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    • 10. 发明授权
    • Semiconductor inspection apparatus
    • 半导体检测仪器
    • US06714030B2
    • 2004-03-30
    • US10390412
    • 2003-03-18
    • Ryuji KohnoHideo MiuraYoshishige EndoMasatoshi KanamaruAtsushi HosoganeHideyuki AokiNaoto Ban
    • Ryuji KohnoHideo MiuraYoshishige EndoMasatoshi KanamaruAtsushi HosoganeHideyuki AokiNaoto Ban
    • G01R3102
    • H01L22/32G01R1/06711G01R1/06738G01R1/07314G01R3/00H01L23/13H01L2924/0002H01L2924/13091H01L2924/00
    • A semiconductor inspection apparatus which is possible to inspect a plurality of semiconductor devices collectively at one time, which has conventionally been difficult because of precision or the like of probes. A method of manufacturing the semiconductor inspection apparatus comprises the steps of forming a cover film on a surface of the silicon substrate and forming a plurality of probes of a polygonal cone shape or a circular cone shape through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a beam or a diaphragm for each probe through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a through hole corresponding to the probe through etching after patterning by photolithography, and after the cover film is removed, forming an insulating film on the surface of the silicon substrate, forming a metal film on a surface of the insulating film, and forming a wiring lead through etching after patterning by photolithography.
    • 可以一次共同地检查多个半导体器件的半导体检查装置,由于探针的精度等,以前难以进行。 一种制造半导体检查装置的方法包括以下步骤:在硅衬底的表面上形成覆盖膜,并通过光刻图案化之后通过蚀刻形成多个锥形或圆锥形的多个探针, 被去除,再次在硅衬底的表面上形成覆盖膜,并且通过光刻在图案化之后通过蚀刻形成用于每个探针的光束或隔膜,在除去覆盖膜之后,再次在硅表面上形成覆盖膜 在通过光刻图案化之后通过蚀刻形成与探针对应的通孔,并且在除去覆盖膜之后,在硅衬底的表面上形成绝缘膜,在绝缘膜的表面上形成金属膜,以及 通过光刻在图案化之后通过蚀刻形成布线引线。