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1. 发明授权

US5397420A Fine structure forming device 失效
标题翻译：精细结构成型装置
公开(公告)号：US5397420A
公开(公告)日：1995-03-14
申请号：US935104
申请日：1992-08-27
申请人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
发明人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
IPC分类号： B23K10/00 , H05H1/30 , H05H1/00
CPC分类号： H05H1/30 , B23K10/00
摘要： A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.
摘要翻译：微加工装置以低成本形成在工件中具有可选深度的高方位结构。该装置对工件和加工电极施加高频电力，以在加工电极的前端附近形成等离子体区域。该装置引导反应气体进入等离子体区域以激活气体。活性气体被工件的面向加工电极前端的表面吸附。吸附的气体与工件的材料反应并局部地从工件的表面上蚀刻掉。该装置的进给机构根据蚀刻的进行将加工电极朝向工件进给，从而在工件中形成沟槽。工件的反应产物和通过蚀刻产生的反应性气体粘附并沉积在沟槽的侧壁上并形成保护膜，以保护侧壁不被蚀刻，从而为沟槽提供高纵横比。

2. 发明授权

US5357073A Electrical discharge machine 失效
标题翻译：放电机
公开(公告)号：US5357073A
公开(公告)日：1994-10-18
申请号：US27532
申请日：1993-03-08
申请人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
发明人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
IPC分类号： B23H7/22 , B23H1/04
CPC分类号： B23H1/04
摘要： An electrode for electrical discharge machining. This spark-machining electrode improves the accuracy at which the workpiece is machined by electrical discharge machining. The electrode can dispense with a mechanism which scans the spark-machining electrode or the workpiece. A plurality of needlelike electrodes are formed on the surface of the spark-machining electrode. The needlelike electrodes are so arranged that they are present in craters created by their respective adjacent needlelike electrodes. The plural electrodes form a group. The shape of the surface of this group is formed according to the desired shape to be formed in the workpiece. Art electric discharge occurs mainly at the tips of the needlelike electrodes and so the capacitance is smaller than the capacitance of the prior art flat-plate electrode. Also, the energy of a single electric discharge can be reduced. Furthermore, electric discharge at the side surfaces of the needlelike electrodes can be suppressed because of the effect of concentration of electric field.
摘要翻译：放电加工用电极。该火花加工电极通过放电加工提高了加工工件的精度。电极可以省去扫描火花加工电极或工件的机构。在火花加工电极的表面上形成多个针状电极。针状电极被布置成使它们存在于由它们各自相邻的针状电极产生的凹坑中。多个电极形成一组。该组的表面的形状根据要在工件中形成的所需形状形成。艺术放电主要发生在针状电极的尖端，因此电容小于现有技术的平板电极的电容。此外，可以减少单个放电的能量。此外，由于电场浓度的影响，可以抑制针状电极的侧面的放电。

3. 发明授权

US5574598A Varifocal lens 失效
标题翻译：变焦镜头
公开(公告)号：US5574598A
公开(公告)日：1996-11-12
申请号：US286560
申请日：1994-08-05
申请人： Tukasa Koumura , Michio Hisanaga , Tadashi Hattori
发明人： Tukasa Koumura , Michio Hisanaga , Tadashi Hattori
IPC分类号： G02B3/14 , G02B1/06 , G02B3/12 , G02B15/14
CPC分类号： G02B3/14
摘要： A varifocal lens whose variable focal length can be controlled by, for example, an electric signal, and suitable for use in bar code readers, etc. A varifocal lens comprises a first pressure chamber defined between a glass substrate and a transparent elastic film. The transparent elastic film is faced to the surface of the planar glass substrate having parallel surfaces with a spacer incorporated therebetween to provide the first pressure chamber. A pump is provided adjacent to the first pressure chamber via a communicating path for charging an operating liquid to the first pressure chamber from a second pressure chamber of the pump by electrically deforming the transparent elastic film to form a lens having a variable focal length. The transparent elastic film has a film thickness distribution as such to provide a spherical plane in the central portion thereof and a third order curved surface in the periphery thereof. In this manner, a lens free of aberration can be obtained when a liquid is fed into the first pressure chamber to form a spherical plane.
摘要翻译：可变焦距可以通过例如电信号控制并且适用于条形码读取器等的变焦透镜。变焦透镜包括限定在玻璃基板和透明弹性膜之间的第一压力室。透明弹性膜面对具有平行表面的平面玻璃基板的表面，间隔件结合在其中以提供第一压力室。通过用于通过使透明弹性膜电动变形以形成具有可变焦距的透镜从泵的第二压力室向第一压力室充电操作液体的连通路径，设置有与第一压力室相邻的泵。透明弹性膜的膜厚分布在其中央部分形成球面并在其周边形成三阶曲面。以这种方式，当液体被供给到第一压力室中以形成球面时，可以获得没有像差的透镜。

4. 发明授权

US5311041A Thin film transistor having an inverted stagger type structure 失效
标题翻译：具有倒置交错型结构的薄膜晶体管
公开(公告)号：US5311041A
公开(公告)日：1994-05-10
申请号：US846047
申请日：1992-03-05
申请人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
发明人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
IPC分类号： H01L23/15 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L27/13
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor having an inverted stagger type structure is formed on a substrate. A gate film having a gate electrode portion is formed on the substrate. A gate insulating film is formed on the gate electrode portion of the gate film such that the gate insulating film is located entirely inside a perimeter defied by the outer edges of the gate electrode portion. A polycrystalline semiconductor film, which is an active layer of the transistor, is formed on the gate insulating film such that it is entirely inside a perimeter defined by the outer edges of the gate insulating layer. The polycrystalline semiconductor film, gate insulating film and gate film are selectively photoetched after being formed on the substrate. Source and drain electrode films are formed so that the electrode films electrically connect with the polycrystalline semiconductor film.
摘要翻译：在基板上形成具有反交错型结构的薄膜晶体管。在基板上形成具有栅电极部分的栅极膜。栅极绝缘膜形成在栅极膜的栅电极部分上，使得栅极绝缘膜完全位于由栅电极部分的外边缘反射的周边内。作为晶体管的有源层的多晶半导体膜形成在栅极绝缘膜上，使得其完全在由栅极绝缘层的外边缘限定的周边内。在形成在基板上之后，选择性地对多晶半导体膜，栅极绝缘膜和栅极膜进行光刻。形成源极和漏极电极膜，使得电极膜与多晶半导体膜电连接。

5. 发明授权

US4847215A Method for forming silicon carbide semiconductor film 失效
标题翻译：形成碳化硅半导体膜的方法
公开(公告)号：US4847215A
公开(公告)日：1989-07-11
申请号：US264822
申请日：1988-10-31
申请人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
发明人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
IPC分类号： H01L21/205 , C23C16/32 , H01L31/04 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , C23C16/325 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S148/148 , Y10S438/931
摘要： A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.
摘要翻译：一种形成具有宽的光能隙和高导电性的SiC膜的方法，其能够均匀地堆叠在大面积的基板上。通过向基板供给由甲硅烷气体，甲烷气体，二硼烷气体和氢气构成的原料气体，并且具有大约144的氢稀释比和约0.35的碳混合比，形成SiC膜，并且提供60°F的功率至270W（功率密度为80〜350mW / cm 2）的条件下，在220℃的基板温度下，在0.2托的气体压力下，得到10-6Scm-1以上的高导电性，拉曼光谱其峰值在约520cm -1处。

6. 发明授权

US4819037A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819037A
公开(公告)日：1989-04-04
申请号：US57027
申请日：1987-06-03
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
IPC分类号： H01L27/08 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66712 , H01L21/76245 , H01L21/76264 , H01L21/764 , H01L21/8238 , H01L27/0922 , H01L21/76289
摘要： In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.
摘要翻译：在主要具有垂直半导体元件的半导体器件中，在形成于衬底上的绝缘层上形成彼此间隔开的多个半导体元件，由此完成彼此电绝缘。用作电极的多个半导体金属间化合物层以与用于各个半导体元件的半导体元件相同的间隔的关系独立地形成，使得可以根据需要确定每个半导体元件的电位。因此，可以在单个半导体单晶基板上形成N型DMOS和P型DMOS等。

7. 发明授权

US09810979B2 Imprint apparatus and article manufacturing method 有权
公开(公告)号：US09810979B2
公开(公告)日：2017-11-07
申请号：US13541899
申请日：2012-07-05
申请人： Tadashi Hattori
发明人： Tadashi Hattori
IPC分类号： B29C59/02 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B29C2059/023 , B82Y10/00 , B82Y40/00
摘要： An imprint apparatus includes: a first driving mechanism configured to move at least one of a mold holder and a substrate holder such that a mold and an imprint material are contact with each other; a second driving mechanism configured to move at least one of the holders such that the substrate is aligned with the mold; a measurement device configured to measure relative positions between a mold mark and a substrate mark in a state in which the mold and the imprint material are not in contact with each other; and a controller configured to control the second driving mechanism based on information of a relationship between a moving amount of at least one of the holders, and change in relative positions between the marks, information of the moving amount, and information of the measured relative positions.

8. 发明申请

US20120013329A1 ROTATION SENSOR DEVICE FOR WHEEL 审中-公开
标题翻译：旋转传感器装置
公开(公告)号：US20120013329A1
公开(公告)日：2012-01-19
申请号：US13259689
申请日：2010-01-19
申请人： Tadashi Hattori , Kyungwoo Kim
发明人： Tadashi Hattori , Kyungwoo Kim
IPC分类号： G01B7/30
CPC分类号： G01P3/443 , F16C19/184 , F16C33/61 , F16C33/723 , F16C41/007 , F16C2326/02 , G01P1/026 , G01P3/487
摘要： A rotation sensor device for a wheel including a core metal member configured to attach to an outer member of a wheel bearing device and having a containment recess protruding in a direction of a pulser ring provided on an inner member. The rotation sensor device further includes a sensing portion formed by molding a sensor element with a synthetic resin material as a separate component from the core metal member. The sensing portion is fixed within the containment recess and positioned opposite the pulser ring with a bottom wall of the containment recess positioned therebetween.
摘要翻译：一种用于车轮的旋转传感器装置，包括：芯金属构件，其构造成附接到车轮轴承装置的外部构件，并且具有沿设置在内部构件上的脉冲发生器环的方向突出的容纳凹部。旋转传感器装置还包括通过将具有合成树脂材料的传感器元件作为与芯金属构件分离的部件成型而形成的感测部分。感测部分固定在容纳凹部内并且与脉冲发生器环相对定位，其中位于其间的容纳凹部的底壁。

9. 发明授权

US07341694B2 Ammonia sensor 有权
标题翻译：氨传感器
公开(公告)号：US07341694B2
公开(公告)日：2008-03-11
申请号：US10669660
申请日：2003-09-25
申请人： Hiroyuki Nishiyama , Shiro Kakimoto , Ryuji Inoue , Hitoshi Yokoi , Noboru Ishida , Takafumi Oshima , Satoshi Sugaya , Koichi Imaeda , Tadashi Hattori , Atsushi Satsuma
发明人： Hiroyuki Nishiyama , Shiro Kakimoto , Ryuji Inoue , Hitoshi Yokoi , Noboru Ishida , Takafumi Oshima , Satoshi Sugaya , Koichi Imaeda , Tadashi Hattori , Atsushi Satsuma
IPC分类号： G01N27/04 , G01N33/00
CPC分类号： G01N33/0054 , G01N27/4075 , Y02A50/246 , Y10T436/173845 , Y10T436/175383 , Y10T436/25875
摘要： In an ammonia sensor (1), lead portions (7) and (9) are provided on an insulating substrate (5); a pair of comb-shaped electrodes (11) and (13) are connected to the lead portions (7) and (9), respectively; a sensitive layer (15) is provided on the comb-shaped electrodes (11) and (13); and a protective layer (17) is provided on the sensitive layer (15). Particularly, the sensitive layer (15) is formed of a gas-sensitive raw material predominantly containing ZrO2 and containing at least W in an amount of 2 to 40 wt. % as reduced to WO3.
摘要翻译：在氨传感器（1）中，引线部分（7）和（9）设置在绝缘基板（5）上; 一对梳状电极（11）和（13）分别连接到引线部分（7）和（9）; 敏感层（15）设置在梳状电极（11）和（13）上; 并且在敏感层（15）上设置保护层（17）。特别地，敏感层（15）由主要含有ZrO 2的气敏原料形成，至少含有W为2〜40wt。％降低至WO 3。

10. 发明授权

US07337679B2 Rotation sensor 有权
标题翻译：旋转传感器
公开(公告)号：US07337679B2
公开(公告)日：2008-03-04
申请号：US11137500
申请日：2005-05-26
申请人： Tadashi Hattori , Masashi Sugimoto
发明人： Tadashi Hattori , Masashi Sugimoto
IPC分类号： G01B7/30
CPC分类号： G01D11/245 , G01P1/026
摘要： A rotation sensor includes a rotation detector mounted on a holder which is in turn inserted in a casing through its opening. A cover is formed by molding a resin so as to cover the opening of the casing and the portion of the holder protruding from the opening of the casing. A pair of relay terminals extend through a base portion of the holder and a gap defined in the holder, are fixed to a support wall, and connected to respective lead pieces of the detector. A resin cover is formed by molding a resin. When forming the cover, pressure is applied to the holder, thereby causing the holder to bulge axially in the holder. This in turn pushes the relay terminals in the axial direction. But since the relay terminals are fixed to the support wall, the support wall will absorb such pushing force, thereby preventing such pushing from being transmitted to the detector. In order to more effectively absorb such pushing force, the relay terminals may be provided with bent portions in the gap.
摘要翻译：旋转传感器包括安装在保持器上的旋转检测器，该保持器又通过其开口插入到壳体中。通过模制树脂以覆盖壳体的开口和保持器从壳体的开口突出的部分而形成盖。一对继电器端子延伸穿过保持器的基部并且限定在保持器中的间隙固定到支撑壁上，并连接到检测器的相应引线片。通过模制树脂形成树脂盖。当形成盖时，将压力施加到保持器，从而使保持件在保持器中轴向凸出。这继而沿轴向推动继电器端子。但是由于中继端子固定在支撑壁上，支撑壁将吸收这种推力，从而防止这种推动传递到检测器。为了更有效地吸收这种推力，中继端子可以在间隙中设置弯曲部分。

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