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1. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

2. 发明授权

US08472492B2 Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module 有权
标题翻译：垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
公开(公告)号：US08472492B2
公开(公告)日：2013-06-25
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

3. 发明授权

US08300671B2 Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：US08300671B2
公开(公告)日：2012-10-30
申请号：US13176921
申请日：2011-07-06
申请人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
发明人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/02208 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18322 , H01S5/18369 , H01S2304/04
摘要： A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要翻译：表面发射激光器包括形成在III-V族化合物衬底上的空腔区域，该腔体区域包括有源层和具有氧化铝化合物的电流限制层，并限制电流通过该电流通路流入有源层，形成在基板上的上DBR镜和下DBR镜，夹着腔区，以及设置成接触电流限制层的渐变组成层，其具有与当前限制层距离单调减小的铝组成比增加渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层，并且其铝组成比的变化率大于第一区域的变化率。梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。

4. 发明授权

US09300114B2 Laser device, method of manufacturing the same, laser device array, light source and light module 有权
标题翻译：激光装置及其制造方法，激光装置阵列，光源和光模块
公开(公告)号：US09300114B2
公开(公告)日：2016-03-29
申请号：US13435061
申请日：2012-03-30
申请人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
发明人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
IPC分类号： G02B6/12 , H01S5/183 , B82Y20/00 , H01S5/00 , H01S5/343 , H01S5/42
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0021 , H01S5/18333 , H01S5/18358 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.
摘要翻译：提供了一种激光器件，其包括衬底，有源层和电流限制层。电流限制层包括从平行于衬底表面的平行平面中的电流限制层边缘形成的氧化物层沿着平行平面向电流限制层的中心延伸，并且不具有所述边缘和形成在所述中心附近的尖端部分之间的拐点或在所述边缘和所述尖端部分之间形成有多个拐点。

5. 发明授权

US08755422B2 Surface emitting laser, light source, and optical module 有权
标题翻译：表面发射激光，光源和光学模块
公开(公告)号：US08755422B2
公开(公告)日：2014-06-17
申请号：US13187838
申请日：2011-07-21
申请人： Hitoshi Shimizu , Yasumasa Kawakita
发明人： Hitoshi Shimizu , Yasumasa Kawakita
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , G02B6/4214 , H01S5/02292 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3054 , H01S5/3215
摘要： A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.
摘要翻译：表面发射激光器包括下层和上层多层反射镜，形成在下层和上层多层反射镜之间的第一导电型和第二导电型接触层，形成在第一导电型和第二导电型之间的有源层型接触层，形成在第二导电型接触层和有源层之间的电流限制层以及横跨电流限制层彼此形成的第一和第二组成梯度层。形成第一组成梯度层和第二组成梯度层，使得每个层的带隙能量从电流限制层单调减小到相邻层，并且在生长方向上接近相邻层的带隙能量。

6. 发明授权

US08355421B2 Vertical-cavity surface emitting laser 失效
标题翻译：垂直腔表面发射激光
公开(公告)号：US08355421B2
公开(公告)日：2013-01-15
申请号：US12560875
申请日：2009-09-16
申请人： Yasumasa Kawakita , Kageyama Takeo , Hitoshi Shimizu
发明人： Yasumasa Kawakita , Kageyama Takeo , Hitoshi Shimizu
IPC分类号： H01S5/10 , H01S5/183 , H01S5/323
CPC分类号： H01S5/18311 , H01S5/0207 , H01S5/3201 , H01S5/32366
摘要： A vertical cavity surface emitting laser element as described herein can suppress of any dislocation, when a distributed Bragg reflector (DBR) mirror is formed on the onto a substrate (1). The vertical cavity surface emitting laser can be designed so that an average of strain in the DBR mirror (2) and a layer thickness of the DBR mirror (2) are in reference to a curvature of the substrate (1) in order to satisfy a predetermined condition, and then nitrogen can be added into the DBR mirror (2) with a composition that corresponds to a designed average of strain in the DBR mirror (2). For example, the average composition of nitrogen can be designed to be between 0.028% and 0.390%.
摘要翻译：当分布式布拉格反射镜（DBR）反射镜形成在基板（1）上时，如本文所述的垂直腔表面发射激光器元件可以抑制任何位错。可以设计垂直腔表面发射激光器，使得DBR反射镜（2）中的应变平均值和DBR反射镜（2）的层厚度参考基板（1）的曲率，以满足预定条件，然后氮气可以以对应于DBR反射镜（2）中设计的应变平均值的组成添加到DBR反射镜（2）中。例如，氮的平均组成可以设计在0.028％和0.390％之间。

7. 发明申请

US20110064107A1 VERTICAL-CAVITY SURFACE EMITTING LASER 失效
标题翻译：垂直表面发射激光
公开(公告)号：US20110064107A1
公开(公告)日：2011-03-17
申请号：US12560875
申请日：2009-09-16
申请人： Yasumasa Kawakita , Kageyama Takeo , Hitoshi Shimizu
发明人： Yasumasa Kawakita , Kageyama Takeo , Hitoshi Shimizu
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/0207 , H01S5/3201 , H01S5/32366
摘要： By making use of a vertical cavity surface emitting laser element (100) in accordance with the present invention, it becomes able to suppress as properly an occurrence of any dislocation therein even in a case where there is formed a DBR mirror onto a substrate (1), by designing to be set for between an average of strain in a DBR mirror at the lower side thereof (2) and a layer thickness of such the DBR mirror at the lower side thereof (2) in reference to a curvature of the substrate (1) in order to be satisfied a predetermined condition, and then by performing an addition of nitrogen into the DBR mirror at the lower side thereof (2) with a composition thereof that corresponds to the designed average of strain in the DBR mirror at the lower side thereof (2) to be set therefor, such as the composition of between 0.028% and 0.390% or the like, in reference to the relationship of between the average of strain in the DBR mirror at the lower side thereof (2) and an average of the composition of the nitrogen that is included in the DBR mirror at the lower side thereof (2).
摘要翻译：通过利用根据本发明的垂直腔表面发射激光元件（100），即使在在基板上形成DBR镜的情况下，也能适当地抑制其中任何位错的发生），通过设计设定为在其下侧（2）的DBR镜中的应变平均值与其下侧（2）处的DBR镜的层厚相对于基板的曲率（1），以便满足预定条件，然后通过在其下侧（2）向其DBR反射镜的下侧（2）添加氮气，其组成与对应于DBR反射镜中的设计的应变平均值相应其设定的下侧（2），例如组成为0.028〜0.390％等，参照其下侧（2）的DBR镜的应变平均值与平均的组合 n包含在其下侧的DBR反射镜中的氮（2）。

8. 发明授权

US08488644B2 Semiconductor laser element and manufacturing method thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08488644B2
公开(公告)日：2013-07-16
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

9. 发明申请

US20110261852A1 SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110261852A1
公开(公告)日：2011-10-27
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/10 , H01L33/20 , B82Y20/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

10. 发明申请

US20110274131A1 TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE 审中-公开
标题翻译：二维表面发射激光阵列元件，表面发射激光器件和光源
公开(公告)号：US20110274131A1
公开(公告)日：2011-11-10
申请号：US13142996
申请日：2010-01-20
申请人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
发明人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
IPC分类号： H01S5/42
CPC分类号： H01S5/423 , H01S5/02284 , H01S5/0422 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2214 , H01S5/4018
摘要： Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same.
摘要翻译：包括多个表面发射激光器元件，每个表面发射激光器元件包括衬底; 形成在基板上并由高折射率层和低折射率层的周期性结构形成的下多层反射镜和上多层反射镜; 设置在所述下多层反射镜和所述上多层反射镜之间的有源层; 位于有源层和下多层反射镜之间的下接触层，并延伸到上多层反射镜的外周侧; 形成在下接触层延伸的部分的表面上的下电极; 以及用于向有源层注入电流的上电极，其中所述表面发射激光元件彼此串联电连接以形成串联连接的元件阵列。这允许提供能够以简单结构实现高能量转换效率且能够高集成度的二维表面发射激光器阵列元件，以及使用该二维表面发射激光器阵列元件的光源。

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