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1. 发明授权

US5437734A Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US5437734A
公开(公告)日：1995-08-01
申请号：US193467
申请日：1994-02-08
申请人： Takeshi Matsushita , Dharam P. Gosain , Jonathan Westwater , Setsuo Usui , Kunio Hane
发明人： Takeshi Matsushita , Dharam P. Gosain , Jonathan Westwater , Setsuo Usui , Kunio Hane
IPC分类号： H01L31/068 , H01L31/0687 , H01L31/18 , H01L31/06 , H01L31/078
CPC分类号： H01L31/0687 , H01L31/068 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： Disclosed herein is a solar cell which is composed basically of a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a third semiconductor layer formed between them. The third semiconductor layer has a band gap narrower than that of the first and second semiconductor layers. The third semiconductor layer also has a pn junction therein. The semiconductor layers are each separated by a buffer layer in which the composition changes gradually across the thickness so that the lattice mismatch between the semiconductor layers is relieved.
摘要翻译：这里公开了一种太阳能电池，其基本上由第一导电类型的第一半导体层，第二导电类型的第二半导体层和在它们之间形成的第三半导体层组成。第三半导体层具有比第一和第二半导体层窄的带隙。第三半导体层也具有pn结。半导体层各自被缓冲层隔开，其中组合物在整个厚度上逐渐变化，使得半导体层之间的晶格失配缓解。

2. 发明授权

US5637180A Plasma processing method and plasma generator 失效
标题翻译：等离子体处理方法和等离子体发生器
公开(公告)号：US5637180A
公开(公告)日：1997-06-10
申请号：US533095
申请日：1995-09-25
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： C23C14/54 , C23C16/452 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C03C25/06
CPC分类号： H01J37/32871 , C23C16/452
摘要： A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.
摘要翻译：一种等离子体处理方法，用于制造半导体器件的工艺。在等离子体处理期间，从产生等离子体的区域发射紫外线。紫外线辐射阻挡装置阻止紫外线照射在样品表面上以保护其。阻挡装置将形成等离子体的颗粒通过到样品表面上。将穿过紫外线辐射阻挡板的颗粒植入样品中。或者，对被处理的样品表面进行蚀刻，或者将膜沉积在样品的经处理表面上。

3. 发明授权

US5627085A Method for hydrogenating a polycrystal silicon layer of a thin film transistor 失效
标题翻译：用于氢化薄膜晶体管的多晶硅层的方法
公开(公告)号：US5627085A
公开(公告)日：1997-05-06
申请号：US499651
申请日：1995-06-07
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/265 , H01L21/30 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/02 , H01L21/20
CPC分类号： H01L29/66765 , H01L21/3003
摘要： The present invention improves a current--voltage characteristic by perfectly eliminating defects in the polycrystal silicon layer of TFT by hydrogenation. In the first process, hydrogen is doped into the polycrystal silicon layer 16 of TFT 1 by the hydrogen plasma doping method to eliminate a greater part of the defects in the polycrystal silicon layer 16. Thereafter, in the second process, after an amorphous silicon nitride film 23 including hydrogen is formed on the polycrystal silicon layer 16 or on the stopper layer 17 provided on the polycrystal silicon layer 16, hydrogen is released from the amorphous silicon nitride film 23 including hydrogen by the annealing process and such released hydrogen is then diffused into the polycrystal silicon layer 16 in order to eliminate remaining defects in the polycrystal silicon layer 16.
摘要翻译：本发明通过利用氢化完全消除TFT多晶硅层中的缺陷来提高电流 - 电压特性。在第一工艺中，通过氢等离子体掺杂法将氢掺杂到TFT 1的多晶硅层16中，以消除多晶硅层16中的大部分缺陷。此后，在第二工序中，在非晶氮化硅在多晶硅层16上或设置在多晶硅层16上的阻挡层17上形成包含氢的膜23，通过退火工艺从包含氢的非晶氮化硅膜23释放氢，然后将这种释放的氢扩散到多晶硅层16，以消除多晶硅层16中的剩余缺陷。

4. 发明授权

US5567633A Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics 失效
标题翻译：具有改进的载流子迁移特性和漏电流特性的薄膜晶体管的制造方法
公开(公告)号：US5567633A
公开(公告)日：1996-10-22
申请号：US412946
申请日：1995-03-29
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786 , H01L21/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78678
摘要： A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
摘要翻译：由薄膜晶体管的有源层形成的多晶硅膜通过低温工艺完全氢化，从而降低电阻并且缓和漏极附近的电场，从而减小漏电流。覆盖它的栅极和绝缘膜形成在具有绝缘表面的基板上。在包括栅极的基板上形成氢化多晶硅膜，绝缘膜插入其间。在栅极正上方的多晶硅膜上形成氧化硅膜图案。源极/漏极区域基本上在氧化硅膜图案的两个外侧形成在多晶硅膜上。源极/漏极区域由依次堆叠在多晶硅膜上的含氢非晶硅膜，导电硅膜和金属膜形成。因此，含氢非晶硅膜用作偏移区域。

5. 发明授权

US06376290B1 Method of forming a semiconductor thin film on a plastic substrate 失效
标题翻译：在塑料基板上形成半导体薄膜的方法
公开(公告)号：US06376290B1
公开(公告)日：2002-04-23
申请号：US09116119
申请日：1998-07-16
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78603
摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译：提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。在基板上形成包括阻气层和难熔缓冲层的保护层。从而防止了从基板到非晶硅膜的气体渗透。也可以防止能量束辐射产生的热量传导到基板上。可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

6. 发明授权

US06285055B1 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device 有权
标题翻译：存储器件及其制造方法，以及半导体器件的集成电路及其制造方法
公开(公告)号：US06285055B1
公开(公告)日：2001-09-04
申请号：US09381987
申请日：1999-11-29
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/8221 , H01L21/84 , H01L27/1203 , H01L29/7883 , H01L29/792
摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.
摘要翻译：虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度，或存储区域（15）中的微粒（15a）的数量设定为五个以上。虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字的导电区域（13c）中的晶粒。即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。因此，信息可以持续很长时间。

7. 发明申请

US20050085099A1 Method of manufacturing a semiconductor device and a process of a thin film transistor 审中-公开
标题翻译：制造半导体器件的方法和薄膜晶体管的工艺
公开(公告)号：US20050085099A1
公开(公告)日：2005-04-21
申请号：US10976493
申请日：2004-10-29
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/786 , C30B1/00 , H01L21/36 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66765 , Y10S148/10
摘要： To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N+ doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film. In this state, a laser beam is radiated. The N+ doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature. As the amorphous silicon film is thicker in the area except the area under which the metallic film (the gate electrode) is formed than in the area under which the metallic film is formed, the maximum temperature of the surface of the film is equal and the overall film can be uniformly crystallized.
摘要翻译：为了使得当非晶半导体膜结晶并使整个膜均匀结晶时，根据衬底的结构（无论是否形成金属膜）来发射最佳能量束，首先，光致抗蚀剂膜和N < 通过剥离法选择性地去除光致抗蚀剂膜上的超掺杂非晶硅膜。因此，非金属硅膜在金属膜（栅电极）以外的区域中比在金属膜上的区域以外的区域更厚。在这种状态下，激光束被辐射。通过照射激光束使掺杂N +非晶硅膜和非晶硅膜熔融，之后将其冷却至室温使熔融区域结晶化。由于除了形成金属膜（栅电极）的区域以外的区域中，非晶硅膜比在形成金属膜的区域内的区域更厚，所以膜的表面的最高温度相等，并且整体膜可均匀结晶。

8. 发明授权

US6130142A Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate 失效
标题翻译：在基板上形成的量子线，其制造方法以及在基板上具有量子线的器件
公开(公告)号：US6130142A
公开(公告)日：2000-10-10
申请号：US376256
申请日：1999-08-18
申请人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
发明人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
IPC分类号： C30B11/00 , C30B11/12 , C30B25/00 , C30B25/04 , H01L21/20 , H01L33/06 , H01L21/00
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
摘要翻译：当加热硅衬底时，在其上蒸发金，其厚度为0.6nm，由此在衬底表面上形成熔融的合金液滴。然后，硅基板在小于0.5托的硅烷气体气氛中加热至450℃-650℃。结果，熔融的合金液滴作为催化剂发生硅烷气体分解反应，由此硅线在基板表面上生长。随后，除去硅线末端的金属合金液滴，使硅线的表面部分氧化。然后除去所得的表面氧化膜。结果，获得了通过表面氧化膜的厚度变薄的硅量子线。

9. 发明授权

US6130143A Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate 失效
公开(公告)号：US6130143A
公开(公告)日：2000-10-10
申请号：US376908
申请日：1999-08-18
申请人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
发明人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
IPC分类号： C30B11/00 , C30B11/12 , C30B25/00 , C30B25/04 , H01L21/20 , H01L33/06
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.

10. 发明授权

US5976957A Method of making silicon quantum wires on a substrate 失效
标题翻译：在基板上制造硅量子线的方法
公开(公告)号：US5976957A
公开(公告)日：1999-11-02
申请号：US956081
申请日：1997-10-24
申请人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
发明人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
IPC分类号： C30B11/00 , C30B11/12 , C30B25/00 , C30B25/04 , H01L21/20 , H01L33/06
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
摘要翻译：当加热硅衬底时，在其上蒸发金，其厚度为0.6nm，由此在衬底表面上形成熔融的合金液滴。然后，硅基板在小于0.5托的硅烷气体气氛中加热至450℃-650℃。结果，熔融的合金液滴作为催化剂发生硅烷气体分解反应，由此硅线在基板表面上生长。随后，除去硅线末端的金属合金液滴，使硅线的表面部分氧化。然后除去所得的表面氧化膜。结果，获得了通过表面氧化膜的厚度变薄的硅量子线。

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