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1. 发明授权

US08574361B2 Group-III element nitride crystal producing method and group-III element nitride crystal 有权
标题翻译： III族元素氮化物晶体制造方法和III族元素氮化物晶体
公开(公告)号：US08574361B2
公开(公告)日：2013-11-05
申请号：US12524811
申请日：2008-03-05
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L21/322
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

2. 发明授权

US09281438B2 Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal 有权
标题翻译： III族元素氮化物晶体的制造方法和III族元素氮化物晶体的制造装置
公开(公告)号：US09281438B2
公开(公告)日：2016-03-08
申请号：US12679372
申请日：2008-09-26
申请人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
发明人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
IPC分类号： C30B19/02 , H01L33/00 , C30B9/10 , C30B29/40 , H01L21/02
CPC分类号： H01L33/0075 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , Y10T117/1024
摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.
摘要翻译：将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶从凝固的原料中取出。模板设置在远离坩埚底部的位置。

3. 发明申请

US20100213576A1 METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE USING GROUP III NITRIDE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产III族氮化物晶体基板，III族氮化物晶体基板的方法和使用III族氮化物晶体基板的半导体器件
公开(公告)号：US20100213576A1
公开(公告)日：2010-08-26
申请号：US12681718
申请日：2008-10-08
申请人： Kouichi Hiranaka , Hisashi Minemoto , Takeshi Hatakeyama , Osamu Yamada
发明人： Kouichi Hiranaka , Hisashi Minemoto , Takeshi Hatakeyama , Osamu Yamada
IPC分类号： H01L29/20 , H01L21/20 , H01L21/66
CPC分类号： C30B29/403 , B82Y20/00 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02625 , H01L33/0075 , H01S5/0206 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S2304/04
摘要： Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed.
摘要翻译：公开了一种III族氮化物晶体基板的制造方法。通过使用助熔剂的生长方法形成III族氮化物晶体。 III族氮化物晶体衬底在等于或高于在晶体形成期间通过侵入晶体的III族氮化物晶体衬底内的焊剂可以排出到III族氮化物之外的最低温度的温度下进行热处理晶体基板，并且等于或低于III族氮化物晶体基板的表面不分解的最高温度。

4. 发明申请

US20100078606A1 PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：生产第三类元素氮化物晶体和第三类元素氮化物晶体的方法
公开(公告)号：US20100078606A1
公开(公告)日：2010-04-01
申请号：US12524811
申请日：2008-03-05
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01B1/06 , C01B21/06 , C30B17/00
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

5. 发明申请

US20140030549A1 GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 审中-公开
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20140030549A1
公开(公告)日：2014-01-30
申请号：US14041366
申请日：2013-09-30
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L31/0304 , C30B29/40 , G02B1/02
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

6. 发明申请

US20100192839A1 PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：生产第三类元素氮化物晶体的方法和用于生产第三类元素氮化物晶体的装置
公开(公告)号：US20100192839A1
公开(公告)日：2010-08-05
申请号：US12679372
申请日：2008-09-26
申请人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
发明人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
IPC分类号： C30B19/08
CPC分类号： H01L33/0075 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , Y10T117/1024
摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.
摘要翻译：将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶从凝固的原料中取出。模板设置在远离坩埚底部的位置。

7. 发明授权

US08916124B2 Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same 有权
标题翻译： III族氮化物晶体，用于生长III族氮化物晶体的方法及其生长装置
公开(公告)号：US08916124B2
公开(公告)日：2014-12-23
申请号：US12745809
申请日：2008-11-27
申请人： Hisashi Minemoto , Osamu Yamada , Takeshi Hatakeyama , Hiroaki Hoshikawa , Yasunori Tokunou
发明人： Hisashi Minemoto , Osamu Yamada , Takeshi Hatakeyama , Hiroaki Hoshikawa , Yasunori Tokunou
IPC分类号： C01B21/06 , C30B29/38 , C30B15/00 , C30B19/00 , C30B7/00 , C30B9/00 , C30B11/00 , C30B17/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B29/10 , C30B29/40 , C30B19/06 , C30B9/10 , C30B19/02
CPC分类号： C30B29/403 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/06 , C30B19/063 , C30B29/406 , Y10T117/1096
摘要： When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.
摘要翻译：当III族氮化物晶体在包含至少III族元素，氮和碱金属或碱土金属的熔体50的含氮气体的加压气氛中生长时，保持容器上述熔体50围绕X轴和Y轴方向彼此不同的两个轴摆动。

8. 发明申请

US20100260656A1 GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR GROWING THE SAME 有权
标题翻译： III类氮化物晶体，用于生长III族氮化物晶体的方法及其生长装置
公开(公告)号：US20100260656A1
公开(公告)日：2010-10-14
申请号：US12745809
申请日：2008-11-27
申请人： Hisashi Minemoto , Osamu Yamada , Takeshi Hatakeyama , Hiroaki Hoshikawa , Yasunori Tokunou
发明人： Hisashi Minemoto , Osamu Yamada , Takeshi Hatakeyama , Hiroaki Hoshikawa , Yasunori Tokunou
IPC分类号： C30B15/02 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/06 , C30B19/063 , C30B29/406 , Y10T117/1096
摘要： When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an x-axis and a Y-axis.
摘要翻译：当III族氮化物晶体在包含至少III族元素，氮和碱金属或碱土金属的熔体50的含氮气体的加压气氛中生长时，保持容器上述熔体50围绕彼此不同的方向（例如x轴和Y轴）绕两个轴摆动。

9. 发明授权

US09295261B2 Aqueous microemulsions containing pyrethroid compounds 有权
标题翻译：含有拟除虫菊酯化合物的水性微乳液
公开(公告)号：US09295261B2
公开(公告)日：2016-03-29
申请号：US12282529
申请日：2007-03-28
申请人： Shingo Fujii , Munehiro Suzuki , Osamu Yamada
发明人： Shingo Fujii , Munehiro Suzuki , Osamu Yamada
IPC分类号： A01N53/00
CPC分类号： A01N53/00 , A01N25/02 , A01N25/04 , A01N37/38 , A01N25/30 , A01N2300/00
摘要： The present invention relates to new aqueous microemulsions containing organic pesticide compounds of limited water-solubility and to their use for plant protection, including seed and crop protection, and protection or non-living material. The aqueous microemulsions comprise a) at least one pyrethroid compound P; b) at least one organic solvent, selected from compounds of the formula I R1—(O-Alk)m-O—C(O)R2 (I) wherein m is 1, 2 or 3, R1 is H, C1-C6-alkyl or C(O)R3, R2 is hydrogen or C1-C4-alkyl, which may be unsubstituted or substituted with OH, Alk is C2-C6-alkylene, and R3 is hydrogen or C1-C4-alkyl, which may be unsubstituted or substituted with OH; c) at least one surfactant; and d) water.
摘要翻译：本发明涉及含有水溶性有限的有机农药化合物的新的含水微乳液及其用于植物保护的用途，包括种子和作物保护以及保护或非生物材料。含水微乳液包含a）至少一种拟除虫菊酯化合物P; b）至少一种选自式I R1-（O-Alk）mO-C（O）R 2（I）的化合物的有机溶剂，其中m是1,2或3，R 1是H，C 1 -C 6烷基或C（O）R 3，R 2是氢或C 1 -C 4烷基，其可以是未取代的或被OH取代，Alk是C 2 -C 6亚烷基，R 3是氢或C 1 -C 4 - 烷基，其可以是未取代的或用OH取代; c）至少一种表面活性剂; 和d）水。

10. 发明授权

US08638026B2 Stage drive device 失效
标题翻译：舞台驱动装置
公开(公告)号：US08638026B2
公开(公告)日：2014-01-28
申请号：US13123199
申请日：2009-10-06
申请人： Masashi Shibahara , Mikio Tokuyama , Koichiro Takeuchi , Shigeru Haneda , Osamu Yamada , Naoki Sakamoto , Eiichi Hazaki , Akito Tanokuchi
发明人： Masashi Shibahara , Mikio Tokuyama , Koichiro Takeuchi , Shigeru Haneda , Osamu Yamada , Naoki Sakamoto , Eiichi Hazaki , Akito Tanokuchi
IPC分类号： H01L41/08
CPC分类号： H01J37/20 , H01J2237/20221 , H01J2237/20264 , H01J2237/28
摘要： A stage comprises a linear guide rail (2) for guiding a movable table (4), a driven bar (12), a linear drive actuator in contact with the driven bar (12) to transmit driving force to the driven bar (12), and parallel plate springs (30) for holding opposite ends of the driven bar (12). A drive transmitting surface of the linear drive actuator is provided so as to be separated from the movable table (4), and this prevents the accuracy of positioning from being reduced. Also, the parallel springs (30) reduce deforming forces applied to sections supporting the driven bar (12), and this prevents the driven bar from being damaged. The configuration makes the stage highly accurate and highly reliable.
摘要翻译：平台包括用于引导可动台（4）的直线导轨（2），从动杆（12），与从动杆（12）接触的线性驱动致动器，以将驱动力传递到从动杆（12）和用于保持从动杆（12）的相对端的平行板簧（30）。线性驱动致动器的驱动传递表面设置成与可移动台（4）分离，这防止了定位精度的降低。此外，平行弹簧（30）减小施加到支撑从动杆（12）的部分的变形力，并且这防止被驱动杆被损坏。该配置使舞台高度准确和高度可靠。

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