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1. 发明授权

US07914968B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07914968B2
公开(公告)日：2011-03-29
申请号：US12374474
申请日：2007-06-08
申请人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
发明人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b′-3) shown below: wherein X″ represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y″ and Z″, U″, V″, and W″ each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, [Chemical Formula 2] R10″—SO3− (b-6) wherein R10″ represents a hydrocarbon group which may or may not have a substituent, wherein R7″ to R9″ each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R7″ to R9″ represent phenyl groups which do not have a substituent is excluded.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，包含由羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）和具有缩醛型（B-3）表示的阴离子部分，（b-3）表示的阴离子部分中的至少一个阴离子部分的酸产生剂（B1-i），（b-3） -4）和（b-5），具有下述通式（b-6）表示的阴离子部分的酸发生剂（B1-ⅱ）或具有阳离子部分的酸发生剂（B1-iii）通式（b'-3）：其中X“表示至少一个氢原子被氟原子取代的2至6个碳原子的亚烷基; Y“，”Z“，U”，V“和W”各自独立地表示1〜10个碳原子的烷基，其中至少一个氢原子被氟原子取代，[化学式2] R 10“ - SO 3 - （b-6）其中R 10“表示可以具有或不具有取代基的烃基，其中R7”至R9“各自独立地表示可以具有或不具有取代基的苯基或萘基; 条件是排除了R7“至R9”全部表示不具有取代基的苯基的情况。

2. 发明申请

US20100304289A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100304289A1
公开(公告)日：2010-12-02
申请号：US12374474
申请日：2007-06-08
申请人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
发明人： Takeyoshi Mimura , Akiya Kawaue , Ryoichi Takasu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b′-3) shown below: wherein X″ represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y″ and Z″, U″, V″, and W″ each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, [Chemical Formula 2] R10″—SO3− (b-6) wherein R10″ represents a hydrocarbon group which may or may not have a substituent, wherein R7″ to R9″ each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R7″ to R9″ represent phenyl groups which do not have a substituent is excluded.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，包含由羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）和具有缩醛型（B-3）表示的阴离子部分，（b-3）表示的阴离子部分中的至少一个阴离子部分的酸产生剂（B1-i），（b-3） -4）和（b-5），具有下述通式（b-6）表示的阴离子部分的酸发生剂（B1-ⅱ）或具有阳离子部分的酸发生剂（B1-iii）通式（b'-3）：其中X“表示至少一个氢原子被氟原子取代的2至6个碳原子的亚烷基; Y“，”Z“，U”，V“和W”各自独立地表示1〜10个碳原子的烷基，其中至少一个氢原子被氟原子取代，[化学式2] R 10“ - SO 3 - （b-6）其中R 10“表示可以具有或不具有取代基的烃基，其中R7”至R9“各自独立地表示可以具有或不具有取代基的苯基或萘基; 条件是排除了R7“至R9”全部表示不具有取代基的苯基的情况。

3. 发明授权

US06936400B2 Negative resist composition 失效
标题翻译：负阻抗组成
公开(公告)号：US06936400B2
公开(公告)日：2005-08-30
申请号：US10603511
申请日：2003-06-25
申请人： Ryoichi Takasu , Miwa Miyairi , Jun Iwashita , Toshikazu Tachikawa
发明人： Ryoichi Takasu , Miwa Miyairi , Jun Iwashita , Toshikazu Tachikawa
IPC分类号： C08F8/16 , C08F220/28 , G03F7/038 , H01L21/027 , G03F7/004
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： A negative resist composition is provided which is less likely to swell in an alkali developing solution. An alkali-developable negative resist composition is disclosed comprising a compound (A) which generates an acid upon exposure to radiation, and a resin component (B) which becomes insoluble in alkali under the action of an acid, wherein the component (B) is a resin component containing: (b1) a unit which becomes insoluble in an alkali solution as a result of the formation of a lactone under the action of an acid generated from the component (A), and (b2) a unit having an alcoholic hydroxyl group.
摘要翻译：提供了在碱性显影溶液中不太可能溶胀的负性抗蚀剂组合物。公开了一种碱显影性负性抗蚀剂组合物，其包含在暴露于辐射时产生酸的化合物（A）和在酸的作用下变得不溶于碱的树脂组分（B），其中组分（B）为树脂成分含有：（b1）在由（A）成分产生的酸的作用下由于内酯形成而在碱溶液中不溶的单元，（b2）具有醇羟基的单元组。

4. 发明授权

US07989138B2 Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern 失效
标题翻译：含氟化合物，浸渍曝光用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07989138B2
公开(公告)日：2011-08-02
申请号：US12323212
申请日：2008-11-25
申请人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Ryoichi Takasu , Tomoyuki Hirano
发明人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Ryoichi Takasu , Tomoyuki Hirano
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/10 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/106 , Y10S430/146
摘要： A fluorine-containing compound represented by a general formula (c-1) shown below: [Chemical Formula 1] RX-AN-(OR2)a (c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].
摘要翻译：由下列通式（c-1）表示的含氟化合物：[化学式1] RX-AN-（OR2）a（c-1）[其中，RX表示有机基团，AN表示萘环其可以具有取代基，R2表示碱可解离基团，并且a表示1或2，条件是AN和所述R2基团中的至少一个含有氟原子]。

5. 发明申请

US20070178394A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20070178394A1
公开(公告)日：2007-08-02
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C5/00
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

6. 发明授权

US08198004B2 Resist composition 有权
标题翻译：抗蚀组成
公开(公告)号：US08198004B2
公开(公告)日：2012-06-12
申请号：US12252319
申请日：2008-10-15
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

7. 发明授权

US07541138B2 Resist composition 有权
公开(公告)号：US07541138B2
公开(公告)日：2009-06-02
申请号：US11621895
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/30
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

8. 发明授权

US07371510B2 Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern 有权
标题翻译：用于在液浸光刻工艺中使用的用于形成抗蚀剂保护膜的材料，复合膜和形成抗蚀剂图案的方法
公开(公告)号：US07371510B2
公开(公告)日：2008-05-13
申请号：US11702602
申请日：2007-02-06
申请人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
发明人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
IPC分类号： G03F7/11 , G03F7/20 , G03F7/207
CPC分类号： G03F7/2041 , G03F7/11
摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
摘要翻译：提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

9. 发明申请

US20060141400A1 Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method 审中-公开
标题翻译：浸渍曝光工艺 - 使用抗蚀剂保护膜形成材料，复合膜和抗蚀剂图案形成方法
公开(公告)号：US20060141400A1
公开(公告)日：2006-06-29
申请号：US10546358
申请日：2004-02-20
申请人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
发明人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
IPC分类号： G03F7/00
CPC分类号： G03F7/2041 , G03F7/11
摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
摘要翻译：提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

10. 发明授权

US07914967B2 Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern 有权
标题翻译：含氟化合物，浸渍曝光用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07914967B2
公开(公告)日：2011-03-29
申请号：US12184566
申请日：2008-08-01
申请人： Sanae Furuya , Takayoshi Mori , Takahiro Dazai , Ryoichi Takasu , Tomoyuki Hirano
发明人： Sanae Furuya , Takayoshi Mori , Takahiro Dazai , Ryoichi Takasu , Tomoyuki Hirano
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： C07C69/63 , C08F8/14 , C08F12/20 , C08F12/22 , C08F112/14 , C08F220/24 , C08F220/28 , C08F2220/302 , C09D125/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/146 , C08F12/24
摘要： A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a hydrocarbon group of 2 or more carbon atoms which may have a fluorine atom.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出改变的溶解性的基础组分（A），在照射时产生酸的酸产生剂组分（B）和含氟化合物（C）具有下述通式（c）所示的基团，并且含有至少一个氟原子：其中Q表示从单价亲水基团除去一个氢原子的基团; 并且R 1表示可以具有氟原子的2个以上碳原子的烃基。

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