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1. 发明申请

US20090114155A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090114155A1
公开(公告)日：2009-05-07
申请号：US12327403
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23C16/46
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

2. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

3. 发明申请

US20090095420A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090095420A1
公开(公告)日：2009-04-16
申请号：US12327428
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： H01L21/3065 , B05C9/08 , H01L21/302
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

4. 发明授权

US06926934B2 Method and apparatus for deposited film 失效
标题翻译：沉积膜的方法和装置
公开(公告)号：US06926934B2
公开(公告)日：2005-08-09
申请号：US09818640
申请日：2001-03-28
申请人： Atsushi Koike , Yukito Aota , Masahiro Kanai , Hiroshi Sugai
发明人： Atsushi Koike , Yukito Aota , Masahiro Kanai , Hiroshi Sugai
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/31 , H01L31/04 , H05H1/02 , C23C16/00
CPC分类号： H01J37/32623 , C23C16/24 , C23C16/5096 , H01J37/32697
摘要： In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.
摘要翻译：在根据本发明的沉积膜形成方法或装置中，其包括在装有排气装置的真空容器中设置放电电极，供应用于形成至少含有Si的沉积膜的氢气和原料气体元件，通过向放电电极供给高频电力，从原料气体产生等离子体，以及通过等离子体CVD在真空容器中的基板上形成沉积膜，其中辅助电极在真空容器中排列成等离子体，周期性地在不引起放电形成沉积膜的情况下对辅助电极施加变化的电压，从而可以在高成膜速率下在大面积上形成质量好，均匀性好的非晶硅系淀积膜。

5. 发明授权

US07582185B2 Plasma-processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07582185B2
公开(公告)日：2009-09-01
申请号：US10745604
申请日：2003-12-29
申请人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
发明人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.
摘要翻译：一种具有高频功率施加电极的等离子体处理装置，其中通过向高频电力施加电极提供VHF电力而产生等离子体。等离子体处理装置具有阻抗匹配装置，其包括串联连接的电容元件和电感元件。该装置被布置成使得阻抗匹配设备的电容元件和电感元件相对于高频功率施加电极的中心是对称的。

6. 发明授权

US06881684B2 Method of forming silicon nitride deposited film 失效
标题翻译：形成氮化硅沉积膜的方法
公开(公告)号：US06881684B2
公开(公告)日：2005-04-19
申请号：US10650710
申请日：2003-08-29
申请人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
发明人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
IPC分类号： C23C16/42 , C23C16/34 , C23C16/505 , C23C16/509 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , H01L21/02274 , H01L21/3185
摘要： A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.
摘要翻译：用于提供VHF频带的高频电力的平板高频电极和接地电极在真空容器中以小于8mm的间隔彼此相对设置; 至少将作为原料气体的硅烷类气体和氮气引入真空容器的反应空间，形成氮化硅沉积膜，反应空间的压力保持在40〜133℃。由此，可以获得质量好的氮化物膜。

7. 发明授权

US06949174B2 Milling apparatus 失效
标题翻译：铣床
公开(公告)号：US06949174B2
公开(公告)日：2005-09-27
申请号：US10444990
申请日：2003-05-27
申请人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
发明人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
IPC分类号： H05H1/10 , C23F4/00 , G11B7/26 , G11B11/105 , H01J37/32 , H01L21/00 , H05H1/11 , C23C14/35 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/3233
摘要： A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.
摘要翻译：提供了一种铣削设备，其中防止了处理对象在铣削处理中的温度升高，特别是其衬底的温度升高。在该装置中，电离机构2包括壳体20d，其在其面的中心部分处具有与由基板保持器6保持的基板5相对的开口; 灯丝被放置在从灯丝到基板5的直线被壳体20d截取的位置处; 并且在电离机构2周围设置电磁体31,32，用于产生磁场，以产生延伸通过开口20j到基板5的磁线。

8. 发明授权

US06397775B1 Deposited film forming system and process 有权
标题翻译：沉积成膜系统及工艺
公开(公告)号：US06397775B1
公开(公告)日：2002-06-04
申请号：US09419115
申请日：1999-10-15
申请人： Hitomi Sano , Masahiro Kanai , Atsushi Koike , Hiroshi Sugai
发明人： Hitomi Sano , Masahiro Kanai , Atsushi Koike , Hiroshi Sugai
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/509 , C23C16/511 , C23C16/545 , H01J37/32532
摘要： In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.
摘要翻译：在具有至少真空容器的沉积膜形成系统中，用于将成膜材料气体进料到真空容器中的装置，设置在真空容器内部的用于使材料气体进入等离子体的放电电极，以及电源导体，用于向放电电极施加高频电力，该系统包括一个接地屏蔽层，其设置成围绕真空容器内部的电源导体，以及多个电介质材料，其至少一部分设置在电源导体和地盾。还公开了使用沉积膜形成系统进行的工艺。该系统和工艺可以长时间保持大面积均匀的放电，并且可以在连续移动的带状基板上形成具有高质量和优异均匀性的沉积膜。

9. 发明申请

US20050029090A1 Method and apparatus for ionization film formation 审中-公开
标题翻译：用于电离膜形成的方法和装置
公开(公告)号：US20050029090A1
公开(公告)日：2005-02-10
申请号：US10940024
申请日：2004-09-14
申请人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
发明人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
IPC分类号： C23C14/04 , C23C14/32 , C23C14/35 , G11B11/105
CPC分类号： C23C14/046 , C23C14/32 , C23C14/355 , H01J2237/3137
摘要： A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要翻译：提供了一种用于通过用热阴极系统的电离机构离子化蒸发的颗粒以将离子化的颗粒注入基底而形成沉积膜的电离膜的形成方法。该方法包括将He气引入电离机构的步骤。

10. 发明授权

US06812164B2 Method and apparatus for ionization film formation 失效
标题翻译：电离膜形成的方法和装置
公开(公告)号：US06812164B2
公开(公告)日：2004-11-02
申请号：US10350019
申请日：2003-01-24
申请人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
发明人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
IPC分类号： H01L2131
CPC分类号： C23C14/046 , C23C14/32 , C23C14/355 , H01J2237/3137
摘要： A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要翻译：提供了一种用于通过用热阴极系统的电离机构离子化蒸发的颗粒以将离子化的颗粒注入基底而形成沉积膜的电离膜的形成方法。该方法包括将He气引入电离机构的步骤。

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