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1. 发明授权

US09281438B2 Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal 有权
标题翻译： III族元素氮化物晶体的制造方法和III族元素氮化物晶体的制造装置
公开(公告)号：US09281438B2
公开(公告)日：2016-03-08
申请号：US12679372
申请日：2008-09-26
申请人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
发明人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
IPC分类号： C30B19/02 , H01L33/00 , C30B9/10 , C30B29/40 , H01L21/02
CPC分类号： H01L33/0075 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , Y10T117/1024
摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.
摘要翻译：将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶从凝固的原料中取出。模板设置在远离坩埚底部的位置。

2. 发明授权

US08574361B2 Group-III element nitride crystal producing method and group-III element nitride crystal 有权
标题翻译： III族元素氮化物晶体制造方法和III族元素氮化物晶体
公开(公告)号：US08574361B2
公开(公告)日：2013-11-05
申请号：US12524811
申请日：2008-03-05
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L21/322
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

3. 发明申请

US20140030549A1 GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 审中-公开
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20140030549A1
公开(公告)日：2014-01-30
申请号：US14041366
申请日：2013-09-30
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L31/0304 , C30B29/40 , G02B1/02
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

4. 发明申请

US20100192839A1 PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：生产第三类元素氮化物晶体的方法和用于生产第三类元素氮化物晶体的装置
公开(公告)号：US20100192839A1
公开(公告)日：2010-08-05
申请号：US12679372
申请日：2008-09-26
申请人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
发明人： Takeshi Hatakeyama , Hisashi Minemoto , Kouichi Hiranaka , Osamu Yamada
IPC分类号： C30B19/08
CPC分类号： H01L33/0075 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , Y10T117/1024
摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.
摘要翻译：将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶从凝固的原料中取出。模板设置在远离坩埚底部的位置。

5. 发明申请

US20100213576A1 METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE USING GROUP III NITRIDE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产III族氮化物晶体基板，III族氮化物晶体基板的方法和使用III族氮化物晶体基板的半导体器件
公开(公告)号：US20100213576A1
公开(公告)日：2010-08-26
申请号：US12681718
申请日：2008-10-08
申请人： Kouichi Hiranaka , Hisashi Minemoto , Takeshi Hatakeyama , Osamu Yamada
发明人： Kouichi Hiranaka , Hisashi Minemoto , Takeshi Hatakeyama , Osamu Yamada
IPC分类号： H01L29/20 , H01L21/20 , H01L21/66
CPC分类号： C30B29/403 , B82Y20/00 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02625 , H01L33/0075 , H01S5/0206 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S2304/04
摘要： Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed.
摘要翻译：公开了一种III族氮化物晶体基板的制造方法。通过使用助熔剂的生长方法形成III族氮化物晶体。 III族氮化物晶体衬底在等于或高于在晶体形成期间通过侵入晶体的III族氮化物晶体衬底内的焊剂可以排出到III族氮化物之外的最低温度的温度下进行热处理晶体基板，并且等于或低于III族氮化物晶体基板的表面不分解的最高温度。

6. 发明申请

US20100078606A1 PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：生产第三类元素氮化物晶体和第三类元素氮化物晶体的方法
公开(公告)号：US20100078606A1
公开(公告)日：2010-04-01
申请号：US12524811
申请日：2008-03-05
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01B1/06 , C01B21/06 , C30B17/00
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

7. 发明申请

US20090278744A1 PHASED ARRAY ANTENNA 审中-公开
标题翻译：天线阵列
公开(公告)号：US20090278744A1
公开(公告)日：2009-11-12
申请号：US12090024
申请日：2006-10-11
申请人： Hideki Kirino , Kouichi Hiranaka , Takeshi Hatakeyama
发明人： Hideki Kirino , Kouichi Hiranaka , Takeshi Hatakeyama
IPC分类号： H01Q1/38
CPC分类号： H01P1/184 , H01Q3/34 , H01Q9/045 , H01Q21/0093
摘要： There is provided a phased array antenna having variable phase shifters constituted by using a variable dielectric-constant dielectric substance whose dielectric constant varies according to an applied electric field, which antenna can dispense with a DC blocking element that causes mismatch, and reduce deformation of the beam shape even when beam tilt occurs, in the case where the variable phase shifters are divided into those for right-side tilt and those for left-side tilt and the phase shift amounts thereof are independently controlled.The phased array antenna is provided with a feeding phase shift unit (130) having a laminated structure obtained by laminating at least a ground conductor layer (117), an insulator layer (118), a main conductor layer (119), a variable dielectric-constant dielectric layer (120), and a sub conductor layer (121) in this order, and a propagation characteristic variable line (105) having a line on the sub conductor layer in an area which planarly overlaps a line on the main conductor layer is provided on the feeding phase shift unit. By applying a bias voltage between the main conductor layer and the sub conductor layer, the dielectric constant of the variable dielectric-constant dielectric substance in the propagation characteristic variable line area is varied to control the propagation characteristics. Thereby, a DC blocking element to be inserted in series into the feeding line can be dispensed with.
摘要翻译：提供了一种具有可变移相器的相控阵天线，该可变移相器通过使用介电常数根据所施加的电场而变化的可变介电常数介电物质构成，该天线可以省略导致失配的DC阻挡元件，并减少即使发生光束倾斜，在可变移相器被分割成用于右侧倾斜的那些的情况下，以及用于左侧倾斜的可变移相器和相移量的可变移相器被独立地控制的情况下。相控阵天线设置有馈电相移单元（130），该馈电相移单元具有通过层叠至少接地导体层（117），绝缘体层（118），主导体层（119），可变电介质 - 常数介质层（120）和副导体层（121），以及传播特性可变线（105），其在与主导体层上的线平面重叠的区域中的副导体层上具有线设置在馈电相移单元上。通过在主导体层和副导体层之间施加偏置电压，改变传播特性可变线区域中的可变介电常数电介质的介电常数，以控制传播特性。由此，可以省略将串联插入给料线的直流阻塞元件。

8. 发明申请

US20110228276A1 NITROGEN OXIDE SENSING ELEMENT, NITROGEN OXIDE SENSOR, NITROGEN OXIDE CONCENTRATION DETERMINATION DEVICE USING SAME, AND METHOD FOR DETERMINING NITROGEN OXIDE CONCENTRATION 失效
标题翻译：氮氧化物传感元件，氮氧化物传感器，使用其的氮氧化物浓度测定装置以及用于测定氮氧化物浓度的方法
公开(公告)号：US20110228276A1
公开(公告)日：2011-09-22
申请号：US13131200
申请日：2009-11-06
申请人： Kouichi Hiranaka , Toyofumi Nagamatsu , Yoshihiko Sadaoka , Yoshiteru Itagaki
发明人： Kouichi Hiranaka , Toyofumi Nagamatsu , Yoshihiko Sadaoka , Yoshiteru Itagaki
IPC分类号： G01N21/00 , G01N7/00
CPC分类号： G01N21/77 , G01N21/7703 , G01N31/22 , G01N33/497 , G01N2021/7773 , G01N2021/7783
摘要： The nitrogen oxide sensing element of the present invention is such that a sensing film (11) is formed on the surface of a substrate (12a), the sensing film including a polymer containing as dispersed therein a porphyrin containing cobalt as a central metal, or a single derivative having a porphyrin skeleton containing cobalt as a central metal or a mixture of derivatives each having a porphyrin skeleton containing cobalt as a central metal; thus, this sensing element is capable of determining the concentration of NO with high sensitivity and satisfactory accuracy under the condition that the cobalt porphyrin is not affected by reaction inhibitors such as O2 and CO even in the atmosphere.
摘要翻译：本发明的氮氧化物感测元件使得在基板（12a）的表面上形成感测膜（11），该感测膜包括含有分散在其中的含有钴作为中心金属的卟啉的聚合物，或具有含有钴作为中心金属的卟啉骨架的单一衍生物或各自具有含有钴作为中心金属的卟啉骨架的衍生物的混合物; 因此，即使在大气中钴卟啉也不受反应抑制剂如O2和CO的影响，该感应元件能够以高灵敏度和令人满意的精度确定NO的浓度。

9. 发明授权

US08828734B2 Nitric oxide detection element and process for producing same 有权
标题翻译：一氧化氮检测元件及其制造方法
公开(公告)号：US08828734B2
公开(公告)日：2014-09-09
申请号：US13814155
申请日：2011-07-12
申请人： Kouichi Hiranaka , Toyofumi Nagamatsu , Yoshihiko Sadaoka , Yoshiteru Itagaki
发明人： Kouichi Hiranaka , Toyofumi Nagamatsu , Yoshihiko Sadaoka , Yoshiteru Itagaki
IPC分类号： G01N21/77 , G01N1/22 , G01N33/00 , G01N31/22 , G01N21/78
CPC分类号： G01N21/783 , G01N31/224 , G01N33/0037 , Y02A50/245 , Y10T436/177692 , Y10T436/25875
摘要： Provided are a nitric oxide detection element capable of detecting NO gas contained in a mixed gas at a high speed even when the amount thereof is a super trace amount of ten and several parts per billion; and a process for producing the element. In a nitric oxide detection element having a substrate 12 and a sensing film 11 formed on a surface of the substrate, the sensing film is composed of nitric oxide sensing particles and a polymer adhesive. The nitric oxide sensing particles are produced by adsorbing a dye having a porphyrin skeleton and having, as a central metal, divalent cobalt onto surfaces of inorganic particles.
摘要翻译：提供一种能够高速检测混合气体中所含的NO气体的一氧化氮检测元件，即使其量超过十倍和十亿分之一的超痕量，和该元件的制造方法。在具有形成在基板的表面上的基板12和感测膜11的一氧化氮检测元件中，感测膜由一氧化氮感测颗粒和聚合物粘合剂构成。一氧化氮感测颗粒是通过吸附具有卟啉骨架的染料和在无机颗粒的表面上具有二价钴作为中心金属来制备的。

10. 发明授权

US07282255B2 Flexible printed circuit board and process for producing the same 失效
标题翻译：柔性印刷电路板及其制造方法
公开(公告)号：US07282255B2
公开(公告)日：2007-10-16
申请号：US10516576
申请日：2003-04-17
申请人： Kouichi Hiranaka , Ryuichi Nakagami , Mitsuhiro Fukuoka , Motohiro Yamashita
发明人： Kouichi Hiranaka , Ryuichi Nakagami , Mitsuhiro Fukuoka , Motohiro Yamashita
IPC分类号： B32B3/00
CPC分类号： H05K3/388 , C25D5/10 , C25D7/0614 , H05K1/0393 , Y10S428/901 , Y10T428/1291 , Y10T428/24917
摘要： The present invention relates to a flexible printed circuit board which has extremely high adhesion performance and on which very fine circuit patterns can be formed by etching, and to a method for producing the same. In the present invention, in the flexible printed circuit board wherein a copper thin film made of copper or an alloy containing primarily copper is directly formed on at least one side of a plastic film substrate, and copper is formed further on the copper thin film by the electrolytic plating method, the above-mentioned copper thin film has a two-layer structure in which a layer including at least a crystalline structure is formed on the surface side thereof, and the X-ray relative intensity ratio between crystal lattice plane indices (200)/(111) in the above-mentioned crystalline structure is 0.1 or less.
摘要翻译：本发明涉及一种柔性印刷电路板，其具有非常高的粘合性能，并且可以通过蚀刻形成非常精细的电路图案及其制造方法。在本发明中，在由塑料薄膜基板的至少一面直接形成由铜或含有铜的合金构成的铜薄膜的柔性印刷电路基板中，在铜薄膜上进一步形成铜，电解电镀方法中，上述铜薄膜具有其表面侧形成至少具有结晶结构的层的两层结构，并且晶格面平面指数（X射线相对强度比） 200）/（111）在0.1以上。

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