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1. 发明申请

US20120080683A1 THIN FILM TRANSITOR, DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：薄膜传输器，显示器件和液晶显示器件
公开(公告)号：US20120080683A1
公开(公告)日：2012-04-05
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： H01L27/15 , H01L29/786
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

2. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

3. 发明申请

US20100109009A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100109009A1
公开(公告)日：2010-05-06
申请号：US12608147
申请日：2009-10-29
申请人： Takeshi NODA , Toshio MIYAZAWA , Takuo KAITOH , Hiroyuki ABE
发明人： Takeshi NODA , Toshio MIYAZAWA , Takuo KAITOH , Hiroyuki ABE
IPC分类号： H01L33/00
CPC分类号： H01L29/78645 , H01L27/1214 , H01L29/42384 , H01L29/78621 , H01L29/78627
摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.
摘要翻译：提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生的漏光电流。

4. 发明申请

US20130048996A1 DISPLAY DEVICE AND MANUFACTURING PROCESS OF DISPLAY DEVICE 有权
标题翻译：显示设备的显示设备和制造过程
公开(公告)号：US20130048996A1
公开(公告)日：2013-02-28
申请号：US13596089
申请日：2012-08-28
申请人： Takeshi NODA , Tetsufumi Kawamura
发明人： Takeshi NODA , Tetsufumi Kawamura
IPC分类号： H01L33/36 , H01L21/34
CPC分类号： H01L29/786 , G02F1/1368 , H01L27/12 , H01L27/1225 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a first region and a second region, which are provided in the upper surface of the oxide semiconductor film, and a channel protective film which is provided in contact with a third region between the first region and the second region. In plan view, a region of the oxide semiconductor film, which overlaps with the gate electrode, is smaller than the third region, and a portion of the oxide semiconductor film except for a portion which overlaps with the gate electrode has a resistance lower than the portion.
摘要翻译：提供一种包括薄膜晶体管的显示装置。薄膜晶体管包括栅极电极，覆盖栅电极的栅极绝缘层，栅极绝缘层上方的氧化物半导体膜，源电极和漏电极，其分别设置为与第一区域和第二区域接触，设置在所述氧化物半导体膜的上表面中，以及沟道保护膜，所述沟道保护膜设置成与所述第一区域和所述第二区域之间的第三区域接触。在平面图中，与栅电极重叠的氧化物半导体膜的区域小于第三区域，除了与栅电极重叠的部分之外的一部分氧化物半导体膜的电阻比一部分。

5. 发明申请

US20110121408A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME 失效
标题翻译：半导体器件及其制造方法以及具有该半导体器件的电子器件
公开(公告)号：US20110121408A1
公开(公告)日：2011-05-26
申请号：US12984623
申请日：2011-01-05
申请人： Takeshi NODA , Hidehito KITAKADO , Takuya MATSUO
发明人： Takeshi NODA , Hidehito KITAKADO , Takuya MATSUO
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

6. 发明申请

US20130140536A1 Light Emitting Device and Manufacturing Method Thereof 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130140536A1
公开(公告)日：2013-06-06
申请号：US13672861
申请日：2012-11-09
申请人： Shunpei YAMAZAKI , Takeshi NODA , Yoshinari HIGAKI
发明人： Shunpei YAMAZAKI , Takeshi NODA , Yoshinari HIGAKI
IPC分类号： H01L51/52
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/5271 , H01L51/5284 , H01L2251/56
摘要： Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.
摘要翻译：公开了一种发光元件，在具有绝缘表面的基板上，包括与薄膜晶体管连接的第一电极和覆盖第一电极的端部的绝缘体，包含与第一电极接触的有机化合物的层，第二电极与含有机化合物的层接触。第一电极具有倾斜表面，并且倾斜表面反射来自含有机化合物的层的发射光。此外，吸收外部光的吸光多层膜设置在被绝缘体覆盖的第一电极的部分上。所述吸光性多层膜至少具有包含透光膜，膜部分吸收光和透光膜的三层结构。

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