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1. 发明授权

US5792556A Diamond crystal 失效
标题翻译：钻石水晶
公开(公告)号：US5792556A
公开(公告)日：1998-08-11
申请号：US410218
申请日：1995-03-24
申请人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
发明人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04 , Y10S977/879 , Y10T428/30 , Y10T428/31678
摘要： There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.
摘要翻译：提供了一种金刚石晶体，其中（111）取向平面是通过与基板表面平行的化学气相沉积方法在基板上合成的金刚石晶体，并且（111）取向平面于基板表面的面积是+ E，fra 1/24 + EE或更小的衬底上晶体的面积。

2. 发明授权

US6060118A CVD method of manufacturing diamond crystal 失效
标题翻译：制造金刚石晶体的CVD方法
公开(公告)号：US6060118A
公开(公告)日：2000-05-09
申请号：US988612
申请日：1997-12-11
申请人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
发明人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
IPC分类号： C30B25/02 , C23C16/26 , B05D3/06
CPC分类号： C30B25/02 , C30B29/04 , Y10S977/879 , Y10T428/30 , Y10T428/31678
摘要： There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24or less an area of the crystal on the substrate. A source gas is activated on a substrate consisting of a material which is not reactive with carbon. The source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. Subsequently, a diamond crystal in which the (111) orientation plane is parallel to the substrate surface, and the area of the (111) orientation plane parallel to the substrate surface is precipitated on the substrate. A copper plate is preferably contains used as the substrate. The source gas preferably contains at least methane gas and hydrogen gas, and the concentration of methane gas is preferably set to be 0.5% or less.
摘要翻译：提供了一种金刚石晶体，其中（111）取向平面是通过与基板表面平行的化学气相沉积方法在基板上合成的金刚石晶体，并且（111）取向平面于基板表面的面积是+ E，fra 1/24 + EE或更小的衬底上晶体的面积。源气体在由不与碳反应的材料组成的基材上活化。原料气体至少含有碳原子和氢原子，使得碳原子数与原料气体的总分子数之比为0.5％以下。随后，其中（111）取向平面平行于衬底表面的金刚石晶体和平行于衬底表面的（111）取向平面的面积沉淀在衬底上。铜板优选用作基板。源气体优选至少含有甲烷气体和氢气，甲烷气体的浓度优选设定为0.5％以下。

3. 发明授权

US5854496A Hydrogen-terminated diamond misfet and its manufacturing method 失效
标题翻译：氢终止金刚石错误及其制造方法
公开(公告)号：US5854496A
公开(公告)日：1998-12-29
申请号：US919792
申请日：1997-08-29
申请人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
发明人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1033 , H01L29/66045 , H01L29/78
摘要： On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
摘要翻译：在通过端接同质外延金刚石或异质外延金刚石或表面平坦多晶金刚石的表面2形成的氢终止金刚石1的表面上形成漏极 - 欧姆接触4和金 - 欧姆接触3，铂，由氧化硅（SiO x：1

4. 发明授权

US6025211A Hydrogen-terminated diamond MISFET and its manufacturing method 失效
标题翻译：氢终端金刚石MISFET及其制造方法
公开(公告)号：US6025211A
公开(公告)日：2000-02-15
申请号：US158066
申请日：1998-09-22
申请人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
发明人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786
CPC分类号： H01L29/1602 , H01L29/1033 , H01L29/66045 , H01L29/78
摘要： On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
摘要翻译：在通过端接同质外延金刚石或异质外延金刚石或表面平坦多晶金刚石的表面2形成的氢终止金刚石1的表面上形成漏极 - 欧姆接触4和金 - 欧姆接触3，铂，由氧化硅（SiO x：1

5. 发明授权

US07009219B1 Diamond ultraviolet light-emitting device 失效
标题翻译：钻石紫外线发光装置
公开(公告)号：US07009219B1
公开(公告)日：2006-03-07
申请号：US10019308
申请日：2000-06-27
申请人： Takefumi Ishikura , Kenji Horiuchi , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
发明人： Takefumi Ishikura , Kenji Horiuchi , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H05B33/145
摘要： A small, simple current-injection diamond ultraviolet light-emitting device comprising a high-quality diamond grown by chemical vapor deposition (CVD) method (1), a surface conductive layer (2) provided on the surface of the diamond, and electrodes (4, 5) provided on the surface conductive layer. The device is a free-exciton recombination emission diamond ultraviolet light-emitting device comprising a CVD diamond crystal where the free-exciton recombination radiation (235 nm) caused by current injection is dominant.
摘要翻译：一种小型简单的电流注入金刚石紫外线发光器件，其包括通过化学气相沉积（CVD）方法（1）生长的高品质金刚石，设置在金刚石表面上的表面导电层（2）和电极 4,5）设置在表面导电层上。该装置是包含CVD金刚石晶体的自由激子复合发射金刚石紫外光发射装置，其中由电流注入引起的自由激子复合辐射（235nm）占主导地位。

6. 发明授权

US06872981B1 Diamond ultraviolet luminescent element 失效
标题翻译：钻石紫外线发光元件
公开(公告)号：US06872981B1
公开(公告)日：2005-03-29
申请号：US10019275
申请日：2000-06-29
申请人： Kenji Horiuchi , Takefumi Ishikura , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
发明人： Kenji Horiuchi , Takefumi Ishikura , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
IPC分类号： H01L27/15 , H01L33/34 , H01L29/16
CPC分类号： H01L33/34 , H01L27/156
摘要： A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).
摘要翻译：具有电流注入发光二极管结构的金刚石紫外线发光元件（10）包括通过高压高温法合成的高品质硼掺杂p型金刚石晶体（半导体层）（1）; 通过化学气相沉积在第一金刚石表面上形成的磷掺杂n型金刚石晶体（n型半导体层）（3）; 形成在所述n型半导体层（3）的表面上的电极（5）; 以及形成在p型半导体层（1）的表面上的电极（7）。归因于由电流注入导致的游离激子重组的发光（235nm）在紫外线波长区域（10）中占主导地位。

7. 发明授权

US5786604A Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method 失效
标题翻译：元素隔离氢封端金刚石半导体器件及其制造方法
公开(公告)号：US5786604A
公开(公告)日：1998-07-28
申请号：US527809
申请日：1995-09-13
申请人： Satoshi Yamashita , Hiroshi Kawarada , Masahiro Itoh , Naofumi Nakamura
发明人： Satoshi Yamashita , Hiroshi Kawarada , Masahiro Itoh , Naofumi Nakamura
IPC分类号： H01L21/04 , H01L21/338 , H01L21/76 , H01L29/16 , H01L29/812 , H01L31/0312 , H01L29/00 , H01L29/12
CPC分类号： H01L29/1602 , H01L21/76 , H01L29/66045 , H01L29/812
摘要： A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.
摘要翻译：具有集成在单个金刚石基底上并与其它半导体元件绝缘的至少一个MESFET的金刚石半导体器件通过制备具有氢封端表面的同质外延金刚石膜1而制成; 然后在膜1上形成漏极欧姆接触3，源欧姆接触4，金和铝的栅电极5; 并且改变除用氢原子以外的原子终止的MESFET的位置之外的氢封端表面的位置。

8. 发明申请

US20120108589A1 AZABICYCLO COMPOUND AND SALT THEREOF 有权
标题翻译：雅各布酯化合物及其盐
公开(公告)号：US20120108589A1
公开(公告)日：2012-05-03
申请号：US13378527
申请日：2010-07-09
申请人： Makoto Kitade , Shuichi Ohkubo , Chihoko Yoshimura , Satoshi Yamashita , Hiromi Oshiumi , Takao Uno , Yuichi Kawai
发明人： Makoto Kitade , Shuichi Ohkubo , Chihoko Yoshimura , Satoshi Yamashita , Hiromi Oshiumi , Takao Uno , Yuichi Kawai
IPC分类号： A61K31/437 , A61K31/5377 , A61P35/00 , C07D471/04
CPC分类号： C07D471/04 , C07D209/08 , C07D519/00
摘要： It is intended to provide a novel azabicyclo compound which exhibits both HSP90 inhibitory activity and cell proliferation inhibitory effect. Specifically disclosed is a compound represented by the following general formula (I) or a salt thereof: wherein X1 represents CH or N; any one of X2, X3 and X4 represents N, and the others represent CH; any one or two of Y1, Y2, Y3 and Y4 represent C—R4, and the others are the same or different and represent CH or N; R1 represents an optionally substituted monocyclic or bicyclic unsaturated heterocyclic group having 1 to 4 heteroatoms selected from N, S and O; R2 represents an alkyl group having 1 to 6 carbon atoms, or the like; and R3 and R4 represent —CO—R5 or the like.
摘要翻译：旨在提供表现出HSP90抑制活性和细胞增殖抑制作用的新型氮杂双环化合物。具体公开的是由下列通式（I）表示的化合物或其盐：其中X1表示CH或N; X2，X3和X4中的任一个表示N，其余的表示CH; Y 1，Y 2，Y 3和Y 4中的任何一个或两个表示C-R 4，其余的相同或不同，表示CH或N; R1表示具有1至4个选自N，S和O的杂原子的任选取代的单环或双环不饱和杂环基; R2表示碳原子数1〜6的烷基等。 R3和R4表示-CO-R5等。

9. 发明申请

US20110208397A1 STARTING-CLUTCH CONTROL APPARATUS 审中-公开
标题翻译：起动离合器控制装置
公开(公告)号：US20110208397A1
公开(公告)日：2011-08-25
申请号：US12975371
申请日：2010-12-22
申请人： Ayae IKURO , Takahiro Eguchi , Takeshi Kurata , Tamotsu Kotegawa , Satoshi Yamashita , Yoshiteru Matsuura , Satoshi Kanazawa
发明人： Ayae IKURO , Takahiro Eguchi , Takeshi Kurata , Tamotsu Kotegawa , Satoshi Yamashita , Yoshiteru Matsuura , Satoshi Kanazawa
IPC分类号： F16D48/06
CPC分类号： F16D48/06 , F16D2500/30405 , F16D2500/5102 , F16D2500/5106 , F16D2500/70458
摘要： A starting-clutch control apparatus is configured to control connection between a driving side and a driven side of a vehicle using a starting clutch disposed therebetween. A driving-shaft rotation speed detector is configured to detect a rotation speed of a driving shaft of the starting clutch. A driven-shaft rotation speed detector is configured to detect a rotation speed of a driven shaft of the starting clutch. A cumulative work amount calculator is configured to calculate a cumulative work amount of the starting clutch based on pressure applied to the starting clutch, the rotation speed of the driving shaft, and the rotation speed of the driven shaft. A torque output restricting device is configured to restrict an output torque of a driving source of the vehicle when the starting clutch is in a transient engagement state and the cumulative work amount exceeds a first specific value.
摘要翻译：起动离合器控制装置被配置为使用设置在其间的起动离合器来控制车辆的驱动侧和从动侧之间的连接。驱动轴转速检测器被配置为检测起动离合器的驱动轴的转速。从动轴转速检测器被构造成检测起动离合器的从动轴的转速。累积作业量计算器被配置为基于施加到起动离合器的压力，驱动轴的转速和从动轴的转速来计算起动离合器的累积作业量。扭矩输出限制装置被构造成当起动离合器处于暂时接合状态并且累积作业量超过第一特定值时，限制车辆的驱动源的输出扭矩。

10. 发明授权

US07623314B2 Head control device, storage device, and contact detection method 失效
标题翻译：头控制装置，存储装置和接触检测方法
公开(公告)号：US07623314B2
公开(公告)日：2009-11-24
申请号：US11998326
申请日：2007-11-29
申请人： Satoshi Yamashita , Shunji Saitoh , Yukio Abe , Shigenori Yanagi
发明人： Satoshi Yamashita , Shunji Saitoh , Yukio Abe , Shigenori Yanagi
IPC分类号： G11B21/02 , G11B27/36
CPC分类号： G11B5/607 , G11B5/6076
摘要： A head control device for controlling, through thermal expansion of a heater, a position of a head for reading and writing data from and to a storage medium, includes a heater control unit that increases a current supplied to the heater stepwise; and an external-force sample retrieving unit that retrieves sampling values of signals each indicating a magnitude of an external force acting on the head in a moving direction of a head support mechanism. The head control device also includes an external-force evaluating unit that calculates a representative value of the sampling values retrieved by the external-force sample retrieving unit to evaluate the magnitude of the external force every time the heater control unit increases the current; and a contact detecting unit that detects contact between the head and the storage medium by comparing each evaluation result by the external-force evaluating unit with a predetermined threshold value.
摘要翻译：一种头控制装置，用于通过加热器的热膨胀来控制用于从存储介质读取和写入数据的头部的位置，其包括加热器控制单元，其逐步增加供应给加热器的电流; 以及外力取样单元，其检索各自表示在头部支撑机构的移动方向上作用在头部上的外力的大小的信号的采样值。头部控制装置还包括外力评估单元，其计算由外力抽样检索单元检索出的取样值的代表值，以便每当加热器控制单元增加电流时评估外力的大小; 以及接触检测单元，其通过将外力评估单元的每个评估结果与预定阈值进行比较来检测头部和存储介质之间的接触。

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