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    • 4. 发明申请
    • Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device
    • 化学放大型正型抗蚀剂组合物,抗蚀剂层压材料,抗蚀剂图案形成方法和制造半导体器件的方法
    • US20050112498A1
    • 2005-05-26
    • US11028456
    • 2005-01-03
    • Kazuyuki NittaTakeyoshi MimuraSatoshi ShimataniWaki OkuboTatsuya Matsumi
    • Kazuyuki NittaTakeyoshi MimuraSatoshi ShimataniWaki OkuboTatsuya Matsumi
    • G03F7/039G03F7/11G03C1/76
    • G03F7/0392G03F7/11Y10S430/106
    • The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
    • 本发明提供了一种抗蚀剂组合物,其包含(A)聚羟基苯乙烯,其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代,并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时, 通过酸的作用除去可离解的溶解抑制基团,和(B)通过辐射照射产生酸的成分,其中解离后的成分(A)的酸解离溶解抑制基团的保留率 使用盐酸的试验为40%以下,并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物,其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代, 支链烷氧基,并且当聚羟基苯乙烯的碱溶液中的溶解度增加时 低级烷氧基 - 烷基通过酸的作用代替组分(A)而被除去。
    • 6. 发明授权
    • Method for decreasing surface defects of patterned resist layer
    • 降低图案化抗蚀剂层表面缺陷的方法
    • US06605417B2
    • 2003-08-12
    • US09771563
    • 2001-01-30
    • Kazuyuki NittaTaku NakaoSatoshi MaemoriTatsuya Matsumi
    • Kazuyuki NittaTaku NakaoSatoshi MaemoriTatsuya Matsumi
    • G03F700
    • G03F7/38
    • Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether)disulfonic acids.
    • 公开了一种通过以下步骤获得的用于减小基板表面上的图案化光致抗蚀剂层的表面缺陷的方法,所述方法包括以下步骤:(a)在基板表面上形成正性化学扩增光致抗蚀剂组合物的光致抗蚀剂层,(b )将光致抗蚀剂层图案化地曝光到光化射线,(c)对图案曝光的光致抗蚀剂层进行后曝光烘烤处理和(d)显影处理。 可以通过使后曝光烘烤处理后的光致抗蚀剂层与pH为3.5以下的酸性水溶液接触1〜90秒来实现。 酸性水溶液中所含的酸优选为芳香族磺酸,更优选为二苯基醚磺酸,例如十二烷基(二苯基醚)二磺酸。
    • 8. 发明授权
    • Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device
    • 化学放大型正型抗蚀剂组合物,抗蚀剂层压材料,抗蚀剂图案形成方法和制造半导体器件的方法
    • US07150956B2
    • 2006-12-19
    • US11028456
    • 2005-01-03
    • Kazuyuki NittaTakeyoshi MimuraSatoshi ShimataniWaki OkuboTatsuya Matsumi
    • Kazuyuki NittaTakeyoshi MimuraSatoshi ShimataniWaki OkuboTatsuya Matsumi
    • G03F7/004G03F7/30
    • G03F7/0392G03F7/11Y10S430/106
    • The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
    • 本发明提供了一种抗蚀剂组合物,其包含(A)聚羟基苯乙烯,其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代,并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时, 通过酸的作用除去可离解的溶解抑制基团,和(B)通过辐射照射产生酸的成分,其中解离后的成分(A)的酸解离溶解抑制基团的保留率 使用盐酸的试验为40%以下,并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物,其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代, 支链烷氧基,并且当聚羟基苯乙烯的碱溶液中的溶解度增加时 低级烷氧基 - 烷基通过酸的作用代替组分(A)而被除去。