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1. 发明授权

US6025211A Hydrogen-terminated diamond MISFET and its manufacturing method 失效
标题翻译：氢终端金刚石MISFET及其制造方法
公开(公告)号：US6025211A
公开(公告)日：2000-02-15
申请号：US158066
申请日：1998-09-22
申请人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
发明人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786
CPC分类号： H01L29/1602 , H01L29/1033 , H01L29/66045 , H01L29/78
摘要： On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
摘要翻译：在通过端接同质外延金刚石或异质外延金刚石或表面平坦多晶金刚石的表面2形成的氢终止金刚石1的表面上形成漏极 - 欧姆接触4和金 - 欧姆接触3，铂，由氧化硅（SiO x：1

2. 发明授权

US5854496A Hydrogen-terminated diamond misfet and its manufacturing method 失效
标题翻译：氢终止金刚石错误及其制造方法
公开(公告)号：US5854496A
公开(公告)日：1998-12-29
申请号：US919792
申请日：1997-08-29
申请人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
发明人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1033 , H01L29/66045 , H01L29/78
摘要： On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
摘要翻译：在通过端接同质外延金刚石或异质外延金刚石或表面平坦多晶金刚石的表面2形成的氢终止金刚石1的表面上形成漏极 - 欧姆接触4和金 - 欧姆接触3，铂，由氧化硅（SiO x：1

3. 发明授权

US5792556A Diamond crystal 失效
标题翻译：钻石水晶
公开(公告)号：US5792556A
公开(公告)日：1998-08-11
申请号：US410218
申请日：1995-03-24
申请人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
发明人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04 , Y10S977/879 , Y10T428/30 , Y10T428/31678
摘要： There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.
摘要翻译：提供了一种金刚石晶体，其中（111）取向平面是通过与基板表面平行的化学气相沉积方法在基板上合成的金刚石晶体，并且（111）取向平面于基板表面的面积是+ E，fra 1/24 + EE或更小的衬底上晶体的面积。

4. 发明授权

US6060118A CVD method of manufacturing diamond crystal 失效
标题翻译：制造金刚石晶体的CVD方法
公开(公告)号：US6060118A
公开(公告)日：2000-05-09
申请号：US988612
申请日：1997-12-11
申请人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
发明人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
IPC分类号： C30B25/02 , C23C16/26 , B05D3/06
CPC分类号： C30B25/02 , C30B29/04 , Y10S977/879 , Y10T428/30 , Y10T428/31678
摘要： There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24or less an area of the crystal on the substrate. A source gas is activated on a substrate consisting of a material which is not reactive with carbon. The source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. Subsequently, a diamond crystal in which the (111) orientation plane is parallel to the substrate surface, and the area of the (111) orientation plane parallel to the substrate surface is precipitated on the substrate. A copper plate is preferably contains used as the substrate. The source gas preferably contains at least methane gas and hydrogen gas, and the concentration of methane gas is preferably set to be 0.5% or less.
摘要翻译：提供了一种金刚石晶体，其中（111）取向平面是通过与基板表面平行的化学气相沉积方法在基板上合成的金刚石晶体，并且（111）取向平面于基板表面的面积是+ E，fra 1/24 + EE或更小的衬底上晶体的面积。源气体在由不与碳反应的材料组成的基材上活化。原料气体至少含有碳原子和氢原子，使得碳原子数与原料气体的总分子数之比为0.5％以下。随后，其中（111）取向平面平行于衬底表面的金刚石晶体和平行于衬底表面的（111）取向平面的面积沉淀在衬底上。铜板优选用作基板。源气体优选至少含有甲烷气体和氢气，甲烷气体的浓度优选设定为0.5％以下。

5. 发明授权

US07009219B1 Diamond ultraviolet light-emitting device 失效
标题翻译：钻石紫外线发光装置
公开(公告)号：US07009219B1
公开(公告)日：2006-03-07
申请号：US10019308
申请日：2000-06-27
申请人： Takefumi Ishikura , Kenji Horiuchi , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
发明人： Takefumi Ishikura , Kenji Horiuchi , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H05B33/145
摘要： A small, simple current-injection diamond ultraviolet light-emitting device comprising a high-quality diamond grown by chemical vapor deposition (CVD) method (1), a surface conductive layer (2) provided on the surface of the diamond, and electrodes (4, 5) provided on the surface conductive layer. The device is a free-exciton recombination emission diamond ultraviolet light-emitting device comprising a CVD diamond crystal where the free-exciton recombination radiation (235 nm) caused by current injection is dominant.
摘要翻译：一种小型简单的电流注入金刚石紫外线发光器件，其包括通过化学气相沉积（CVD）方法（1）生长的高品质金刚石，设置在金刚石表面上的表面导电层（2）和电极 4,5）设置在表面导电层上。该装置是包含CVD金刚石晶体的自由激子复合发射金刚石紫外光发射装置，其中由电流注入引起的自由激子复合辐射（235nm）占主导地位。

6. 发明授权

US06872981B1 Diamond ultraviolet luminescent element 失效
标题翻译：钻石紫外线发光元件
公开(公告)号：US06872981B1
公开(公告)日：2005-03-29
申请号：US10019275
申请日：2000-06-29
申请人： Kenji Horiuchi , Takefumi Ishikura , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
发明人： Kenji Horiuchi , Takefumi Ishikura , Satoshi Yamashita , Aki Kawamura , Kazuo Nakamura , Kenichi Nakamura , Takahiro Ide
IPC分类号： H01L27/15 , H01L33/34 , H01L29/16
CPC分类号： H01L33/34 , H01L27/156
摘要： A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).
摘要翻译：具有电流注入发光二极管结构的金刚石紫外线发光元件（10）包括通过高压高温法合成的高品质硼掺杂p型金刚石晶体（半导体层）（1）; 通过化学气相沉积在第一金刚石表面上形成的磷掺杂n型金刚石晶体（n型半导体层）（3）; 形成在所述n型半导体层（3）的表面上的电极（5）; 以及形成在p型半导体层（1）的表面上的电极（7）。归因于由电流注入导致的游离激子重组的发光（235nm）在紫外线波长区域（10）中占主导地位。

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