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1. 发明授权

US08574809B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08574809B2
公开(公告)日：2013-11-05
申请号：US12461862
申请日：2009-08-26
申请人： Takeyoshi Mimura , Jun Iwashita
发明人： Takeyoshi Mimura , Jun Iwashita
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397
摘要： The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern.This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] PX—Y)a (1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.
摘要翻译：本发明提供能够以高分辨率形成抗蚀剂图案的正性抗蚀剂组合物和形成抗蚀剂图案的方法。该组合物是包含在酸性作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和在照射时产生酸的酸产生剂组分（B）的正性抗蚀剂组合物，所述树脂组分（A）含有包含由通式（1）表示的核心部分的聚合物[化学式1] PX-Y）a（1）其中P表示a价的有机基团; a表示2〜20的整数， Y表示碳原子数1〜12的亚芳基或亚烷基。 X表示可以在酸作用下切断的特定连接基团，以及与芯部分结合的臂部分，也由通过阴离子聚合法得到的聚合物链构成。

2. 发明授权

US08232040B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08232040B2
公开(公告)日：2012-07-31
申请号：US12620339
申请日：2009-11-17
申请人： Jun Iwashita , Takeyoshi Mimura
发明人： Jun Iwashita , Takeyoshi Mimura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）以及在曝光时产生酸的酸发生剂组分（B），其中所述基材组分（A）包含具有由羟基苯乙烯衍生的结构单元（a10）的聚合化合物（A1）和由一般表示的结构单元（a11）式（a11-1）表示：式中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基， R21表示烷基; R 22表示与该R 22基团键合的碳原子一起形成7〜10元环的脂肪族单环基的基团。

3. 发明申请

US20100055606A1 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20100055606A1
公开(公告)日：2010-03-04
申请号：US12461862
申请日：2009-08-26
申请人： Takeyoshi Mimura , Jun Iwashita
发明人： Takeyoshi Mimura , Jun Iwashita
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397
摘要： The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern.This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] PX—Y)a (1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.
摘要翻译：本发明提供能够以高分辨率形成抗蚀剂图案的正性抗蚀剂组合物和形成抗蚀剂图案的方法。该组合物是包含在酸性作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和在照射时产生酸的酸产生剂组分（B）的正性抗蚀剂组合物，所述树脂组分（A）含有包含由通式（1）表示的核心部分的聚合物[化学式1] P-X-Y）a（1）其中P表示a价的有机基团; a表示2〜20的整数， Y表示碳原子数1〜12的亚芳基或亚烷基。 X表示可以在酸作用下切断的特定连接基团，以及与芯部分结合的臂部分，也由通过阴离子聚合法得到的聚合物链构成。

4. 发明申请

US20100143845A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100143845A1
公开(公告)日：2010-06-10
申请号：US12620339
申请日：2009-11-17
申请人： Jun Iwashita , Takeyoshi Mimura
发明人： Jun Iwashita , Takeyoshi Mimura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）以及在曝光时产生酸的酸发生剂组分（B），其中所述基材组分（A）包含具有由羟基苯乙烯衍生的结构单元（a10）的聚合化合物（A1）和由一般表示的结构单元（a11）式（a11-1）表示：式中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基， R21表示烷基; R 22表示与该R 22基团键合的碳原子一起形成7〜10元环的脂肪族单环基的基团。

5. 发明授权

US08278022B2 Positive resist composition and method of forming resist pattern 失效
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08278022B2
公开(公告)日：2012-10-02
申请号：US12487083
申请日：2009-06-18
申请人： Takeyoshi Mimura , Makiko Irie
发明人： Takeyoshi Mimura , Makiko Irie
IPC分类号： G03C1/00 , G03F7/00
CPC分类号： G03F7/0397 , G03F7/0045
摘要： Provided are a novel positive resist composition that includes a low molecular weight material as a base material component, and a method of forming a resist pattern using the positive resist composition.A positive resist composition including: a base material component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) comprises a compound (A1) in which either a portion of, or all of, the hydrogen atoms of hydroxyl groups (—OH) within a phenolic compound (I) described below have been substituted with a group containing an acid dissociable, dissolution inhibiting group: the phenolic compound (I) including 4 triphenylmethane structures, and a tetravalent linking moiety that links the 4 triphenylmethane structures, wherein at least one of the 4 triphenylmethane structures has at least one phenolic hydroxyl group.
摘要翻译：提供一种新的正型抗蚀剂组合物，其包含作为基材成分的低分子量材料，以及使用正性抗蚀剂组合物形成抗蚀剂图案的方法。一种正型抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）以及在暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）包含化合物（A1），其中羟基（-OH）的氢原子的一部分或全部部分或全部在下面描述的酚类化合物（I）已被含有酸解离的溶解抑制基团的基团取代：包含4个三苯基甲烷结构的酚类化合物（I）和连接4个三苯基甲烷结构的四价连接部分，其中至少一个的四苯基甲烷结构具有至少一个酚羟基。

6. 发明授权

US07914968B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07914968B2
公开(公告)日：2011-03-29
申请号：US12374474
申请日：2007-06-08
申请人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
发明人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b′-3) shown below: wherein X″ represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y″ and Z″, U″, V″, and W″ each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, [Chemical Formula 2] R10″—SO3− (b-6) wherein R10″ represents a hydrocarbon group which may or may not have a substituent, wherein R7″ to R9″ each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R7″ to R9″ represent phenyl groups which do not have a substituent is excluded.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，包含由羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）和具有缩醛型（B-3）表示的阴离子部分，（b-3）表示的阴离子部分中的至少一个阴离子部分的酸产生剂（B1-i），（b-3） -4）和（b-5），具有下述通式（b-6）表示的阴离子部分的酸发生剂（B1-ⅱ）或具有阳离子部分的酸发生剂（B1-iii）通式（b'-3）：其中X“表示至少一个氢原子被氟原子取代的2至6个碳原子的亚烷基; Y“，”Z“，U”，V“和W”各自独立地表示1〜10个碳原子的烷基，其中至少一个氢原子被氟原子取代，[化学式2] R 10“ - SO 3 - （b-6）其中R 10“表示可以具有或不具有取代基的烃基，其中R7”至R9“各自独立地表示可以具有或不具有取代基的苯基或萘基; 条件是排除了R7“至R9”全部表示不具有取代基的苯基的情况。

7. 发明申请

US20100304289A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100304289A1
公开(公告)日：2010-12-02
申请号：US12374474
申请日：2007-06-08
申请人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
发明人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b′-3) shown below: wherein X″ represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y″ and Z″, U″, V″, and W″ each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, [Chemical Formula 2] R10″—SO3− (b-6) wherein R10″ represents a hydrocarbon group which may or may not have a substituent, wherein R7″ to R9″ each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R7″ to R9″ represent phenyl groups which do not have a substituent is excluded.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，包含由羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）和具有缩醛型（B-3）表示的阴离子部分，（b-3）表示的阴离子部分中的至少一个阴离子部分的酸产生剂（B1-i），（b-3） -4）和（b-5），具有下述通式（b-6）表示的阴离子部分的酸发生剂（B1-ⅱ）或具有阳离子部分的酸发生剂（B1-iii）通式（b'-3）：其中X“表示至少一个氢原子被氟原子取代的2至6个碳原子的亚烷基; Y“，”Z“，U”，V“和W”各自独立地表示1〜10个碳原子的烷基，其中至少一个氢原子被氟原子取代，[化学式2] R 10“ - SO 3 - （b-6）其中R 10“表示可以具有或不具有取代基的烃基，其中R7”至R9“各自独立地表示可以具有或不具有取代基的苯基或萘基; 条件是排除了R7“至R9”全部表示不具有取代基的苯基的情况。

8. 发明申请

US20090253075A1 POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：积极抵抗组合物，以及形成电阻图案的方法
公开(公告)号：US20090253075A1
公开(公告)日：2009-10-08
申请号：US12306376
申请日：2007-04-20
申请人： Takeyoshi Mimura , Akiya Kawaue
发明人： Takeyoshi Mimura , Akiya Kawaue
IPC分类号： G03F7/20 , G03F7/039
CPC分类号： G03F7/0397 , C08F212/08 , C08F220/28 , C08F222/1006
摘要： A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a1) derived from hydroxystyrene, a structural unit (a2) represented by general formula (a2-1) or (a2-2) shown below, and a structural unit (a3) represented by general formula (a3-1) or (a3-2) shown below.
摘要翻译：一种正型抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包括结构单元 a1），由通式（a2-1）表示的结构单元（a2）或下述（a2-2）表示的结构单元（a3），通式（a3-1）或（a3〜 2）如下所示。

9. 发明申请

US20050112498A1 Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：化学放大型正型抗蚀剂组合物，抗蚀剂层压材料，抗蚀剂图案形成方法和制造半导体器件的方法
公开(公告)号：US20050112498A1
公开(公告)日：2005-05-26
申请号：US11028456
申请日：2005-01-03
申请人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
IPC分类号： G03F7/039 , G03F7/11 , G03C1/76
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
摘要翻译：本发明提供了一种抗蚀剂组合物，其包含（A）聚羟基苯乙烯，其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代，并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时，通过酸的作用除去可离解的溶解抑制基团，和（B）通过辐射照射产生酸的成分，其中解离后的成分（A）的酸解离溶解抑制基团的保留率使用盐酸的试验为40％以下，并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物，其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代，支链烷氧基，并且当聚羟基苯乙烯的碱溶液中的溶解度增加时低级烷氧基 - 烷基通过酸的作用代替组分（A）而被除去。

10. 发明申请

US20080311515A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20080311515A1
公开(公告)日：2008-12-18
申请号：US12136391
申请日：2008-06-10
申请人： Takeyoshi Mimura , Takako Suzuki
发明人： Takeyoshi Mimura , Takako Suzuki
IPC分类号： G03F7/039 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) including a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) having an acetal-type acid dissociable, dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) (wherein Z represents a hydrogen atom or a group represented by general formula (b1-1-1); R401 represents an acid dissociable group; R41, R42 and R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; and X− represents an anion) or an acid generator (B1′) consisting of a compound represented by general formula (b1-1′).
摘要翻译：一种正型抗蚀剂组合物，其包含在酸性作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和在照射时产生酸的酸产生剂组分（B），所述树脂组分（A）包含结构单元 a1）和具有缩醛型酸解离性溶解抑制基团的结构单元（a2）和含有由通式（b1）表示的化合物构成的酸产生剂（B1）的酸发生剂成分（B） -1）（其中Z表示氢原子或由通式（b1-1-1）表示的基团; R401表示酸解离基团; R41，R42和R43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; X表示阴离子）或由通式（b1-1'）表示的化合物组成的酸发生剂（B1'）。

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