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    • 4. 发明申请
    • Interaction detecting method and bioassay device, and bioassay-use substrate
    • 相互作用检测方法和生物测定装置以及生物测定用底物
    • US20060063153A1
    • 2006-03-23
    • US10529949
    • 2003-09-24
    • Takayoshi MamineTakashi Kinoshita
    • Takayoshi MamineTakashi Kinoshita
    • C12Q1/68C12M1/34
    • G01N29/036B82Y5/00C12Q1/6816G01N2291/0257C12Q2565/60
    • In a cell detecting part (2), and end face (13a) of a cantilever (13) is previously surface treated so that a detecting nucleotide chain D can be fixed thereto. In a reaction area (10), and electric field is generated by a cathode (11) and an anode (12). A target nucleotide chain T dripped from a nozzle (3) moves to the end face (13a) while the target nucleotide chain T is stretched. When the detecting nucleotide chain D and the target nucleotide chain T are hybridized, the mass of the cantilever (13) is increased to lower a natural frequency. Thus, ac voltage is applied to the cantilever (13) to measure the change of the natural frequency. Thus, whether or not there is the hybridization is detected and the number of the hybridized target nucleotide chains T is quantitatively detected.
    • 在细胞检测部(2)中,预先对悬臂(13)的端面(13a)进行表面处理,使检测用核苷酸链D固定于其上。 在反应区域(10)中,由阴极(11)和阳极(12)产生电场。 从喷嘴(3)滴下的目标核苷酸链T移动到端面(13a),同时靶核苷酸链T被拉伸。 当检测核苷酸链D和靶核苷酸链T杂交时,悬臂(13)的质量增加以降低固有频率。 因此,将交流电压施加到悬臂(13)以测量固有频率的变化。 因此,是否检测到杂交,并且定量检测杂交的靶核苷酸链T的数量。
    • 5. 发明授权
    • Semiconductor manufacturing apparatus and semiconductor device manufacturing method
    • 半导体制造装置及半导体装置的制造方法
    • US06549608B1
    • 2003-04-15
    • US09538737
    • 2000-03-30
    • Takayoshi MamineNobuyuki MatsuzawaNoriyuki Kishii
    • Takayoshi MamineNobuyuki MatsuzawaNoriyuki Kishii
    • G21K500
    • G03F7/70008
    • To provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method able to form a sufficiently precise pattern by ablation. A semiconductor manufacturing apparatus comprising a light source emitting light of a first wavelength on the surface of a wafer and a mask through which at least a part of the light of the first wavelength passes and removing a material of the part of the wafer exposed by the light of the first wavelength by vaporization, wherein the light source comprises an electron beam generating means for generating an electron beam and a light emitting means for emitting light of a second wavelength longer than the first wavelength and wherein the light of the first wavelength is inverse Compton scattered light obtained by collision of electrons in the electron beam with photons in the light of the second wavelength causing the energy of the electrons to be given to the photons and a semiconductor device manufacturing method using the apparatus.
    • 1.一种半导体制造装置,其特征在于,具有通过烧蚀形成足够精细的图案的半导体制造装置和半导体装置的制造方法。1。一种半导体制造装置,其特征在于,包括在晶片表面上发射第一波长的光的光源和至少一个 第一波长的光的一部分通过蒸发而通过并除去由第一波长的光曝光的晶片的部分的材料,其中光源包括用于产生电子束的电子束产生装置和发光装置 用于发射比第一波长长的第二波长的光,其中第一波长的光是通过电子束中的电子与第二波长的光子碰撞而获得的康普顿散射光,导致电子的能量 给予光子和使用该设备的半导体器件制造方法 s。