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1. 发明申请

US20120080683A1 THIN FILM TRANSITOR, DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：薄膜传输器，显示器件和液晶显示器件
公开(公告)号：US20120080683A1
公开(公告)日：2012-04-05
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： H01L27/15 , H01L29/786
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

2. 发明申请

US20090224247A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20090224247A1
公开(公告)日：2009-09-10
申请号：US12379874
申请日：2009-03-03
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L33/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251
摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.
摘要翻译：在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

3. 发明授权

US08670082B2 Thin film transistor, display device and liquid crystal display device 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置
公开(公告)号：US08670082B2
公开(公告)日：2014-03-11
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

4. 发明授权

US08310611B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08310611B2
公开(公告)日：2012-11-13
申请号：US12536066
申请日：2009-08-05
申请人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

5. 发明授权

US08049255B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08049255B2
公开(公告)日：2011-11-01
申请号：US12155504
申请日：2008-06-05
申请人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
发明人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/78678
摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.
摘要翻译：半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

6. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

7. 发明申请

US20100032680A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100032680A1
公开(公告)日：2010-02-11
申请号：US12536066
申请日：2009-08-05
申请人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

8. 发明授权

US08648976B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08648976B2
公开(公告)日：2014-02-11
申请号：US12700815
申请日：2010-02-05
申请人： Takeshi Sakai , Takuo Kaitoh
发明人： Takeshi Sakai , Takuo Kaitoh
IPC分类号： G02F1/136
CPC分类号： G02F1/136204 , H01L27/0248 , H01L27/124
摘要： A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.
摘要翻译：提供了可以防止由于静电引起的薄膜晶体管的击穿的技术。一种显示装置的制造方法，在形成构成作为像素的组合的显示区域外的驱动电路的多个薄膜晶体管时，形成与薄膜晶体管的栅电极连接的第一布线，薄膜晶体管，用于执行驱动信号的产生操作;以及第二布线，其将所述薄膜晶体管的栅极彼此相邻地连接在与所述第一布线相同的层中的所述驱动单元的形成区域中，并且在所述第一布线之后切割所述第二布线形成连接的薄膜晶体管。

9. 发明授权

US08247817B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08247817B2
公开(公告)日：2012-08-21
申请号：US12379874
申请日：2009-03-03
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251
摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.
摘要翻译：在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

10. 发明申请

US20090050896A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20090050896A1
公开(公告)日：2009-02-26
申请号：US12219900
申请日：2008-07-30
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L33/00 , G02F1/136 , G09G3/12
CPC分类号： H01L27/1251 , H01L27/1229
摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.
摘要翻译：本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。在a-Si层上形成n + Si层，在n + Si层上形成SD电极。虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。因此，可以实现产生小漏电流的多晶硅的底栅型TFT。

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