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1. 发明申请

US20140014950A1 ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL 有权
标题翻译：主动矩阵基板，其制造方法和显示面板
公开(公告)号：US20140014950A1
公开(公告)日：2014-01-16
申请号：US13976056
申请日：2011-12-20
申请人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
发明人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
IPC分类号： H01L27/12
CPC分类号： H01L27/1248 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L27/124 , H01L27/1296 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.
摘要翻译：有源矩阵基板（20a）包括形成在绝缘基板（10a）上的栅极（25）和形成在栅电极（25）上并由焙烧的SOG材料制成的平坦化膜（26）。栅电极（25）是包括形成在绝缘基板（10a）上的由铜以外的金属制成的第一导电膜（27）的多层膜，形成在第一导电膜（27）上的第二导电膜（28）并由铜制成，第三导电膜（29）形成在第二导电膜（28）上，并由除铜以外的金属制成。

2. 发明授权

US09087749B2 Active matrix substrate, and display panel 有权
标题翻译：有源矩阵基板和显示面板
公开(公告)号：US09087749B2
公开(公告)日：2015-07-21
申请号：US13976056
申请日：2011-12-20
申请人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
发明人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
IPC分类号： H01L29/12 , H01L27/12 , H01L29/49 , H01L29/786 , G02F1/1362 , G02F1/1368 , H01L29/45
CPC分类号： H01L27/1248 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L27/124 , H01L27/1296 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.
摘要翻译：有源矩阵基板（20a）包括形成在绝缘基板（10a）上的栅极（25）和形成在栅电极（25）上并由焙烧的SOG材料制成的平坦化膜（26）。栅电极（25）是包括形成在绝缘基板（10a）上的由铜以外的金属制成的第一导电膜（27）的多层膜，形成在第一导电膜（27）上的第二导电膜（28）并由铜制成，第三导电膜（29）形成在第二导电膜（28）上，并由除铜以外的金属制成。

3. 发明申请

US20120108018A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US20120108018A1
公开(公告)日：2012-05-03
申请号：US13383220
申请日：2010-03-16
申请人： Tohru Okabe , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara
发明人： Tohru Okabe , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/42384
摘要： A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming a source electrode (13a) and a drain electrode (13b) overlapping the gate electrode (11a) and separated apart from each other, and a second interconnect connected via the contact hole to the first interconnect, a step of successively forming an oxide semiconductor film (14) and a second insulating film (15), and thereafter, patterning the second insulating film (15) to form an interlayer insulating film (15a), and a step of reducing the resistance of the oxide semiconductor film (14) exposed through the interlayer insulating film (15a) to form a pixel electrode (14b).
摘要翻译：制造薄膜晶体管基板的方法包括在基板（10）上形成栅极（11a）和第一布线的步骤，在重叠的位置形成具有接触孔的栅极绝缘膜（12a）的步骤所述第一互连，形成与所述栅电极（11a）重叠并分离的源电极（13a）和漏电极（13b）的步骤，以及经由所述接触孔与所述第一互连件连接的第二互连件，连续地形成氧化物半导体膜（14）和第二绝缘膜（15）的步骤，然后对第二绝缘膜（15）进行图案化以形成层间绝缘膜（15a），并且降低氧化物半导体膜（14）通过层间绝缘膜（15a）露出以形成像素电极（14b）。

4. 发明授权

US08481373B2 Method for manufacturing thin film transistor substrate 有权
标题翻译：薄膜晶体管基板的制造方法
公开(公告)号：US08481373B2
公开(公告)日：2013-07-09
申请号：US13383220
申请日：2010-03-16
申请人： Tohru Okabe , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara
发明人： Tohru Okabe , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/42384
摘要： A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming a source electrode (13a) and a drain electrode (13b) overlapping the gate electrode (11a) and separated apart from each other, and a second interconnect connected via the contact hole to the first interconnect, a step of successively forming an oxide semiconductor film (14) and a second insulating film (15), and thereafter, patterning the second insulating film (15) to form an interlayer insulating film (15a), and a step of reducing the resistance of the oxide semiconductor film (14) exposed through the interlayer insulating film (15a) to form a pixel electrode (14b).
摘要翻译：制造薄膜晶体管基板的方法包括在基板（10）上形成栅极（11a）和第一布线的步骤，在重叠的位置形成具有接触孔的栅极绝缘膜（12a）的步骤所述第一互连，形成与所述栅电极（11a）重叠并分离的源电极（13a）和漏电极（13b）的步骤，以及经由所述接触孔与所述第一互连件连接的第二互连件，连续地形成氧化物半导体膜（14）和第二绝缘膜（15）的步骤，然后对第二绝缘膜（15）进行图案化以形成层间绝缘膜（15a），并且降低氧化物半导体膜（14）通过层间绝缘膜（15a）露出以形成像素电极（14b）。

5. 发明授权

US08582072B2 Method for manufacturing display device and display device 有权
标题翻译：制造显示装置和显示装置的方法
公开(公告)号：US08582072B2
公开(公告)日：2013-11-12
申请号：US12933763
申请日：2009-03-03
申请人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
发明人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
IPC分类号： G02F1/1333
CPC分类号： B29D11/0073 , B32B37/0015 , B32B37/12 , B32B37/144 , B32B37/28 , B32B38/0008 , B32B43/006 , B32B2037/1253 , B32B2307/538 , B32B2307/734 , B32B2309/02 , B32B2309/027 , B32B2309/10 , B32B2310/0831 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , G02F1/1303 , G02F1/133305 , G02F2201/54
摘要： A method for manufacturing a display device 10 includes a substrate supporting step for supporting a plastic substrate 19 on a support substrate 50, with the plastic substrate 19 curved, and a thin film lamination step for laminating a plurality of thin films on the plastic substrate 19 supported on the support substrate 50.
摘要翻译：制造显示装置10的方法包括：基板支撑步骤，用于将塑料基板19支撑在支撑基板50上，塑料基板19弯曲;以及薄膜层叠步骤，用于在塑料基板19上层叠多个薄膜支撑在支撑基板50上。

6. 发明申请

US20130105802A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，显示装置和薄膜晶体管和显示装置的制造方法
公开(公告)号：US20130105802A1
公开(公告)日：2013-05-02
申请号：US13518566
申请日：2010-12-21
申请人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
发明人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
IPC分类号： H01L29/786 , H01L33/08 , H01L29/66
CPC分类号： H01L29/786 , H01L29/04 , H01L29/6675 , H01L29/66765 , H01L29/78609 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L33/08
摘要： The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor 100 according to the present invention has a gate electrode 12 formed on a substrate 10, an insulating layer 14 formed on the gate electrode 12, a microcrystalline amorphous silicon layer 18 and an amorphous silicon layer 16 that are formed on the insulating layer 14, a semiconductor layer 20 containing an impurity formed on the amorphous silicon layer 16, and a source electrode 22A and a drain electrode 22B that are formed on the semiconductor layer 20 containing an impurity. The microcrystalline amorphous silicon layer 18 and the semiconductor layer 20 containing an impurity are connected to each other through the amorphous silicon layer 16 without being in direct contact with each other.
摘要翻译：本发明的目的是提供一种通过有效的制造方法来减少OFF电流的产生的TFT。根据本发明的薄膜晶体管100具有形成在基板10上的栅电极12，形成在栅电极12上的绝缘层14，形成在绝缘层上的微晶非晶硅层18和非晶硅层16。层14，包含形成在非晶硅层16上的杂质的半导体层20以及形成在包含杂质的半导体层20上的源电极22A和漏极22B。含有杂质的微晶非晶硅层18和半导体层20通过非晶硅层16彼此连接而不直接接触。

7. 发明授权

US08530899B2 Thin film transistor, display device, and manufacturing method for thin film transistor and display device 有权
标题翻译：薄膜晶体管，显示装置及薄膜晶体管及显示装置的制造方法
公开(公告)号：US08530899B2
公开(公告)日：2013-09-10
申请号：US13518566
申请日：2010-12-21
申请人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
发明人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
IPC分类号： H01L29/04
CPC分类号： H01L29/786 , H01L29/04 , H01L29/6675 , H01L29/66765 , H01L29/78609 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L33/08
摘要： The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor 100 according to the present invention has a gate electrode 12 formed on a substrate 10, an insulating layer 14 formed on the gate electrode 12, a microcrystalline amorphous silicon layer 18 and an amorphous silicon layer 16 that are formed on the insulating layer 14, a semiconductor layer 20 containing an impurity formed on the amorphous silicon layer 16, and a source electrode 22A and a drain electrode 22B that are formed on the semiconductor layer 20 containing an impurity. The microcrystalline amorphous silicon layer 18 and the semiconductor layer 20 containing an impurity are connected to each other through the amorphous silicon layer 16 without being in direct contact with each other.
摘要翻译：本发明的目的是提供一种通过有效的制造方法来减少OFF电流的产生的TFT。根据本发明的薄膜晶体管100具有形成在基板10上的栅电极12，形成在栅电极12上的绝缘层14，形成在绝缘层上的微晶非晶硅层18和非晶硅层16。层14，包含形成在非晶硅层16上的杂质的半导体层20以及形成在包含杂质的半导体层20上的源电极22A和漏极22B。含有杂质的微晶非晶硅层18和半导体层20通过非晶硅层16彼此连接而不直接接触。

8. 发明申请

US20110007259A1 METHOD FOR MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE 有权
标题翻译：用于制造显示装置和显示装置的方法
公开(公告)号：US20110007259A1
公开(公告)日：2011-01-13
申请号：US12933763
申请日：2009-03-03
申请人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
发明人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
IPC分类号： G02F1/1333 , H01J9/26
CPC分类号： B29D11/0073 , B32B37/0015 , B32B37/12 , B32B37/144 , B32B37/28 , B32B38/0008 , B32B43/006 , B32B2037/1253 , B32B2307/538 , B32B2307/734 , B32B2309/02 , B32B2309/027 , B32B2309/10 , B32B2310/0831 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , G02F1/1303 , G02F1/133305 , G02F2201/54
摘要： A method for manufacturing a display device 10 includes a substrate supporting step for supporting a plastic substrate 19 on a support substrate 50, with the plastic substrate 19 curved, and a thin film lamination step for laminating a plurality of thin films on the plastic substrate 19 supported on the support substrate 50.
摘要翻译：制造显示装置10的方法包括：基板支撑步骤，用于将塑料基板19支撑在支撑基板50上，塑料基板19弯曲;以及薄膜层叠步骤，用于在塑料基板19上层叠多个薄膜支撑在支撑基板50上。

9. 发明授权

US08810765B2 Electroluminescence element 有权
标题翻译：电致发光元件
公开(公告)号：US08810765B2
公开(公告)日：2014-08-19
申请号：US12527731
申请日：2008-01-11
申请人： Tohru Okabe , Hirohiko Nishiki
发明人： Tohru Okabe , Hirohiko Nishiki
IPC分类号： G02F1/1339 , H05B33/04 , H01L51/52 , H01L27/32 , H05B33/22
CPC分类号： H05B33/22 , H01L27/3246 , H01L51/5237 , H01L51/525 , H01L51/5259 , H01L2251/5338 , H05B33/04
摘要： An electroluminescence element includes an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and divided by picture-element separating portions so as to correspond to unit picture elements; and a sealing substrate arranged to hermetically seal the light-emitting layer of the electroluminescence substrate. At least one of the electroluminescence substrate and the sealing substrate is a flexible substrate. Spacers are provided between the electroluminescence substrate and the sealing substrate.
摘要翻译：电致发光元件包括具有薄膜晶体管基板的电致发光基板和设置在薄膜晶体管基板上并由图像元素分离部分分割以对应于单位图像元素的发光层; 以及密封基板，其设置成气密地密封电致发光基板的发光层。电致发光基板和密封基板中的至少一个是柔性基板。在电致发光基板和密封基板之间设置隔板。

10. 发明授权

US08432096B2 Single-color EL element, single-color EL backlight, display device, and method for manufacturing single-color EL element 有权
标题翻译：单色EL元件，单色EL背光源，显示装置以及单色EL元件的制造方法
公开(公告)号：US08432096B2
公开(公告)日：2013-04-30
申请号：US12517618
申请日：2007-07-26
申请人： Yohsuke Kanzaki , Hirohiko Nishiki , Tohru Okabe
发明人： Yohsuke Kanzaki , Hirohiko Nishiki , Tohru Okabe
IPC分类号： H05B33/06
CPC分类号： H01J9/221 , H01L27/3288 , H01L2251/5361 , H01L2251/568
摘要： A single-color EL element includes a substrate; a plurality of signal wires arranged over the substrate; a plurality of pixel electrodes electrically coupled with a respective one of the plurality of signal wires via connecting wires to constitute a matrix as a whole, the plurality of pixel electrodes being separate from one another; and a single-color EL layer arranged over the plurality of pixel electrodes.
摘要翻译：单色EL元件包括基板; 布置在所述基板上的多个信号线; 多个像素电极，经由连接线与所述多个信号线中的相应一个电连接，以构成整体的矩阵，所述多个像素电极彼此分离; 以及布置在多个像素电极上的单色EL层。

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