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1. 发明授权

US4551729A Method of making thermal transfer type multicolor printing 失效
标题翻译：制作热转印型多色印刷的方法
公开(公告)号：US4551729A
公开(公告)日：1985-11-05
申请号：US511630
申请日：1983-07-07
申请人： Takeshi Kubo , Junji Kawano , Fumio Takahashi , Tsutomu Yamaguchi
发明人： Takeshi Kubo , Junji Kawano , Fumio Takahashi , Tsutomu Yamaguchi
IPC分类号： B41J2/325 , B41J33/60 , B41J35/16 , B41J35/18 , G01D15/10
CPC分类号： B41J35/18
摘要： A method for making a thermal transfer type multicolor printing. An ink ribbon is set over a platen roller with a printing paper being interposed between them, the ink ribbon having at predetermined intervals a plurality of ink zones each carrying one of heat-dissolving inks of different colors. Then, one of the ink zones is positioned at a printing position on the platen roller, the one ink zone being of a predetermined color. A thermal head is placed at the printing position against the positioned one ink zone, and drived for transferring a first dot line of the ink of the one ink zone to the printing paper so that one picture component, for the predetermined color, of a picture to be printed is reproduced by the use of the ink of the one ink zone. Thereafter, the printing paper and the ink ribbon are advanced for a subsequent printing when unreproduced portion of the picture component exists. The procedures of the driving of the thermal head and the advancing of the printing paper and the ink ribbon are repeated until the whole picture component for the predetermined color is reproduced on the printing paper. Then, the procedures after the setting of the ink ribbon are repeated with respect to the other ink zones of different colors for reproducing the remaining picture components of the different colors on the printing paper, so that a multicolor picture is reproduced on the printing paper.
摘要翻译：一种制作热转印型多色印刷的方法。墨带设置在压纸辊上，打印纸介于它们之间，墨带具有预定间隔的多个墨区，每个墨区都带有不同颜色的热溶性油墨之一。然后，一个油墨区域位于压纸辊上的打印位置，一个油墨区域是预定颜色。热打印头位于打印位置，抵靠定位的一个墨水区域，并被驱动以将一个墨水区域的墨水的第一点划线转印到打印纸上，使得一个图像分量用于预定颜色的图像通过使用一个墨水区域的墨水来再现。此后，当图像组件的未再生部分存在时，打印纸和色带前进用于随后的打印。重复驱动热头的步骤和打印纸和墨带的前进，直到在打印纸上再现用于预定颜色的整个图像分量。然后，相对于其他不同颜色的墨水区域重复设置墨带之后的步骤，以再现打印纸上的不同颜色的剩余图像分量，从而在打印纸上再现多色图像。

2. 发明授权

US07961768B2 Integrated semiconductor laser device and method of fabricating the same 失效
标题翻译：集成半导体激光器件及其制造方法
公开(公告)号：US07961768B2
公开(公告)日：2011-06-14
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译：提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

3. 发明授权

US07941196B2 Waterproof structure 有权
标题翻译：防水结构
公开(公告)号：US07941196B2
公开(公告)日：2011-05-10
申请号：US11900228
申请日：2007-09-10
申请人： Yasuhiko Kawasaki , Takeru Baba , Toshiyuki Murakami , Shigeru Kato , Tsutomu Yamaguchi
发明人： Yasuhiko Kawasaki , Takeru Baba , Toshiyuki Murakami , Shigeru Kato , Tsutomu Yamaguchi
IPC分类号： H04M1/00
CPC分类号： H04M1/18 , H04B1/3888 , H04M1/0249
摘要： A waterproof structure for a casing has a first casing, a second casing to be put together with the first casing, and a waterproof member formed of an elastic material to prevent water from penetrating between the first casing and the second casing. The second casing has a recess. The waterproof member has a peripheral part which, when fitted into the recess, prevents penetration of water. The peripheral part is provided at the periphery of the waterproof member, which is laid out all around space between the first casing and the second casing. A projection engages with a dent. A restriction part of the first casing, provided at a position facing the peripheral part and protruding toward the second casing, prevents the peripheral part from coming out.
摘要翻译：用于壳体的防水结构具有第一壳体，与第一壳体放在一起的第二壳体和由弹性材料形成的防水构件，以防止水在第一壳体和第二壳体之间穿透。第二壳体具有凹部。防水构件具有周边部，该周边部在嵌入凹部时防止水的渗透。外围部分设置在防水构件的周围，其布置在第一壳体和第二壳体之间的整个空间周围。一个突起与一个凹痕啮合。第一壳体的限制部分设置在面向周边部分并朝向第二壳体突出的位置，防止周边部件脱出。

4. 发明授权

US07773654B2 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

5. 发明申请

US20100003778A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER 审中-公开
标题翻译：制造半导体激光的方法
公开(公告)号：US20100003778A1
公开(公告)日：2010-01-07
申请号：US12274435
申请日：2008-11-20
申请人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
发明人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01S5/2081 , H01S5/209 , H01S5/2214 , H01S5/2224
摘要： A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.
摘要翻译：半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层，在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

6. 发明授权

US07567605B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07567605B2
公开(公告)日：2009-07-28
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

7. 发明申请

US20090022197A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090022197A1
公开(公告)日：2009-01-22
申请号：US12104756
申请日：2008-04-17
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
IPC分类号： H01L33/00 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在其他半导体激光元件的主表面上形成Au电镀。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

8. 发明申请

US20070077669A1 Nitride-based semiconductor device and method of fabricating the same 审中-公开
公开(公告)号：US20070077669A1
公开(公告)日：2007-04-05
申请号：US11607896
申请日：2006-12-04
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

9. 发明申请

US20060021490A1 Keyboard device for keyboard instrument 失效
标题翻译：键盘乐器键盘设备
公开(公告)号：US20060021490A1
公开(公告)日：2006-02-02
申请号：US11185857
申请日：2005-07-21
申请人： Tsutomu Yamaguchi
发明人： Tsutomu Yamaguchi
IPC分类号： G10C3/18
CPC分类号： G10C3/12
摘要： A high-quality keyboard device for a keyboard instrument, which can be manufactured by a simplified manufacturing process and at reduced manufacturing costs. A keyframe is formed by a molded piece of a synthetic resin. A plurality of front rail pins and a plurality of balance rail pins are arranged in a juxtaposed manner in a left-right direction at a front part and a central part of the keyframe in a front-rear direction. A plurality of keys are made of wood and each have a balance rail pin hole formed in a central portion thereof in the front-rear direction. A first reinforcing member and a second reinforcing member are made of metal and provided in the vicinity of the balance rail pins and the front rail pins for reinforcement of rigidity of the keyframe. The keys are swingably supported on the keyframe in a state where the balance rail pins are each engaged with the balance rail pin hole associated therewith and at the same time the keys are prevented from being swung in the left-right direction by the front rail pins associated therewith.
摘要翻译：用于键盘乐器的高品质键盘装置，其可以通过简化的制造过程和降低的制造成本来制造。关键帧由合成树脂的模制件形成。多个前轨销和多个平衡轨销在前后方向上以关键框的前部和中心部分沿左右方向并列布置。多个键由木材制成，并且每个键具有在前后方向上形成在其中心部分的平衡导轨销孔。第一加强构件和第二加强构件由金属制成并且设置在平衡轨销和前导轨销附近，用于加强关键框架的刚性。在平衡轨销彼此相配合的平衡轨针销孔的状态下，键被可摆动地支撑在关键帧上，同时通过前导轨销防止键在左右方向上摆动相关联。

10. 发明授权

US06759139B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US06759139B2
公开(公告)日：2004-07-06
申请号：US10081842
申请日：2002-02-25
申请人： Tatsuya Kunisato , Nobuhiko Hayashi , Hiroki Ohbo , Masayuki Hata , Tsutomu Yamaguchi
发明人： Tatsuya Kunisato , Nobuhiko Hayashi , Hiroki Ohbo , Masayuki Hata , Tsutomu Yamaguchi
IPC分类号： H01L2912
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02387 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L29/2003 , H01S5/32341 , Y10T428/12528 , Y10T428/24802
摘要： A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.
摘要翻译：获得能够在厚度较小的底层上形成由不同于下层的材料构成的位错密度低的氮化物系半导体元件的氮化物系半导体元件。这种氮化物基半导体元件包括以规定间隔形成的多个掩模层，以与底层的上表面接触，同时部分地暴露形成在底层的上表面上的下层和氮化物类半导体层，掩模层，由与底层不同的材料组成。相邻掩模层之间的最小距离小于位于相邻掩模层之间的底层的暴露部分的宽度。

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