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1. 发明授权

US07801198B2 Surface emitting laser element and method of fabricating the same 失效
标题翻译：表面发射激光元件及其制造方法
公开(公告)号：US07801198B2
公开(公告)日：2010-09-21
申请号：US12057538
申请日：2008-03-28
申请人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
发明人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita , Keishi Takaki , Peter Nyakas
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/34306
摘要： A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror.
摘要翻译：表面发射激光器元件包括有源层和形成有多个具有不同折射率的电介质层的电介质多层反射镜，用于反射在有源层中产生的光。电介质层之间的边界中的至少一个形成为具有预定的表面粗糙度以获得电介质多层反射镜的所需目标反射率。

2. 发明申请

US20090310637A1 SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME 有权
标题翻译：表面发射激光元件及其制造方法
公开(公告)号：US20090310637A1
公开(公告)日：2009-12-17
申请号：US12056790
申请日：2008-03-27
申请人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita
发明人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18327 , H01S5/18341 , H01S5/18369 , H01S2301/18
摘要： A convex-portion forming layer is formed between a current-confinement aperture and a multilayer mirror, and forms a convex portion on each boundary between layers forming the multilayer mirror. The convex portion includes a plane equal to or larger than a spot size of the laser light, where the spot size is decided by a diameter of the current-confinement aperture, a predetermined diffraction angle of the laser light due to the current-confinement aperture, and a distance from the current-confinement aperture.
摘要翻译：在电流限制孔和多层反射镜之间形成凸部形成层，并且在形成多层反射镜的层之间的每个边界上形成凸部。凸部包括等于或大于激光的光斑尺寸的平面，其中光点尺寸由电流限制孔径的直径决定，由于电流限制孔径引起的激光的预定衍射角，距离电流限制孔径的距离。

3. 发明授权

US07881353B2 Surface emitting laser element array 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US07881353B2
公开(公告)日：2011-02-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

4. 发明授权

US07778297B2 Surface emitting laser element and method of fabricating the same 有权
标题翻译：表面发射激光元件及其制造方法
公开(公告)号：US07778297B2
公开(公告)日：2010-08-17
申请号：US12056790
申请日：2008-03-27
申请人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita
发明人： Takeo Kageyama , Norihiro Iwai , Yasumasa Kawakita
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18327 , H01S5/18341 , H01S5/18369 , H01S2301/18
摘要： A convex-portion forming layer is formed between a current-confinement aperture and a multilayer mirror, and forms a convex portion on each boundary between layers forming the multilayer mirror. The convex portion includes a plane equal to or larger than a spot size of the laser light, where the spot size is decided by a diameter of the current-confinement aperture, a predetermined diffraction angle of the laser light due to the current-confinement aperture, and a distance from the current-confinement aperture.
摘要翻译：在电流限制孔和多层反射镜之间形成凸部形成层，并且在形成多层反射镜的层之间的每个边界上形成凸部。凸部包括等于或大于激光的光斑尺寸的平面，其中光点尺寸由电流限制孔径的直径决定，由于电流限制孔径引起的激光的预定衍射角，距离电流限制孔径的距离。

5. 发明申请

US20090245312A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20090245312A1
公开(公告)日：2009-10-01
申请号：US12414610
申请日：2009-03-30
申请人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
发明人： Takeo Kageyama , Keishi Takaki , Naoki Tsukiji , Norihiro Iwai , Hitoshzi Shimizu , Yasumasa Kawakita , Suguru Imai
IPC分类号： H01S5/183 , H01S5/00
CPC分类号： H01S5/423 , H01S5/0422 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/3054
摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
摘要翻译：提供了一种低成本，高可靠性的表面发射激光元件阵列。表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层，发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。第一导电类型半导体层区域布置在衬底和有源层之间。表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

6. 发明授权

US08300671B2 Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：US08300671B2
公开(公告)日：2012-10-30
申请号：US13176921
申请日：2011-07-06
申请人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
发明人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/02208 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18322 , H01S5/18369 , H01S2304/04
摘要： A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要翻译：表面发射激光器包括形成在III-V族化合物衬底上的空腔区域，该腔体区域包括有源层和具有氧化铝化合物的电流限制层，并限制电流通过该电流通路流入有源层，形成在基板上的上DBR镜和下DBR镜，夹着腔区，以及设置成接触电流限制层的渐变组成层，其具有与当前限制层距离单调减小的铝组成比增加渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层，并且其铝组成比的变化率大于第一区域的变化率。梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。

7. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

8. 发明授权

US08472492B2 Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module 有权
标题翻译：垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
公开(公告)号：US08472492B2
公开(公告)日：2013-06-25
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

9. 发明授权

US08031754B2 Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element 有权
标题翻译：表面发射激光元件，表面发射激光元件阵列，制造表面发射激光元件的方法
公开(公告)号：US08031754B2
公开(公告)日：2011-10-04
申请号：US12108931
申请日：2008-04-24
申请人： Norihiro Iwai , Takeo Kageyama , Kinuka Tanabe
发明人： Norihiro Iwai , Takeo Kageyama , Kinuka Tanabe
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： A surface emitting laser element that includes a cylindrical mesa post in which a plurality of semiconductor layers including an active layer is grown and that emits a laser light in a direction perpendicular to a substrate surface, the surface emitting laser element including a dielectric multilayer film on a top surface of the mesa post in at least a portion over a current injection area of the active layer; and a dielectric portion that includes layers fewer than layers of the dielectric multilayer film and that is arranged on a portion excluding the portion over the current injection area on the top surface of the mesa post and on at least part of a side surface of the mesa post.
摘要翻译：一种表面发射激光器元件，其包括圆柱形台面柱，其中包括有源层的多个半导体层生长并且沿垂直于衬底表面的方向发射激光，所述表面发射激光器元件包括介电多层膜在活性层的电流注入区域的至少一部分中的台面柱的顶表面; 以及电介质部分，其包括比所述电介质多层膜低的层的层，并且布置在除了台面顶表面上的电流注入区域上的部分之外的部分和台面的至少一部分侧表面帖子

10. 发明申请

US20110003403A1 TESTING METHOD OF SURFACE-EMITTING LASER DEVICE AND TESTING DEVICE THEREOF 有权
标题翻译：表面发射激光器件的测试方法及其测试装置
公开(公告)号：US20110003403A1
公开(公告)日：2011-01-06
申请号：US12796225
申请日：2010-06-08
申请人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01L21/66 , G01J1/00 , G01N21/01
CPC分类号： G01J1/4228 , G01J2001/4247 , H01S5/0021 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/423
摘要： A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
摘要翻译：对形成在晶片上的多个表面发射激光器件执行晶片级老化测试的方法包括：使与多个表面发射激光器件相同的平面上布置的多个接触电极相同，彼此电连接以分别与表面发射激光器件的焊盘电极接触，并且向表面发射激光器件和接触电极的第二电极施加电流。在以预定温度加热晶片的同时进行晶片级老化测试。在晶片级老化测试期间，监测从表面发射激光器件发射的激光。

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