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    • 4. 发明授权
    • Monolithic IC having pin photodiode and an electrically active element
accommodated on the same semi-conductor substrate
    • 具有引脚光电二极管的单片IC和容纳在同一半导体衬底上的电活性元件
    • US5410175A
    • 1995-04-25
    • US899591
    • 1992-06-18
    • Mikio KyomasuMasanori SaharaKenichi OkajimaHiroyasu Nakamura
    • Mikio KyomasuMasanori SaharaKenichi OkajimaHiroyasu Nakamura
    • H01L27/144H01L27/14
    • H01L27/1443
    • This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.
    • 本发明涉及具有PIN光电二极管和形成在单个半导体(硅))衬底上的n-p-n双极晶体管的单片IC。 在制造这种IC时,重要的是将光电二极管和双极晶体管电隔离。 此外,需要使基板的表面平坦。 根据本发明,通过在硅衬底上形成两个外延层,在层中形成沟槽,并在沟槽中埋入二氧化硅,可以实现上述两个器件之间的器件间隔离。 在根据本发明的单片IC中,布线容量小,并且可以实现高速性能。 在双极晶体管的下方形成p型掩埋层,从而防止双极晶体管和其它器件之间的穿通。 此外,本发明提供了一种用于制造适于制造单片IC的平面型双极晶体管的方法,并且还提供具有新结构的PIN光电二极管。
    • 5. 发明授权
    • Multiple access radio telephone system selectively operating on
full-duplex and half-duplex modes
    • 选择性地在全双工和半双工模式下操作的多址无线电话系统
    • US4712229A
    • 1987-12-08
    • US030400
    • 1987-03-26
    • Hiroyasu Nakamura
    • Hiroyasu Nakamura
    • H04B7/26H04M1/00H04W84/14H04B7/24
    • H04W84/14
    • A multiple access radio telephone system is connected to a telecommunication switching system and serves a group of N remote stations through M two-way radio channels (where M is smaller than N). The remote stations have corresponding subscriber line terminals in the switching system and are accessible to one of the two-way radio channels selected by a concentrator. For efficient channel utilization, the concentrator establishes a full-duplex mode connection between one of the corresponding subscriber line terminals of the switching system and the selected two-way radio channel in response to a request for an extragroup call and establishes a half-duplex mode connection between two of the remote stations through the selected two-way radio channel in response to a request for an intragroup call.
    • 多址无线电话系统连接到电信交换系统,并通过M个双向无线电信道(其中M小于N)为一组N个远程站服务。 远程站在交换系统中具有对应的用户线路终端,并且可由集中器选择的双向无线电频道之一访问。 为了有效的信道利用,集中器响应于对组外呼叫的请求建立交换系统的相应用户线路终端之一和所选择的双向无线电信道之间的全双工模式连接,并建立半双工模式 响应于对组内呼叫的请求,通过所选择的双向无线电信道在两个远程站之间进行连接。