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1. 发明申请

US20070169890A1 EXHAUST PROCESSING METHOD, PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：排气处理方法，等离子体处理方法和等离子体处理装置
公开(公告)号：US20070169890A1
公开(公告)日：2007-07-26
申请号：US11694889
申请日：2007-03-30
申请人： TAKESHI SHISHIDO , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
发明人： TAKESHI SHISHIDO , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32844 , C23C14/564 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
摘要翻译：化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

2. 发明授权

US07211708B2 Exhaust processing method, plasma processing method and plasma processing apparatus 失效
标题翻译：排气处理方法，等离子体处理方法和等离子体处理装置
公开(公告)号：US07211708B2
公开(公告)日：2007-05-01
申请号：US09822191
申请日：2001-04-02
申请人： Takeshi Shishido , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
发明人： Takeshi Shishido , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
IPC分类号： A62D3/00 , B08B15/00 , B08B5/00 , H05H1/03 , H05H1/16 , H05H1/48
CPC分类号： H01J37/32844 , C23C14/564 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
摘要翻译：化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

3. 发明申请

US20090095420A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090095420A1
公开(公告)日：2009-04-16
申请号：US12327428
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： H01L21/3065 , B05C9/08 , H01L21/302
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

4. 发明申请

US20090114155A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090114155A1
公开(公告)日：2009-05-07
申请号：US12327403
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23C16/46
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

5. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

6. 发明授权

US06447612B1 Film-forming apparatus for forming a deposited film on a substrate, and vacuum-processing apparatus and method for vacuum-processing an object 有权
标题翻译：在基板上形成沉积膜的成膜装置以及用于真空处理物体的真空处理装置和方法
公开(公告)号：US06447612B1
公开(公告)日：2002-09-10
申请号：US09625840
申请日：2000-07-26
申请人： Koichiro Moriyama , Masahiro Kanai , Yuzo Koda , Tadashi Hori
发明人： Koichiro Moriyama , Masahiro Kanai , Yuzo Koda , Tadashi Hori
IPC分类号： C23C1600
CPC分类号： C23C16/4409 , C23C16/545
摘要： A film-forming apparatus which has at least a vacuum vessel whose inside is capable of being vacuumed and a film-forming chamber having a discharge region provided in said vacuum vessel and in which a substrate web having a desired width and a desired length is arranged so as to constitute a part of said film-forming chamber, wherein said substrate web is continuously moved to pass through said discharge region of said film-forming chamber to continuously form a deposited film on said substrate web, characterized in that said film-forming chamber is provided with an opening-adjusting member such that said opening-adjusting member constitutes an entrance or/and an exit of said film-forming chamber, and a face of said opening-adjusting member which is opposed to said substrate web has one or more grooves formed substantially in parallel to a direction for said substrate web to be transported.
摘要翻译：一种成膜装置，其至少具有能够被真空的内部的真空容器和具有设置在所述真空容器中的放电区域的成膜室，其中布置具有期望宽度和期望长度的基材网以构成所述成膜室的一部分，其中所述基片网连续移动以通过所述成膜室的所述放电区域，以在所述基片网上连续形成沉积膜，其特征在于，所述成膜腔室设置有开口调节构件，使得所述开口调节构件构成所述成膜室的入口或/和出口，并且与所述基材腹板相对的所述开口调节构件的表面具有一个或多个更多的凹槽基本上平行于要输送的衬底腹板的方向形成。

7. 发明授权

US06261862B1 Process for producing photovoltaic element 有权
标题翻译：光电元件生产工艺
公开(公告)号：US06261862B1
公开(公告)日：2001-07-17
申请号：US09358930
申请日：1999-07-23
申请人： Tadashi Hori , Masahiro Kanai , Hirokazu Ohtoshi , Naoto Okada , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
发明人： Tadashi Hori , Masahiro Kanai , Hirokazu Ohtoshi , Naoto Okada , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.
摘要翻译：提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性使第一子层彼此不同，或者将一个电极的电位设置为零伏。由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

8. 发明授权

US06858087B2 Vacuum-processing method using a movable cooling plate during processing 失效
标题翻译：加工过程中使用可移动冷却板的真空加工方法
公开(公告)号：US06858087B2
公开(公告)日：2005-02-22
申请号：US10320430
申请日：2002-12-17
申请人： Tadashi Hori , Masahiro Kanai , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
发明人： Tadashi Hori , Masahiro Kanai , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
IPC分类号： C23C16/509 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： C23C16/4411 , C23C16/5096 , C23C16/545 , H01L21/67098
摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.
摘要翻译：一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理其特征在于，所述真空处理装置具有位于所述处理室外部的冷却板，并且配置在与所述处理室的周壁对置的位置，用于冷却所述处理室的周壁，以及用于使所述冷却以便改变冷却板和处理室的周壁之间的距离。一种使用真空处理装置对基板进行表面处理的真空处理方法。

9. 发明授权

US06576061B1 Apparatus and method for processing a substrate 有权
标题翻译：用于处理衬底的装置和方法
公开(公告)号：US06576061B1
公开(公告)日：2003-06-10
申请号：US09469797
申请日：1999-12-22
申请人： Koichiro Moriyama , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Naoto Okada , Hiroshi Shimoda , Hiroyuki Ozaki
发明人： Koichiro Moriyama , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Naoto Okada , Hiroshi Shimoda , Hiroyuki Ozaki
IPC分类号： H01L2100
CPC分类号： H01L21/67173 , H01L21/67236 , H01L21/67253 , H01L21/6776
摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.
摘要翻译：一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力，所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间，基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于，所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

10. 发明授权

US06547922B2 Vacuum-processing apparatus using a movable cooling plate during processing 失效
标题翻译：在加工过程中使用可动冷却板的真空处理装置
公开(公告)号：US06547922B2
公开(公告)日：2003-04-15
申请号：US09772987
申请日：2001-01-31
申请人： Tadashi Hori , Masahiro Kanai , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
发明人： Tadashi Hori , Masahiro Kanai , Koichiro Moriyama , Hiroshi Shimoda , Hiroyuki Ozaki
IPC分类号： H01L2100
CPC分类号： C23C16/4411 , C23C16/5096 , C23C16/545 , H01L21/67098
摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.
摘要翻译：一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理其特征在于，所述真空处理装置具有布置在与所述处理室的周壁相对的位置以冷却所述处理室的周壁的位置的冷却板，以及用于使所述冷却板移动以改变所述处理室的机构冷却板与处理室的周壁之间的距离。

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