含氮化镓材料的方法，含有氮化铝的材料和半导体器件的散热器
公开(公告)号：JP2007331995A
公开(公告)日：2007-12-27
申请号：JP2006167473
申请日：2006-06-16
申请人： Tama Tlo Kk , タマティーエルオー株式会社
发明人： KIYOMIYA YOSHIHIRO , OTSUKA KANJI , HASHIMOTO SHINYA , NAKADA YOSHIYUKI , SHINODA SHIGENARI , YAMAGUCHI TOSHIHISA , SAKURAI TOSHIAKI
IPC分类号： C01B21/072 , C22C29/16 , H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing material producible at a lower production cost comparing with heretofore. SOLUTION: The production method comprises the processes for: arranging aluminum pieces 21 on boron nitride powders or particles 20; generating an aluminum nitride-containing material by heating the boron nitride 20 and aluminum piece 21 at a temperature of 900 to 1,300°C in a nitrogen atmosphere of 5-30 atm to melt the aluminum piece (a first heat treatment process); cooling the resultant material; and increasing the content of aluminum nitride in the above material by re-heating the material at the temperature of 900 to 1,300°C in the nitrogen atmosphere of 5-30 atm. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：提供一种生产与以前相比生产成本低的生产氮化铝的材料的方法。解决方案：制造方法包括以下方法：将铝片21布置在氮化硼粉末或颗粒20上; 通过在氮气气氛中，在5-30大气压的900〜1300℃的温度下加热氮化硼20和铝片21来熔化铝片（第一热处理工艺），生成含氮化铝的材料; 冷却所得材料; 并且通过在5-30atm的氮气气氛中在900至1300℃的温度下再加热材料来增加上述材料中的氮化铝含量。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007186350A Methods for producing aluminum nitride-containing film, gallium nitride-containing film, aluminum gallium nitride-containing film, and aluminum gallium indium nitride-containing film 审中-公开
标题翻译：用于生产含有氮化铟的膜，含氮化镓的膜，含氮氮化镓的膜和含有氮化镓的含氮膜的方法
公开(公告)号：JP2007186350A
公开(公告)日：2007-07-26
申请号：JP2006003254
申请日：2006-01-11
申请人： Tama Tlo Kk , タマティーエルオー株式会社
发明人： OTSUKA KANJI , KIYOMIYA YOSHIHIRO , TAKANO YOSHIKAZU
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing film, with high productivity and at a low cost.
SOLUTION: The method for producing the aluminum nitride-containing film includes: a process for forming a boron nitride film 2 on a substrate 1; a process for forming an aluminum film 3 on the boron nitride film 2; and a process for forming the aluminum nitride-containing film 4 on the substrate 1 by heat-treating the aluminum film 3 and the boron nitride film 2 in a nitrogen atmosphere to melt the aluminum film 3. By the method for producing the aluminum nitride-containing film, the nitridation reaction of aluminum proceeds by the solid-liquid reaction of the boron nitride 2 and the molten aluminum film 3, and the aluminum nitride-containing film 4 is formed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高生产率和低成本生产含氮化铝的膜的方法。解决方案：含氮化铝膜的制造方法包括：在基板1上形成氮化硼膜2的工序; 在氮化硼膜2上形成铝膜3的工序; 以及通过在氮气气氛中对铝膜3和氮化硼膜2进行热处理来熔化铝膜3而在基板1上形成含氮化铝的膜4的工艺。通过制造氮化铝 - 通过氮化硼2和熔融铝膜3的固液反应进行铝的氮化反应，形成含氮化铝膜4。版权所有（C）2007，JPO＆INPIT

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