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1. 发明授权

US06532107B2 Optical amplifier, light source module and optical system 有权
公开(公告)号：US06532107B2
公开(公告)日：2003-03-11
申请号：US09895256
申请日：2001-07-02
申请人： Takeharu Yamaguchi , Hideo Aoyagi , Toshiaki Tsuda , Yuichiro Irie , Etsuji Katayama , Takeo Shimizu
发明人： Takeharu Yamaguchi , Hideo Aoyagi , Toshiaki Tsuda , Yuichiro Irie , Etsuji Katayama , Takeo Shimizu
IPC分类号： H01S300
CPC分类号： H01S3/094003 , H01S3/0941
摘要： An optical amplifier of the present invention comprises a pumping light source configured to output a pumping light, an amplifier unit configured to receive the pumping light from said pumping light source and amplify an optical signal that passes therethrough, and an optical fiber disposed between said pumping light source and said amplifier unit, said optical fiber including an optical filter that is configured to attenuate the optical signal from said amplifier unit.

2. 发明授权

US06683902B1 Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：US06683902B1
公开(公告)日：2004-01-27
申请号：US09662118
申请日：2000-09-14
申请人： Yutaka Ohki , Takeharu Yamaguchi , Yuichiro Irie
发明人： Yutaka Ohki , Takeharu Yamaguchi , Yuichiro Irie
IPC分类号： H01S308
CPC分类号： G02B6/4216 , G02B6/421 , H01S5/146
摘要： The present invention provides a semiconductor laser module. A semiconductor laser module (1A) comprising a semiconductor laser element (2a) and an optical fiber (3a) optically coupled by an optical coupling means (2b) is provided, wherein on the optical fiber (3a), a reflective portion (4) and a birefringence fiber (3a) are provided, the birefringence fiber (3a) is provided at least from the incident end on the side of the optical coupling means (2b) to immediately before the reflective portion (4), a connection portion (6) is provided at least at one point in the longitudinal direction of the birefringence fiber (3a), and in the connection portion (6), two eigen axes of X axes and Y axes are connected so that the eigen axes intersect each other at an established angle &thgr;.
摘要翻译：本发明提供一种半导体激光器模块。提供一种包括半导体激光元件（2a）和通过光耦合装置（2b）光耦合的光纤（3a）的半导体激光器模块（1A），其中在光纤（3a）上，反射部分（4）和双折射纤维（3a），双折射纤维（3a）至少从光耦合装置（2b）侧的入射端到反射部分（4）之前至少设置有连接部分（6））至少在双折射纤维（3a）的纵向方向的一个点处设置，并且在连接部分（6）中，X轴和Y轴的两个本征轴被连接，使得本征轴线彼此相交建立角度θ。

3. 发明授权

US06524016B1 Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：US06524016B1
公开(公告)日：2003-02-25
申请号：US09667825
申请日：2000-09-22
申请人： Yutaka Ohki , Takeharu Yamaguchi , Yuichiro Irie
发明人： Yutaka Ohki , Takeharu Yamaguchi , Yuichiro Irie
IPC分类号： G02B636
CPC分类号： H01S5/146 , H01S3/0826 , H01S5/02216 , H01S5/02284 , H01S5/1215
摘要： A semiconductor laser module comprises a semiconductor laser having a front end facet from which output light is emitted, and an optical fiber on which the output light emitted from the semiconductor laser is incident, where the optical fiber has a light feedback portion for reflecting light at a predetermined wavelength. The semiconductor laser is accommodated in a package together with one end side of the optical fiber. The light feedback portion includes a first light feedback portion set at a predetermined reflection center wavelength for determining an oscillating wavelength of the semiconductor laser, and at least one second light feedback portion.
摘要翻译：半导体激光器模块包括具有从其输出光的前端小面的半导体激光器和从半导体激光器发射的输出光入射的光纤，其中光纤具有用于反射光的光反馈部分预定波长。半导体激光器与光纤的一端侧一起容纳在封装中。光反馈部分包括以预定的反射中心波长设置的用于确定半导体激光器的振荡波长的第一光反馈部分和至少一个第二光反馈部分。

4. 发明授权

US06738405B1 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06738405B1
公开(公告)日：2004-05-18
申请号：US09889596
申请日：2001-07-16
申请人： Takeharu Yamaguchi , Toshikazu Mukaihara , Akihiko Kasukawa
发明人： Takeharu Yamaguchi , Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0211 , H01S5/0212 , H01S5/0421 , H01S5/0425 , H01S5/2022 , H01S5/2216 , H01S5/34313
摘要： A semiconductor laser device (30) includes a layered structure formed on an n-type GaAs substrate (32) having a bandgap energy Eg1 and including an n-type AlGaAs cladding layer (34), an active layer (36) including a quantum-well structure of two layers InGaAs/GaAs having a bandgap energy Eg2 which is smaller than Eg1, a p-type AlGaAs cladding layer (38), and a p-type GaAs cap layer (40), which are consecutively epitaxially grown. The cap layer and the upper portion of the p-type cladding layer are formed as a stripe-shaped mesa structure. An SiN passivation film (42) is formed on the areas except for the top of the cap layer. On the exposed cap layer and the passivation layer a p-side electrode (44) is formed. On the bottom surface of the substrate an n-side electrode (46) including layered metal films of In/AuGe/Ni/Au is formed. An absorption medium layer is interposed between the GaAs substrate and the n-side electrode.
摘要翻译：半导体激光装置（30）包括形成在具有带隙能量Eg1并且包括n型AlGaAs包层（34）的n型GaAs衬底（32）上的分层结构，包括量子阱的有源层（36）具有小于Eg1的带隙能量Eg2，p型AlGaAs覆层（38）和p型GaAs覆盖层（40）的两层InGaAs / GaAs的阱结构，其被连续地外延生长。覆盖层和p型覆层的上部形成为条状台面结构。在除了盖层的顶部之外的区域上形成SiN钝化膜（42）。在露出的盖层和钝化层上形成p侧电极（44）。在基板的底面形成有包含In / AuGe / Ni / Au的层叠金属膜的n侧电极（46）。吸收介质层介于GaAs衬底和n侧电极之间。

5. 发明授权

US06821798B2 Semiconductor optical device and method for fabricating same 失效
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US06821798B2
公开(公告)日：2004-11-23
申请号：US10044990
申请日：2002-01-15
申请人： Satoshi Arakawa , Tatsuto Kurobe , Nariaki Ikeda , Takeharu Yamaguchi
发明人： Satoshi Arakawa , Tatsuto Kurobe , Nariaki Ikeda , Takeharu Yamaguchi
IPC分类号： H01L2100
CPC分类号： H01S5/0265
摘要： A monolithic semiconductor optical device with excellent temperature and modulation characteristics and associated method of manufacturing whereby the device has a semiconductor substrate, a semi-insulating buried heterostructure GaInAsP-based DFB laser; and either a buried ridge type AlGaInAs-based EA or a self aligned structure (SAS) AlGaInAs-based EA modulator.
摘要翻译：具有优异的温度和调制特性的单片半导体光学器件及相关的制造方法，其中器件具有半导体衬底，半绝缘掩埋异质结构GaInAsP基DFB激光器; 以及基于埋地脊型AlGaInAs的EA或基于AlGaInAs的自调整结构的EA调制器。

6. 发明授权

US06545296B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06545296B1
公开(公告)日：2003-04-08
申请号：US09512245
申请日：2000-02-24
申请人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/22 , H01S5/34313 , H01S5/34353 , H01S2301/02
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer having band gap energy smaller than that of the active layer, and the bottom surface of the semiconductor substrate opposite to the active layer is a photo diffused reflection surface having unevenness. The unevenness reduces an amount of reflection rays to enable the stable operation.
摘要翻译：一种半导体发光器件，包括半导体衬底和具有小于活性层的带隙能量的有源层，并且与有源层相对的半导体衬底的底表面是具有不均匀性的光漫反射面。不均匀性减少了反射光线的量以使得稳定的操作。

7. 发明授权

US6115116A Waveguide-type variable-sensitivity semiconductor photodetector 有权
标题翻译：波导型可变敏感半导体光电探测器
公开(公告)号：US6115116A
公开(公告)日：2000-09-05
申请号：US134344
申请日：1998-08-14
申请人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
发明人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
IPC分类号： H01L31/00 , H01L31/0232 , H01S5/00 , H01S5/026 , H01S5/323
CPC分类号： H01L31/0232
摘要： A waveguide-type variable-sensitivity semiconductor photodetector has a waveguide photodetector area and an optical attenuation area formed on an n-InP substrate. The optical attenuation area includes a GaInAs optical waveguide layer having a bandgap energy of 0.85 eV, a pair of upper and lower cladding layers each having a bandgap energy of 1.35 eV and an intermediate layer disposed at the heterojunction interface between the optical waveguide layer and the upper cladding layer and having a bandgap energy of 1.0 eV. A pile-up of halls at the heterojunction interface is prevented by the intermediate layer to improve the linearity of the output optical signal to the input optical signal.
摘要翻译：波导型可变灵敏度半导体光电检测器具有在n-InP衬底上形成的波导光电检测器区域和光学衰减区域。光衰减区域包括具有0.85eV的带隙能量的GaInAs光波导层，一对具有1.35eV的带隙能量的上下包层，以及设置在光波导层与光波导层之间的异质结界面处的中间层上覆层，具有1.0eV的带隙能。通过中间层防止异质结界面处的堆叠堆叠，以提高输出光信号对输入光信号的线性。

8. 发明授权

US07443081B2 Multi-frequency transmission/reception apparatus 有权
标题翻译：多频发送接收装置
公开(公告)号：US07443081B2
公开(公告)日：2008-10-28
申请号：US10471700
申请日：2002-04-11
申请人： Kazuhiko Kamei , Ryouichi Suetoshi , Takeharu Yamaguchi
发明人： Kazuhiko Kamei , Ryouichi Suetoshi , Takeharu Yamaguchi
IPC分类号： H01L41/08
CPC分类号： B06B1/0622 , B06B1/06 , B06B2201/74 , G01S7/521 , G01S15/96
摘要： The invention provides a multi-frequency transducer capable of obtaining desired directivity regardless of frequencies. Parallelepiped-shaped transducer elements (1) are used as transducer elements and a plurality of such transducer elements (1) are arranged in an array. The transducer elements (1) are caused to resonate using a resonant frequency in fundamental vibration mode and a resonant frequency in harmonic vibration mode determined by the dimensions (A, B) of a short edge (1a) and a long edge (1b) perpendicular to a longitudinal edge (1c) of each transducer element (1) to transmit and receive at multiple frequencies. The angle of directivity (θ) of the transducer elements is controlled by the dimension (C) of the longitudinal edge which is set to a value which does not affect resonance in either the fundamental vibration mode or the harmonic vibration mode.
摘要翻译：本发明提供一种能够获得所需方向性而不考虑频率的多频换能器。使用平行六面体形状的换能器元件（1）作为换能器元件，并且将多个这样的换能器元件（1）排列成阵列。使用基本振动模式的谐振频率和由短边（1a）和长边（1b）的尺寸（A，B）确定的谐波振动模式的谐振频率使换能器元件（1）谐振）垂直于每个换能器元件（1）的纵向边缘（1c）以在多个频率处发送和接收。换能器元件的方位角（θ）由纵向边缘的尺寸（C）控制，纵向边缘的尺寸被设定为不影响基本振动模式或谐波振动模式中的谐振的值。

9. 发明授权

US06810063B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06810063B1
公开(公告)日：2004-10-26
申请号：US09513702
申请日：2000-02-25
申请人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
IPC分类号： H01S308
CPC分类号： H01S5/10 , H01S5/0287 , H01S5/1039 , H01S5/2004 , H01S5/323 , H01S5/3235 , H01S5/3428 , H01S2301/16
摘要： A semiconductor laser device according to the present invention comprises a laminated structure of a semiconductor material including an active layer formed of a quantum well structure, a low-reflection film formed on one end face of the structure, and a high-reflection film formed on the other end face of the structure. The cavity length (L) of the device is 1,200 &mgr;m or more. This laser device, which enjoys high kink currents and a satisfactorily linear current-optical output characteristic, is a useful pumping light source for optical fiber amplifier.
摘要翻译：根据本发明的半导体激光器件包括半导体材料的层叠结构，该半导体材料包括由量子阱结构形成的有源层，形成在该结构的一个端面上的低反射膜和形成在该结构的一个端面上的高反射膜结构的另一端面。器件的腔长（L）为1200μm以上。这种具有高扭曲电流和令人满意的线性电流 - 光输出特性的激光装置是用于光纤放大器的有用的泵浦光源。

10. 发明授权

US07760586B2 Bottom-sediment classification device and method 有权
标题翻译：底泥分类装置及方法
公开(公告)号：US07760586B2
公开(公告)日：2010-07-20
申请号：US12150578
申请日：2008-04-28
申请人： Teruhisa Komatsu , Akira Okunishi , Nicolas Borrallo , Takeharu Yamaguchi
发明人： Teruhisa Komatsu , Akira Okunishi , Nicolas Borrallo , Takeharu Yamaguchi
IPC分类号： G01S15/00 , G01V1/00
CPC分类号： G01S7/539 , G01S7/529 , G01S15/101 , G01S15/88
摘要： A device and method for determining bottom sediment is provided. The method includes transmitting a pulse of a pulse width corresponding to a water-bottom depth, extracting a series of amplitude data of water-bottom echo signals from predetermined signals among the water-bottom echo signals received by the transducer at a predetermined time interval, normalizing the extracted series of amplitude data after TVG-processed, calculating two or more feature quantities based on the normalized series of amplitude data in each of segments of the normalized series of amplitude data, and a value corresponding to the water-bottom depth, and generating bottom-sediment classification information indicating the bottom sediment based on the two or more feature quantities.
摘要翻译：提供了一种用于确定底部沉积物的装置和方法。该方法包括发送与水底深度相对应的脉冲宽度的脉冲，从预定时间间隔由换能器接收的水底回波信号之中的预定信号提取一系列水底回波信号的振幅数据，在TVG处理后对所提取的一系列振幅数据进行归一化，基于归一化幅度数据序列的每个段中的归一化幅度数据序列计算两个或更多个特征量，以及对应于水底深度的值，以及基于两个或更多个特征量产生表示底部沉积物的底部沉积物分类信息。

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