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1. 发明授权

US07903709B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07903709B2
公开(公告)日：2011-03-08
申请号：US12357282
申请日：2009-01-21
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译：半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部，在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度的第一区域以外的区域。

2. 发明授权

US07773654B2 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

3. 发明申请

US20100080000A1 LASER DIODE DEVICE AND DISPLAY APPARATUS 审中-公开
标题翻译：激光二极管器件和显示器
公开(公告)号：US20100080000A1
公开(公告)日：2010-04-01
申请号：US12565670
申请日：2009-09-23
申请人： Daijiro INOUE , Yasuyuki BESSHO , Masayuki HATA
发明人： Daijiro INOUE , Yasuyuki BESSHO , Masayuki HATA
IPC分类号： G02B27/18 , H01S3/23 , H01S3/04
CPC分类号： H04N9/3161 , G03B21/2033 , H01S5/02212 , H01S5/0224 , H01S5/02248 , H01S5/02276 , H01S5/02484 , H01S5/4031 , H01S5/4093 , H04N9/3105 , H04N9/3111
摘要： A laser diode device includes a red laser diode element, a green laser diode element and a blue laser diode element. The red, green and blue laser diode elements are arranged in a single package in a state of being connected to wires for supplying power independently. Additionally, the blue laser diode element is arranged between the red laser diode element and the green laser diode element as viewed from a laser beam-emitting direction.
摘要翻译：激光二极管器件包括红色激光二极管元件，绿色激光二极管元件和蓝色激光二极管元件。红色，绿色和蓝色激光二极管元件被布置在单个封装中，处于连接到用于独立供电的导线的状态。此外，从激光束发射方向观察，蓝色激光二极管元件布置在红色激光二极管元件和绿色激光二极管元件之间。

4. 发明申请

US20090238230A1 SEMICONDUCTOR LASER APPARATUS 审中-公开
标题翻译：半导体激光设备
公开(公告)号：US20090238230A1
公开(公告)日：2009-09-24
申请号：US12476677
申请日：2009-06-02
申请人： Yasuyuki BESSHO , Masayuki HATA , Daijiro INOUE
发明人： Yasuyuki BESSHO , Masayuki HATA , Daijiro INOUE
IPC分类号： H01S5/40
CPC分类号： H01S5/4043 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/4087 , H01L2924/00014
摘要： A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.
摘要翻译：红色半导体激光器件中的p型焊盘电极和第一端子通过导线连接。红外半导体激光器件中的p型焊盘电极和第二端子通过导线连接。蓝紫色半导体激光器件中的p电极和第三端子通过导线连接。蓝紫色半导体激光器件中的n电极对安装件进行导电。红外半导体激光器件中的n电极和安装件通过导线连接，而红外半导体激光器件中的n电极和安装座通过导线连接。安装座内有第四个终端。

5. 发明申请

US20090185594A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090185594A1
公开(公告)日：2009-07-23
申请号：US12357282
申请日：2009-01-21
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/026 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译：半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部，在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度的第一区域以外的区域。

6. 发明申请

US20090097523A1 SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20090097523A1
公开(公告)日：2009-04-16
申请号：US12333764
申请日：2008-12-12
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.
摘要翻译：第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

7. 发明授权

US07450622B2 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07450622B2
公开(公告)日：2008-11-11
申请号：US11723846
申请日：2007-03-22
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

8. 发明申请

US20070274360A1 Semiconductor laser element and semiconductor laser device 审中-公开
标题翻译：半导体激光元件和半导体激光器件
公开(公告)号：US20070274360A1
公开(公告)日：2007-11-29
申请号：US11710922
申请日：2007-02-27
申请人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/2223
摘要： A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along a predetermined direction and flat portions provided on outer sides in a width direction of the raised portion. The insulating layer is formed on upper surfaces of the flat portions and side surfaces of the raised portion. The electrode includes a first portion provided along the predetermined direction on the raised portion and a second portion including a plurality of protruding portions protruding outward from the first portion in the width direction of the raised portion. A gap through which the insulating layer is exposed is provided between each adjacent two of the plurality of protruding portions.
摘要翻译：半导体激光元件包括半导体层，绝缘层和电极。半导体层形成在基板上，并且包括沿着预定方向延伸的凸起部分和设置在凸起部分的宽度方向上的外侧的平坦部分。绝缘层形成在凸起部分的平坦部分和侧表面的上表面上。电极包括沿着预定方向设置在凸起部分上的第一部分和第二部分，其包括从凸起部分的宽度方向上的第一部分向外突出的多个突出部分。在相邻的两个突出部分之间设置有绝缘层暴露的间隙。

9. 发明申请

US20070012929A1 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20070012929A1
公开(公告)日：2007-01-18
申请号：US11520583
申请日：2006-09-14
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01L33/00 , H01L31/12 , H01L29/24 , H01L27/15 , H01L29/26
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

10. 发明授权

US08101465B2 Method of fabricating a semiconductor device with a back electrode 有权
标题翻译：制造具有背面电极的半导体器件的方法
公开(公告)号：US08101465B2
公开(公告)日：2012-01-24
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

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