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1. 发明授权

US5311041A Thin film transistor having an inverted stagger type structure 失效
标题翻译：具有倒置交错型结构的薄膜晶体管
公开(公告)号：US5311041A
公开(公告)日：1994-05-10
申请号：US846047
申请日：1992-03-05
申请人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
发明人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
IPC分类号： H01L23/15 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L27/13
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor having an inverted stagger type structure is formed on a substrate. A gate film having a gate electrode portion is formed on the substrate. A gate insulating film is formed on the gate electrode portion of the gate film such that the gate insulating film is located entirely inside a perimeter defied by the outer edges of the gate electrode portion. A polycrystalline semiconductor film, which is an active layer of the transistor, is formed on the gate insulating film such that it is entirely inside a perimeter defined by the outer edges of the gate insulating layer. The polycrystalline semiconductor film, gate insulating film and gate film are selectively photoetched after being formed on the substrate. Source and drain electrode films are formed so that the electrode films electrically connect with the polycrystalline semiconductor film.
摘要翻译：在基板上形成具有反交错型结构的薄膜晶体管。在基板上形成具有栅电极部分的栅极膜。栅极绝缘膜形成在栅极膜的栅电极部分上，使得栅极绝缘膜完全位于由栅电极部分的外边缘反射的周边内。作为晶体管的有源层的多晶半导体膜形成在栅极绝缘膜上，使得其完全在由栅极绝缘层的外边缘限定的周边内。在形成在基板上之后，选择性地对多晶半导体膜，栅极绝缘膜和栅极膜进行光刻。形成源极和漏极电极膜，使得电极膜与多晶半导体膜电连接。

2. 发明授权

US5397420A Fine structure forming device 失效
标题翻译：精细结构成型装置
公开(公告)号：US5397420A
公开(公告)日：1995-03-14
申请号：US935104
申请日：1992-08-27
申请人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
发明人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
IPC分类号： B23K10/00 , H05H1/30 , H05H1/00
CPC分类号： H05H1/30 , B23K10/00
摘要： A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.
摘要翻译：微加工装置以低成本形成在工件中具有可选深度的高方位结构。该装置对工件和加工电极施加高频电力，以在加工电极的前端附近形成等离子体区域。该装置引导反应气体进入等离子体区域以激活气体。活性气体被工件的面向加工电极前端的表面吸附。吸附的气体与工件的材料反应并局部地从工件的表面上蚀刻掉。该装置的进给机构根据蚀刻的进行将加工电极朝向工件进给，从而在工件中形成沟槽。工件的反应产物和通过蚀刻产生的反应性气体粘附并沉积在沟槽的侧壁上并形成保护膜，以保护侧壁不被蚀刻，从而为沟槽提供高纵横比。

3. 发明授权

US4819037A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819037A
公开(公告)日：1989-04-04
申请号：US57027
申请日：1987-06-03
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
IPC分类号： H01L27/08 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66712 , H01L21/76245 , H01L21/76264 , H01L21/764 , H01L21/8238 , H01L27/0922 , H01L21/76289
摘要： In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.
摘要翻译：在主要具有垂直半导体元件的半导体器件中，在形成于衬底上的绝缘层上形成彼此间隔开的多个半导体元件，由此完成彼此电绝缘。用作电极的多个半导体金属间化合物层以与用于各个半导体元件的半导体元件相同的间隔的关系独立地形成，使得可以根据需要确定每个半导体元件的电位。因此，可以在单个半导体单晶基板上形成N型DMOS和P型DMOS等。

4. 发明授权

US4643745A Air cleaner using ionic wind 失效
标题翻译：空气净化器使用离子风
公开(公告)号：US4643745A
公开(公告)日：1987-02-17
申请号：US682753
申请日：1984-12-17
申请人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
发明人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
IPC分类号： B60H3/06 , B03C3/12 , B03C3/40 , B03C3/41 , B03C3/00
CPC分类号： B03C3/12 , B03C3/08 , B03C3/41 , B03C3/47 , B03C2201/10 , B03C2201/14
摘要： An air cleaner has a discharge electrode member, an intermediate electrode member, and a counter electrode member disposed opposed and spaced apart from each other. A voltage source is connected between the discharge member and the intermediate member for generating ionic wind. A further voltage source is connected between the intermediate member and the counter member for accelerating the ionic wind such that the gradient direction of the electric field between the discharge member and the intermediate member is identical to that between the intermediate member and the counter member.
摘要翻译：空气滤清器具有放电电极构件，中间电极构件和相对设置并彼此间隔开的对置电极构件。电压源连接在排出构件和用于产生离子风的中间构件之间。在中间构件和对置构件之间连接有另外的电压源，用于加速离子风，使得排出构件和中间构件之间的电场的梯度方向与中间构件和对置构件之间的梯度方向相同。

5. 发明授权

US5153700A Crystal-etched matching faces on semiconductor chip and supporting semiconductor substrate 失效
标题翻译：半导体芯片和支撑半导体基板上的晶体表面匹配
公开(公告)号：US5153700A
公开(公告)日：1992-10-06
申请号：US643585
申请日：1991-01-22
申请人： Fumio Ohara , Toshiyuki Kawai , Nobuyoshi Sakakibara , Seizi Huzino , Tadashi Hattori , Kazunori Kawamoto
发明人： Fumio Ohara , Toshiyuki Kawai , Nobuyoshi Sakakibara , Seizi Huzino , Tadashi Hattori , Kazunori Kawamoto
IPC分类号： H01L21/60 , H01L23/13 , H01L23/538 , H01L29/06
CPC分类号： H01L24/32 , H01L23/13 , H01L23/5384 , H01L24/24 , H01L24/82 , H01L29/0657 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/73267 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165
摘要： Semiconductor chips are mounted in a supporting semiconductor substrate, with matching anisotropic (crystal plane) faces on the chips and substrate. The chips may extend above the substrate to facilitate connection together.

6. 发明授权

US4689056A Air cleaner using ionic wind 失效
标题翻译：空气净化器使用离子风
公开(公告)号：US4689056A
公开(公告)日：1987-08-25
申请号：US902014
申请日：1986-08-29
申请人： Hiroki Noguchi , Toshiki Kobayashi , Akira Fukami , Tadashi Hattori , Nobuyoshi Sakakibara , Teiichi Nabeta
发明人： Hiroki Noguchi , Toshiki Kobayashi , Akira Fukami , Tadashi Hattori , Nobuyoshi Sakakibara , Teiichi Nabeta
IPC分类号： B03C3/12 , B03C3/00
CPC分类号： B03C3/12
摘要： An air cleaner using an ionic wind having discharge electrodes, a counter electrode arranged downstream of the discharge electrodes, and first and second parallel plate electrodes arranged alternately downstream of the counter electrode. The second parallel plate electrodes are connected to a potential pick-up electrode arranged in the vicinity of the discharge electrodes. The first and second parallel plate electrodes which are arranged alternately serve as dust collecting electrodes.
摘要翻译：使用具有放电电极的离子风的空气净化器，配置在放电电极下游的对置电极以及交替配置在对置电极下游的第一，第二平行板电极。第二平行板电极连接到布置在放电电极附近的吸电极。交替排列的第一和第二平行板电极用作集尘电极。

7. 发明授权

US4992846A Polycrystalline silicon active layer for good carrier mobility 失效
标题翻译：多晶硅活性层，具有良好的载流子迁移率
公开(公告)号：US4992846A
公开(公告)日：1991-02-12
申请号：US549547
申请日：1990-07-09
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Seizi Huzino , Tadashi Hattori
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Seizi Huzino , Tadashi Hattori
IPC分类号： H01L29/78 , H01L21/02 , H01L21/20 , H01L21/324 , H01L21/336 , H01L21/822 , H01L21/84 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/2022 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L29/78675
摘要： In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.
摘要翻译：在制造半导体器件的方法中，非晶硅层沉积在形成在绝缘体层（SiO 2）上的多晶硅层上。同时在低温下对非晶硅层进行热处理，从而形成固相生长层，并且由固相生长层形成晶体管，将离子注入到非晶硅层中。

8. 发明授权

US4673416A Air cleaning apparatus 失效
标题翻译：空气净化装置
公开(公告)号：US4673416A
公开(公告)日：1987-06-16
申请号：US874820
申请日：1986-06-12
申请人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
发明人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
IPC分类号： B03C3/12 , B03C3/41 , B03C3/60 , B03C3/66 , F24F1/00
CPC分类号： B03C3/12 , B03C3/60 , B03C3/66
摘要： An air cleaning apparatus having an electrical dust collecting section has discharge electrodes, electrical field forming electrodes arranged parallel to the flow of charged particles, and dust collecting electrodes each of which is arranged between corresponding two adjacent electrical field forming electrodes to be parallel thereto. One high voltage power source is arranged to generate a potential difference between the discharge electrodes and the dust collecting electrodes. Another high voltage power source is arranged to generate a potential difference between the electrical field forming electrodes and the dust collecting electrodes. Negative electrodes consisting of either the electrical field forming electrodes or the dust collecting electrodes are covered by insulator members.
摘要翻译：具有电集尘部的空气净化装置具有放电电极，与带电粒子的流动平行设置的电场形成电极，以及各自与相邻的两个相邻的电场形成电极平行的集尘电极。一个高压电源被布置成产生放电电极和集尘电极之间的电位差。布置另一高压电源以产生电场形成电极和集尘电极之间的电位差。由电场形成电极或集尘电极组成的负极由绝缘体部件覆盖。

9. 发明授权

US5357073A Electrical discharge machine 失效
标题翻译：放电机
公开(公告)号：US5357073A
公开(公告)日：1994-10-18
申请号：US27532
申请日：1993-03-08
申请人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
发明人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
IPC分类号： B23H7/22 , B23H1/04
CPC分类号： B23H1/04
摘要： An electrode for electrical discharge machining. This spark-machining electrode improves the accuracy at which the workpiece is machined by electrical discharge machining. The electrode can dispense with a mechanism which scans the spark-machining electrode or the workpiece. A plurality of needlelike electrodes are formed on the surface of the spark-machining electrode. The needlelike electrodes are so arranged that they are present in craters created by their respective adjacent needlelike electrodes. The plural electrodes form a group. The shape of the surface of this group is formed according to the desired shape to be formed in the workpiece. Art electric discharge occurs mainly at the tips of the needlelike electrodes and so the capacitance is smaller than the capacitance of the prior art flat-plate electrode. Also, the energy of a single electric discharge can be reduced. Furthermore, electric discharge at the side surfaces of the needlelike electrodes can be suppressed because of the effect of concentration of electric field.
摘要翻译：放电加工用电极。该火花加工电极通过放电加工提高了加工工件的精度。电极可以省去扫描火花加工电极或工件的机构。在火花加工电极的表面上形成多个针状电极。针状电极被布置成使它们存在于由它们各自相邻的针状电极产生的凹坑中。多个电极形成一组。该组的表面的形状根据要在工件中形成的所需形状形成。艺术放电主要发生在针状电极的尖端，因此电容小于现有技术的平板电极的电容。此外，可以减少单个放电的能量。此外，由于电场浓度的影响，可以抑制针状电极的侧面的放电。

10. 发明授权

US4847215A Method for forming silicon carbide semiconductor film 失效
标题翻译：形成碳化硅半导体膜的方法
公开(公告)号：US4847215A
公开(公告)日：1989-07-11
申请号：US264822
申请日：1988-10-31
申请人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
发明人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
IPC分类号： H01L21/205 , C23C16/32 , H01L31/04 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , C23C16/325 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S148/148 , Y10S438/931
摘要： A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.
摘要翻译：一种形成具有宽的光能隙和高导电性的SiC膜的方法，其能够均匀地堆叠在大面积的基板上。通过向基板供给由甲硅烷气体，甲烷气体，二硼烷气体和氢气构成的原料气体，并且具有大约144的氢稀释比和约0.35的碳混合比，形成SiC膜，并且提供60°F的功率至270W（功率密度为80〜350mW / cm 2）的条件下，在220℃的基板温度下，在0.2托的气体压力下，得到10-6Scm-1以上的高导电性，拉曼光谱其峰值在约520cm -1处。

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