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1. 发明授权

US07728379B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07728379B2
公开(公告)日：2010-06-01
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

2. 发明申请

US20080073691A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080073691A1
公开(公告)日：2008-03-27
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L21/425
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

3. 发明申请

US20070018231A1 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US20070018231A1
公开(公告)日：2007-01-25
申请号：US11491054
申请日：2006-07-24
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

4. 发明授权

US07883967B2 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US07883967B2
公开(公告)日：2011-02-08
申请号：US11491054
申请日：2006-07-24
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

5. 发明申请

US20100171169A1 Nonvolatile semiconductor memory device, semiconductor device and manufactoring method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US20100171169A1
公开(公告)日：2010-07-08
申请号：US12659694
申请日：2010-03-17
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/788
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

6. 发明授权

US08093126B2 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US08093126B2
公开(公告)日：2012-01-10
申请号：US12659694
申请日：2010-03-17
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

7. 再颁专利

USRE44630E1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE44630E1
公开(公告)日：2013-12-10
申请号：US13616208
申请日：2012-09-14
申请人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
发明人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
IPC分类号： H01L21/331
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/11521 , H01L29/42332 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制栅电极设置在绝缘膜上。

8. 发明授权

US07521263B2 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device 有权
标题翻译：形成绝缘膜的方法，制造半导体器件的方法以及半导体器件
公开(公告)号：US07521263B2
公开(公告)日：2009-04-21
申请号：US11270536
申请日：2005-11-10
申请人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
发明人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
IPC分类号： H01L21/00
CPC分类号： H01L21/02236 , H01L21/022 , H01L21/28273 , H01L21/3142 , H01L21/31616 , H01L21/31645 , H01L29/513 , H01L29/7881
摘要： A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要翻译：形成绝缘膜的方法包括形成包括通过暴露于氧化剂而使其表面被氧化的材料的基膜。交替地供给含有金属材料的源气体和具有第一氧化力的第一氧化剂，以在基膜上形成第一绝缘膜。交替地供给含有金属材料的源气体和具有比第一氧化力更强的第二氧化力的第二氧化剂，以在第一绝缘膜上形成第二绝缘膜。

9. 发明申请

US20070020957A1 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device 有权
标题翻译：形成绝缘膜的方法，制造半导体器件的方法以及半导体器件
公开(公告)号：US20070020957A1
公开(公告)日：2007-01-25
申请号：US11270536
申请日：2005-11-10
申请人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
发明人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
IPC分类号： B05D3/08 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02236 , H01L21/022 , H01L21/28273 , H01L21/3142 , H01L21/31616 , H01L21/31645 , H01L29/513 , H01L29/7881
摘要： A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要翻译：形成绝缘膜的方法包括形成包括通过暴露于氧化剂而使其表面被氧化的材料的基膜。交替地供给含有金属材料的源气体和具有第一氧化力的第一氧化剂，以在基膜上形成第一绝缘膜。交替地供给含有金属材料的源气体和具有比第一氧化力更强的第二氧化力的第二氧化剂，以在第一绝缘膜上形成第二绝缘膜。

10. 发明授权

US08803221B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08803221B2
公开(公告)日：2014-08-12
申请号：US13231776
申请日：2011-09-13
申请人： Tetsuya Kai , Yoshio Ozawa
发明人： Tetsuya Kai , Yoshio Ozawa
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L21/76224 , H01L27/11568 , H01L29/42352 , H01L29/792
摘要： In one embodiment, a nonvolatile semiconductor memory device includes a substrate; a tunnel insulating film on the substrate; a charge storage layer on the tunnel insulating film; a block insulating film on the charge storage layer; a first element isolation insulating film in an element isolation trench in the substrate, having a bottom surface lower than an interface between the substrate and the tunnel insulating film, and having a top surface lower than an interface between the charge storage layer and the block insulating film; a second element isolation insulating film on the first element isolation insulating film, protruding to a top surface of the block insulating film, in contact with a side surface of the block insulating film, and having a higher Si concentration than the block insulating film; and a control gate electrode on the block insulating film and on the second element isolation insulating film.
摘要翻译：在一个实施例中，非易失性半导体存储器件包括衬底; 衬底上的隧道绝缘膜; 隧道绝缘膜上的电荷存储层; 电荷存储层上的块绝缘膜; 在衬底中的元件隔离沟槽中的第一元件隔离绝缘膜，其底表面低于衬底和隧道绝缘膜之间的界面，并且具有低于电荷存储层和块绝缘体之间的界面的顶表面电影; 第一元件隔离绝缘膜上的第二元件隔离绝缘膜突出到块绝缘膜的顶表面，与块绝缘膜的侧表面接触，并且具有比嵌段绝缘膜更高的Si浓度; 以及在所述块绝缘膜上和所述第二元件隔离绝缘膜上的控制栅电极。

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