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    • 2. 发明授权
    • Photovoltaic cell
    • 光伏电池
    • US4680607A
    • 1987-07-14
    • US730670
    • 1985-05-03
    • Takeo FukatsuMasaru TakeuchiKazuyuki Goto
    • Takeo FukatsuMasaru TakeuchiKazuyuki Goto
    • H01L31/032H01L31/075H01L31/20H01L27/14
    • H01L31/202H01L31/032H01L31/075Y02E10/548Y02P70/521
    • A photovoltaic cell in accordance with the present invention comprises a transparent substrate, a transparent first electrode layer on the substrate and a first semiconductor layer of P type on the first electrode layer, the first semiconductor layer being approximately 25 to 300 .ANG. in thickness and having activation energy of less than 0.3 eV for generation of positive holes. The above stated cell further comprises a second semiconductor layer of the same conductivity type on the first semiconductor layer, the second semiconductor layer being approximately 100 to 1000 .ANG. in thickness and having activation energy of more than 0.3 eV for generation of positive holes. The above stated cell further comprises a third semiconductor layer of I type on the second semiconductor layer, a fourth semiconductor layer of N type on the third semiconductor layer and a second electrode layer on the fourth semiconductor layer.
    • 根据本发明的光伏电池包括透明基板,基板上的透明第一电极层和第一电极层上的P型第一半导体层,第一半导体层的厚度约为25至300埃,并具有 活性能小于0.3 eV,用于产生空穴。 上述单元还包括在第一半导体层上具有相同导电类型的第二半导体层,第二半导体层的厚度大约为100至1000,并且具有大于0.3eV的激活能用于产生空穴。 上述单元还包括第二半导体层上的I型第三半导体层,第三半导体层上的N型第四半导体层和第四半导体层上的第二电极层。
    • 5. 发明授权
    • Electrostatic latent image forming apparatus
    • 静电潜像形成装置
    • US4914457A
    • 1990-04-03
    • US168170
    • 1988-03-15
    • Takeo FukatsuKazuyuki GotohMasaru TakeuchiKenichiro WakizakaKazuhiko HonmaShoichi NakanoYukinori Kuwano
    • Takeo FukatsuKazuyuki GotohMasaru TakeuchiKenichiro WakizakaKazuhiko HonmaShoichi NakanoYukinori Kuwano
    • B41J2/39B41J2/40B41J2/44G03G15/04G03G15/05H04N1/113H04N1/193H04N1/29
    • H04N1/193G03G15/05H04N1/1135H04N1/29
    • An electrostatic latent image forming apparatus includes a dielectric drum (10) a surface of which is uniformly charged in a predetermined polarity by a charging corotron (16). A recording head (18) includes a transparent base plate (30), a transparent electrode (32) and a photoconductive layer (34) composed of an amorphous silicon are formed on the transparent base plate in this order. A plurality of discharging electrodes (36) are formed on the photoconductive layer. A bias voltage (46) having a reverse polarity of the charged polarity being charging by the charging corotron is applied. When a light signal in accordance with an image to be formed is entered on the back surface of the transparent base plate, carriers, that is, holes and electrons are generated in the photoconductive layer, the carrier having the same polarity as the bias voltage is discharged onto the dielectric drum through the discharging electrodes. Electric charges are removed or reduced at a portion on the dielectric drum where such discharge occurs, and therefore an electrostatic latent image in accordance with the light signal being entered is formed on the dielectric drum.
    • 静电潜像形成装置包括介质鼓(10),其表面通过充电旋转体(16)以预定的极性均匀地充电。 在透明基板上依次形成记录头(18),透明基板(30),透明电极(32)和由非晶硅组成的光电导层(34)。 在光电导层上形成多个放电电极(36)。 施加具有充电极性的相反极性的偏置电压(46),由充电电晕器进行充电。 当根据要形成的图像的光信号进入透明基板的背面时,在光电导层中产生载流子,即空穴和电子,具有与偏置电压相同极性的载体是 通过放电电极放置到介质鼓上。 在介质鼓上发生这种放电的部分去除或减少电荷,因此在介质鼓上形成根据正在进入的光信号的静电潜像。
    • 6. 发明授权
    • Electrostatic recording apparatus
    • 静电记录装置
    • US4841328A
    • 1989-06-20
    • US893099
    • 1986-08-04
    • Masaru TakeuchiTakeo FukatsuShoichi NakanoYukinori KuwanoKoji MinamiMasayuki Iwamoto
    • Masaru TakeuchiTakeo FukatsuShoichi NakanoYukinori KuwanoKoji MinamiMasayuki Iwamoto
    • G03G5/082G03G13/04G03G21/08
    • G03G5/08221G03G13/04G03G21/08
    • An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.
    • 静电记录装置包括感光鼓。 感光鼓包括在支撑体上形成的非晶硅本体层,并且在本体层中,在支撑侧形成第一层区域,在表面侧形成第二层区域。 第一层区域以包含0.01-40原子%的氢,0.1-40原子%的氧和5×10-6-1.0原子%的硼的方式形成。 另一方面,实际上在第二层区域中氧和硼不被掺杂,并且在该非掺杂的第二层区域中抑制了载流子阱的产生。 此外,从曝光用光源和放电用光源照射到感光鼓上的光的峰值波长设定为短于650nm,优选短于600nm。 短于650nm的短波长的光在第二层区域中几乎被吸收,并且第一层区域中的载流子的生成小,从而抑制陷阱中的载流子的捕获。
    • 10. 发明授权
    • Photovoltaic device
    • 光伏装置
    • US4689438A
    • 1987-08-25
    • US787987
    • 1985-10-16
    • Takeo FukatsuMasaru TakeuchiKazuyuki Gotoh
    • Takeo FukatsuMasaru TakeuchiKazuyuki Gotoh
    • H01L31/0236H01L31/075H01L31/18H01L31/06
    • H01L31/075H01L31/0236H01L31/18Y02E10/548
    • The photovoltaic device of this invention has a p-type layer of oxides of the platinum group between a transparent electrode layer texturized at the side opposite the light incident surface and a semiconductive layer having a semiconductor junction and including a p-type layer at the light incident side thereof.With such a construction, the optical path length of an incident ray is increased, thereby improving the photoelectric conversion efficiency. Also, since the p-type semiconductive layer contacts the p-type layer of oxides of the platinum group, imperfections in the semiconductor junction can be reduced. Accordingly, with a photovoltaic device of this invention, the peak value of the photoelectric conversion efficiency can be increased and also the manufacturing yield can be remarkably increased.
    • 本发明的光电器件在与光入射表面相反一侧纹理化的透明电极层和具有半导体结的半导电层之间具有铂族氧化物的p型层,并且在光线处包括p型层 事件侧。 通过这样的结构,入射光线的光程长度增加,从而提高光电转换效率。 此外,由于p型半导体层与铂族的p型氧化物层接触,所以可以减少半导体结中的缺陷。 因此,利用本发明的光电器件,可以提高光电转换效率的峰值,并且可以显着提高制造产量。