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1. 发明申请

US20100003778A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER 审中-公开
标题翻译：制造半导体激光的方法
公开(公告)号：US20100003778A1
公开(公告)日：2010-01-07
申请号：US12274435
申请日：2008-11-20
申请人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
发明人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01S5/2081 , H01S5/209 , H01S5/2214 , H01S5/2224
摘要： A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.
摘要翻译：半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层，在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

2. 发明申请

US20090290612A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20090290612A1
公开(公告)日：2009-11-26
申请号：US12251529
申请日：2008-10-15
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
IPC分类号： H01S5/22
CPC分类号： H01S5/2231 , H01S5/1064 , H01S5/4025 , H01S5/4031
摘要： A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.
摘要翻译：具有双通道脊结构的半导体激光器包括：脊; 位于脊的相对侧的通道部分，夹着脊，并且具有低于脊的等效折射率的等效折射率; 以及限定通道部分的外表面的层，并且具有高于通道部分的等效折射率的等效折射率。该脊具有朝向光出射端面变宽的宽度的喇叭形棱结构，并且脊的宽度最窄的通道部分的宽度比在光出射端面处的通道部分宽。

3. 发明授权

US07778299B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07778299B2
公开(公告)日：2010-08-17
申请号：US12251529
申请日：2008-10-15
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/1064 , H01S5/4025 , H01S5/4031
摘要： A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.
摘要翻译：具有双通道脊结构的半导体激光器包括：脊; 位于脊的相对侧的通道部分，夹着脊，并且具有低于脊的等效折射率的等效折射率; 以及限定通道部分的外表面的层，并且具有高于通道部分的等效折射率的等效折射率。该脊具有朝向光出射端面变宽的宽度的喇叭形棱结构，并且脊的宽度最窄的通道部分的宽度比在光出射端面处的通道部分宽。

4. 发明申请

US20060098704A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20060098704A1
公开(公告)日：2006-05-11
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

5. 发明授权

US07804871B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07804871B2
公开(公告)日：2010-09-28
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

6. 发明授权

US07756180B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07756180B2
公开(公告)日：2010-07-13
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

7. 发明申请

US20080310473A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20080310473A1
公开(公告)日：2008-12-18
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/22 , H01S5/20
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

8. 发明授权

US07961768B2 Integrated semiconductor laser device and method of fabricating the same 失效
标题翻译：集成半导体激光器件及其制造方法
公开(公告)号：US07961768B2
公开(公告)日：2011-06-14
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译：提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

9. 发明授权

US07941196B2 Waterproof structure 有权
标题翻译：防水结构
公开(公告)号：US07941196B2
公开(公告)日：2011-05-10
申请号：US11900228
申请日：2007-09-10
申请人： Yasuhiko Kawasaki , Takeru Baba , Toshiyuki Murakami , Shigeru Kato , Tsutomu Yamaguchi
发明人： Yasuhiko Kawasaki , Takeru Baba , Toshiyuki Murakami , Shigeru Kato , Tsutomu Yamaguchi
IPC分类号： H04M1/00
CPC分类号： H04M1/18 , H04B1/3888 , H04M1/0249
摘要： A waterproof structure for a casing has a first casing, a second casing to be put together with the first casing, and a waterproof member formed of an elastic material to prevent water from penetrating between the first casing and the second casing. The second casing has a recess. The waterproof member has a peripheral part which, when fitted into the recess, prevents penetration of water. The peripheral part is provided at the periphery of the waterproof member, which is laid out all around space between the first casing and the second casing. A projection engages with a dent. A restriction part of the first casing, provided at a position facing the peripheral part and protruding toward the second casing, prevents the peripheral part from coming out.
摘要翻译：用于壳体的防水结构具有第一壳体，与第一壳体放在一起的第二壳体和由弹性材料形成的防水构件，以防止水在第一壳体和第二壳体之间穿透。第二壳体具有凹部。防水构件具有周边部，该周边部在嵌入凹部时防止水的渗透。外围部分设置在防水构件的周围，其布置在第一壳体和第二壳体之间的整个空间周围。一个突起与一个凹痕啮合。第一壳体的限制部分设置在面向周边部分并朝向第二壳体突出的位置，防止周边部件脱出。

10. 发明授权

US07773654B2 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

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