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    • 2. 发明申请
    • INPUT INFORMATION PROCESSING SYSTEM, INPUT INFORMATION PROCESSING METHOD, PROGRAM AND COMPUTER-READABLE RECORDING MEDIUM
    • 输入信息处理系统,输入信息处理方法,程序和计算机可读记录介质
    • US20130187856A1
    • 2013-07-25
    • US13823083
    • 2011-07-26
    • Takuya KonnoYoshikuni Shibata
    • Takuya KonnoYoshikuni Shibata
    • G06F3/033
    • G06F3/033G06F3/03543G06F3/03547G06F3/038G06F3/0481G06F3/0488G06F2203/0381G06F2203/04808
    • An input information processing system, which is configured so as to enable an operator to efficiently conduct work without interruption, and processes input information that has been inputted using an input device, is configured so as to comprise: a display means for displaying data to be processed on a display screen; a first input device for inputting first input information; a second input device for inputting second input information; an acquisition means for acquiring a predetermined position in the data to be processed, which is displayed on the display screen of the display means, on the basis of the first input information inputted using the first input device; and control means for clearly showing the predetermined position in the data to be processed which was acquired by the acquisition means on the data to be processed displayed on the display screen of the display means, and for controlling the data to be processed which is displayed on the display screen of the display means on the basis of the second input information inputted using the second input device.
    • 一种输入信息处理系统,其被配置为使得操作者能够有效地进行工作而不中断,并处理已经使用输入装置输入的输入信息,其包括:显示装置,用于显示要被 在显示屏上处理; 用于输入第一输入信息的第一输入装置; 用于输入第二输入信息的第二输入装置; 基于使用第一输入装置输入的第一输入信息,获取在显示装置的显示画面上显示的待处理数据中的预定位置的获取装置; 以及控制装置,用于清楚地示出由获取装置获取的要处理的数据中的预定位置,显示在显示装置的显示屏上的待处理数据,并且用于控制显示在显示装置上的待处理数据 基于使用第二输入装置输入的第二输入信息,显示装置的显示画面。
    • 6. 发明授权
    • Semiconductor device and method of manufacturing same
    • 半导体装置及其制造方法
    • US07728379B2
    • 2010-06-01
    • US11690428
    • 2007-03-23
    • Takuya KonnoYoshio OzawaTetsuya KaiYasushi NakasakiYuuichiro Mitani
    • Takuya KonnoYoshio OzawaTetsuya KaiYasushi NakasakiYuuichiro Mitani
    • H01L29/788H01L29/792
    • H01L29/7883H01L29/513H01L29/66825
    • A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
    • 半导体器件包括:半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。 半导体层在其表面部分具有沟道形成区域。 绝缘膜含有硅,锗和氧。 电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。 制造半导体器件的方法包括:在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅,锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层,所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。