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    • 6. 发明授权
    • Photovoltaic cell
    • 光伏电池
    • US4680607A
    • 1987-07-14
    • US730670
    • 1985-05-03
    • Takeo FukatsuMasaru TakeuchiKazuyuki Goto
    • Takeo FukatsuMasaru TakeuchiKazuyuki Goto
    • H01L31/032H01L31/075H01L31/20H01L27/14
    • H01L31/202H01L31/032H01L31/075Y02E10/548Y02P70/521
    • A photovoltaic cell in accordance with the present invention comprises a transparent substrate, a transparent first electrode layer on the substrate and a first semiconductor layer of P type on the first electrode layer, the first semiconductor layer being approximately 25 to 300 .ANG. in thickness and having activation energy of less than 0.3 eV for generation of positive holes. The above stated cell further comprises a second semiconductor layer of the same conductivity type on the first semiconductor layer, the second semiconductor layer being approximately 100 to 1000 .ANG. in thickness and having activation energy of more than 0.3 eV for generation of positive holes. The above stated cell further comprises a third semiconductor layer of I type on the second semiconductor layer, a fourth semiconductor layer of N type on the third semiconductor layer and a second electrode layer on the fourth semiconductor layer.
    • 根据本发明的光伏电池包括透明基板,基板上的透明第一电极层和第一电极层上的P型第一半导体层,第一半导体层的厚度约为25至300埃,并具有 活性能小于0.3 eV,用于产生空穴。 上述单元还包括在第一半导体层上具有相同导电类型的第二半导体层,第二半导体层的厚度大约为100至1000,并且具有大于0.3eV的激活能用于产生空穴。 上述单元还包括第二半导体层上的I型第三半导体层,第三半导体层上的N型第四半导体层和第四半导体层上的第二电极层。