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    • 2. 发明授权
    • Surface emitting laser
    • 表面发射激光
    • US08300671B2
    • 2012-10-30
    • US13176921
    • 2011-07-06
    • Yasumasa KawakitaHitoshi ShimizuTakeo Kageyama
    • Yasumasa KawakitaHitoshi ShimizuTakeo Kageyama
    • H01S5/00
    • H01S5/18311H01S5/02208H01S5/02284H01S5/02288H01S5/0425H01S5/18322H01S5/18369H01S2304/04
    • A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
    • 表面发射激光器包括形成在III-V族化合物衬底上的空腔区域,该腔体区域包括有源层和具有氧化铝化合物的电流限制层,并限制电流通过该电流通路流入有源层 ,形成在基板上的上DBR镜和下DBR镜,夹着腔区,以及设置成接触电流限制层的渐变组成层,其具有与当前限制层距离单调减小的铝组成比 增加 渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层,并且其铝组成比的变化率大于第一区域的变化率。 梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。
    • 4. 发明授权
    • Surface emitting laser element array
    • 表面发射激光元件阵列
    • US07881353B2
    • 2011-02-01
    • US12414610
    • 2009-03-30
    • Takeo KageyamaKeishi TakakiNaoki TsukijiNorihiro IwaiHitoshzi ShimizuYasumasa KawakitaSuguru Imai
    • Takeo KageyamaKeishi TakakiNaoki TsukijiNorihiro IwaiHitoshzi ShimizuYasumasa KawakitaSuguru Imai
    • H01S5/00
    • H01S5/423H01S5/0422H01S5/18311H01S5/18341H01S5/18369H01S5/3054
    • Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
    • 提供了一种低成本,高可靠性的表面发射激光元件阵列。 表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件,每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层, 发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。 第一导电类型半导体层区域布置在衬底和有源层之间。 表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。
    • 6. 发明申请
    • SURFACE EMITTING LASER ELEMENT ARRAY
    • 表面发射激光元件阵列
    • US20090245312A1
    • 2009-10-01
    • US12414610
    • 2009-03-30
    • Takeo KageyamaKeishi TakakiNaoki TsukijiNorihiro IwaiHitoshzi ShimizuYasumasa KawakitaSuguru Imai
    • Takeo KageyamaKeishi TakakiNaoki TsukijiNorihiro IwaiHitoshzi ShimizuYasumasa KawakitaSuguru Imai
    • H01S5/183H01S5/00
    • H01S5/423H01S5/0422H01S5/18311H01S5/18341H01S5/18369H01S5/3054
    • Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.
    • 提供了一种低成本,高可靠性的表面发射激光元件阵列。 表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件,每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层, 发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。 第一导电类型半导体层区域布置在衬底和有源层之间。 表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。
    • 10. 发明授权
    • Surface emitting laser, light source, and optical module
    • 表面发射激光,光源和光学模块
    • US08755422B2
    • 2014-06-17
    • US13187838
    • 2011-07-21
    • Hitoshi ShimizuYasumasa Kawakita
    • Hitoshi ShimizuYasumasa Kawakita
    • H01S5/183
    • H01S5/18311G02B6/4214H01S5/02292H01S5/18341H01S5/18347H01S5/18358H01S5/18369H01S5/3054H01S5/3215
    • A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.
    • 表面发射激光器包括下层和上层多层反射镜,形成在下层和上层多层反射镜之间的第一导电型和第二导电型接触层,形成在第一导电型和第二导电型之间的有源层 型接触层,形成在第二导电型接触层和有源层之间的电流限制层以及横跨电流限制层彼此形成的第一和第二组成梯度层。 形成第一组成梯度层和第二组成梯度层,使得每个层的带隙能量从电流限制层单调减小到相邻层,并且在生长方向上接近相邻层的带隙能量。