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    • 10. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20110006339A1
    • 2011-01-13
    • US12828422
    • 2010-07-01
    • Kaoru UCHIDAKazuyuki SAWADAYuji HARADA
    • Kaoru UCHIDAKazuyuki SAWADAYuji HARADA
    • H01L29/739H01L21/331
    • H01L29/7393H01L29/063H01L29/66325
    • A lateral hybrid IGBT is provided including: a RESURF region which is an n-type dopant layer formed in a surface portion of a substrate 1 made of p-type Si; a base region which is a p-type dopant layer; an emitter/source region which is an n-type dopant layer with a high concentration; a collector region which is a p-type dopant layer with a low concentration and formed in the RESURF region; a drain region which is an n-type dopant layer with a high concentration and formed adjacent to the collector region but on another cross-section; a base connection region which is a p-type dopant layer with a high concentration; a gate insulator film; and a gate electrode, wherein the collector region is shallower than the drain region located on the other cross-section.
    • 提供一种横向混合IGBT,包括:RESURF区,其是在由p型Si制成的衬底1的表面部分中形成的n型掺杂剂层; 作为p型掺杂剂层的基极区域; 作为高浓度的n型掺杂剂层的发射极/源极区域; 作为在RESURF区域中形成的低浓度的p型掺杂剂层的集电极区域; 漏极区域,其是具有高浓度的n型掺杂剂层,并且形成在集电极区域附近但在另一截面上; 作为高浓度的p型掺杂剂层的基极连接区域; 栅极绝缘膜; 以及栅电极,其中所述集电极区域比位于另一截面上的漏极区域浅。