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1. 发明授权

US07728379B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07728379B2
公开(公告)日：2010-06-01
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

2. 发明申请

US20080073691A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080073691A1
公开(公告)日：2008-03-27
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L21/425
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

3. 发明授权

US08860000B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08860000B2
公开(公告)日：2014-10-14
申请号：US13019630
申请日：2011-02-02
申请人： Kazuhiko Yamamoto , Takuya Konno
发明人： Kazuhiko Yamamoto , Takuya Konno
IPC分类号： H01L47/00 , H01L27/24 , H01L45/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2463 , H01L45/149 , H01L45/1658
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
摘要翻译：根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。下电极层设置在基板上。可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。上电极层设置在可变电阻层上。可变电阻层包括碳纳米结构和金属原子。碳纳米结构被堆叠以具有多个间隙。金属原子扩散到间隙中。

4. 发明授权

US08231934B2 Conductive paste for solar cell electrode 有权
标题翻译：太阳能电池电极导电膏
公开(公告)号：US08231934B2
公开(公告)日：2012-07-31
申请号：US12621729
申请日：2009-11-19
申请人： Norihiko Takeda , Takuya Konno
发明人： Norihiko Takeda , Takuya Konno
IPC分类号： B05D5/12 , H01L31/0224 , H01B1/08
CPC分类号： H01B1/22 , C03C8/18 , C03C8/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.
摘要翻译：为了在太阳能电池电极中同时获得低电阻和高粘合性，提供导电膏。用于太阳能电池电极的导电浆料包含导电粉末，有机介质和玻璃料，其是多于一种玻璃料的混合物，例如至少含有PbO的玻璃料和至少含有Bi 2 O 3的玻璃料的混合物。

5. 发明申请

US20110198556A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110198556A1
公开(公告)日：2011-08-18
申请号：US13019630
申请日：2011-02-02
申请人： Kazuhiko YAMAMOTO , Takuya Konno
发明人： Kazuhiko YAMAMOTO , Takuya Konno
IPC分类号： H01L47/00 , H01L21/44 , B82Y99/00 , B82Y40/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2463 , H01L45/149 , H01L45/1658
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
摘要翻译：根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。下电极层设置在基板上。可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。上电极层设置在可变电阻层上。可变电阻层包括碳纳米结构和金属原子。碳纳米结构被堆叠以具有多个间隙。金属原子扩散到间隙中。

6. 发明授权

US07718093B2 Electroconductive thick film composition, electrode, and solar cell formed therefrom 有权
标题翻译：导电厚膜组合物，电极和由其形成的太阳能电池
公开(公告)号：US07718093B2
公开(公告)日：2010-05-18
申请号：US12037306
申请日：2008-02-26
申请人： Takuya Konno
发明人： Takuya Konno
IPC分类号： H01B1/22
CPC分类号： C03C14/006 , C03C8/10 , C03C8/18 , C03C2214/08 , C03C2214/16 , H01B1/22 , H01L31/022408 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The electroconductive thick film paste of the present invention is a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell, and is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a solar cell comprising said electrode.
摘要翻译：本发明的导电性厚膜糊是含有银粒子，玻璃粒子和有机载体的银导电膏，用于连接太阳能电池的硅基板上的背面端子的电极和其特征在于所述银颗粒的平均粒径为3.0-15.0μm。本发明还涉及由上述组合物形成的电极和包括所述电极的太阳能电池。

7. 发明申请

US20080254567A1 Thick film conductive composition and processe for use in the manufacture of semiconductor device 失效
标题翻译：厚膜导电组合物和用于制造半导体器件的工艺
公开(公告)号：US20080254567A1
公开(公告)日：2008-10-16
申请号：US11786717
申请日：2007-04-12
申请人： Takuya Konno
发明人： Takuya Konno
IPC分类号： H01B1/22 , B32B15/04 , H01L31/0224 , B32B17/06
CPC分类号： H01L31/022425 , H01B1/16 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: a) electrically conductive silver powder; b) ZnO powder; c) lead-free glass frits wherein based on total glass frits: Bi2O3: >5 mol %, B2O3:
摘要翻译：本发明涉及一种厚膜导电组合物，其包含：a）导电银粉; b）ZnO粉末; c）基于总玻璃料的无铅玻璃料：Bi 2 O 3：5mol％，B 2 O _{3％：<15摩尔％，BaO：<5摩尔％，SrO：<5摩尔％，AL 2 2 3 3 <5摩尔％和d）有机介质，其中（ZnO的含量/银粉的含量）×100大于2.5。}

8. 发明授权

US07147804B2 Terminal electrode compositions for multilayer ceramic capacitors 失效
标题翻译：多层陶瓷电容器的端子电极组合物
公开(公告)号：US07147804B2
公开(公告)日：2006-12-12
申请号：US10671309
申请日：2003-09-25
申请人： Keiichiro Hayakawa , Takuya Konno , Hisashi Matsuno
发明人： Keiichiro Hayakawa , Takuya Konno , Hisashi Matsuno
IPC分类号： H01B1/22 , B05D5/12
CPC分类号： H01G4/2325
摘要： The present invention relates to terminal electrode compositions for multilayer ceramic capacitors. More specifically, it relates to terminal electrode compositions for multilayer ceramic capacitors, which compositions are made of a conductive-based powder and a glass frit and can be fired at a low temperature in a nitrogen atmosphere.
摘要翻译：本发明涉及多层陶瓷电容器的端子电极组合物。更具体地说，本发明涉及多层陶瓷电容器的端子电极组合物，该组合物由导电基粉末和玻璃料制成，并且可以在氮气气氛中在低温下烧制。

9. 发明申请

US20060202173A1 Terminal electrode compositions for multilayer ceramic capacitors 失效
标题翻译：多层陶瓷电容器的端子电极组合物
公开(公告)号：US20060202173A1
公开(公告)日：2006-09-14
申请号：US11430534
申请日：2006-05-09
申请人： Takuya Konno , Takayuki Kaneda
发明人： Takuya Konno , Takayuki Kaneda
IPC分类号： H01B1/22
CPC分类号： H01G4/30 , H01G4/2325
摘要： The present invention relates to terminal electrode compositions for multilayer ceramic capacitors. More specifically, it relates to terminal electrode compositions for multilayer ceramic capacitors, which compositions are made of a copper-based powder and an organic binder that can be fired at a low temperature in a nitrogen atmosphere.
摘要翻译：本发明涉及多层陶瓷电容器的端子电极组合物。更具体地说，本发明涉及多层陶瓷电容器的端子电极组合物，该组合物由可在氮气气氛中低温烧制的铜基粉末和有机粘合剂制成。

10. 发明授权

US08569731B2 Nonvolatile memory device and method for manufacturing same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08569731B2
公开(公告)日：2013-10-29
申请号：US12726743
申请日：2010-03-18
申请人： Takuya Konno , Hiroyuki Fukumizu , Kazuhito Nishitani
发明人： Takuya Konno , Hiroyuki Fukumizu , Kazuhito Nishitani
IPC分类号： H01L47/00
CPC分类号： H01L27/1021 , H01L21/76224 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A nonvolatile memory device includes: at least one first interconnection extending in a first direction; at least one second interconnection disposed above the first interconnection and extending in a second direction nonparallel to the first direction; a memory cell disposed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection and including a memory element; and an element isolation layer disposed between the memory cells. At least one dielectric film with a higher density than the element isolation layer is disposed on a sidewall surface of the memory cell.
摘要翻译：非易失性存储器件包括：沿第一方向延伸的至少一个第一互连; 设置在所述第一互连上方的至少一个第二互连并且沿与第一方向不平行的第二方向延伸; 存储单元，设置在所述第一互连和所述第二互连之间，所述存储单元在所述第一互连和所述第二互连的相交处并且包括存储元件; 以及设置在所述存储单元之间的元件隔离层。至少一个具有比元件隔离层更高密度的电介质膜设置在存储单元的侧壁表面上。

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