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1. 发明授权

US06497992B1 Process for manufacturing semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件制造工艺
公开(公告)号：US06497992B1
公开(公告)日：2002-12-24
申请号：US09551615
申请日：2000-04-17
申请人： Takashi Yunogami , Shunji Sasabe , Kazuyuki Suko , Jun Abe , Takao Kumihashi , Fumio Murai
发明人： Takashi Yunogami , Shunji Sasabe , Kazuyuki Suko , Jun Abe , Takao Kumihashi , Fumio Murai
IPC分类号： G03F726
CPC分类号： H01L21/02071 , G03F7/40 , H01L21/0274 , H01L21/31122 , H01L21/31144 , H01L21/32139
摘要： In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.
摘要翻译：为了防止当通过干法蚀刻Pt膜或PZT膜而形成该图案时，可以防止低蒸气压的反应产物沉积在预定图案的侧壁上，具有圆形外部的抗蚀剂掩模54 当要沉积在半导体衬底50上的Pt膜53被干蚀刻时，使用其头部周边。此外，在该干蚀刻之后，进行适当程度的过蚀刻以完全去除留在图案侧的侧壁沉积膜55。抗蚀剂掩模54通过曝光和显影二苯甲酚酚醛清漆抗蚀剂而形成，随后通过加热固化，同时照射它，如果需要，用紫外线照射。

2. 发明授权

US6057081A Process for manufacturing semiconductor integrated circuit device 失效
公开(公告)号：US6057081A
公开(公告)日：2000-05-02
申请号：US935033
申请日：1997-09-22
申请人： Takashi Yunogami , Shunji Sasabe , Kazuyuki Suko , Jun Abe , Takao Kumihashi , Fumio Murai
发明人： Takashi Yunogami , Shunji Sasabe , Kazuyuki Suko , Jun Abe , Takao Kumihashi , Fumio Murai
IPC分类号： G03F7/26 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L21/02071 , H01L21/31122 , H01L21/31144 , H01L21/32139 , G03F7/40 , H01L21/0274
摘要： In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

3. 发明授权

US09121698B2 Electronic level device and level staff used for electronic level device 有权
标题翻译：用于电子水平仪的电子水平仪和液位人员
公开(公告)号：US09121698B2
公开(公告)日：2015-09-01
申请号：US13348538
申请日：2012-01-11
申请人： Kaoru Kumagai , Minoru Chiba , Jun Abe
发明人： Kaoru Kumagai , Minoru Chiba , Jun Abe
IPC分类号： G01C5/00 , G01C9/00 , G01C15/06
CPC分类号： G01C5/00 , G01C9/00 , G01C15/06
摘要： An electronic level includes a wide-angle lens system having a two-dimensional imaging element configured to form thereon a picture image including an image of a level staff assigned with a code pattern, an extraction part configured to extract the image of the level staff from the picture image, a height-level measurement value calculation part configured to obtain a height-level measurement value indicated by a portion of the code pattern in the image of the level staff extracted by the extraction part, the portion of the code pattern located at a collimation optical axis of the wide-angle lens system, and a calculation part configured to calculate a collimation height from the height-level measurement value.
摘要翻译：电子级包括具有二维成像元件的广角镜头系统，其被配置为在其上形成包括分配有代码图案的级别工作人员的图像的图像图像;提取部件，被配置为从图像图像，高度值测量值计算部分，被配置为获得由提取部分提取的级别员工的图像中的代码模式的一部分指示的高度级测量值，位于广角透镜系统的准直光轴，以及被配置为根据高度测量值计算准直高度的计算部。

4. 发明授权

US08821684B2 Substrate plasma processing apparatus and plasma processing method 有权
标题翻译：基板等离子体处理装置和等离子体处理方法
公开(公告)号：US08821684B2
公开(公告)日：2014-09-02
申请号：US12363070
申请日：2009-01-30
申请人： Akio Ui , Naoki Tamaoki , Takashi Ichikawa , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
发明人： Akio Ui , Naoki Tamaoki , Takashi Ichikawa , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
IPC分类号： C23F1/00 , C23C16/50 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32027 , H01J37/32045 , H01J37/32091
摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.
摘要翻译：衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

5. 发明授权

US08764288B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US08764288B2
公开(公告)日：2014-07-01
申请号：US13476264
申请日：2012-05-21
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01J5/00 , G01B9/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

6. 发明授权

US08747609B2 Plasma processing apparatus and shower head 有权
标题翻译：等离子处理装置和淋浴头
公开(公告)号：US08747609B2
公开(公告)日：2014-06-10
申请号：US12888664
申请日：2010-09-23
申请人： Hachishiro Iizuka , Jun Abe , Yuki Mochizuki
发明人： Hachishiro Iizuka , Jun Abe , Yuki Mochizuki
IPC分类号： H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3244 , H01J37/3266
摘要： A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
摘要翻译：一种等离子体处理装置，包括安装在用于处理基板的处理室内的淋浴喷头，面对用于将基板安装在其上的安装台，并通过多个气体排出孔向喷射基板喷射气体设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔，其形成为穿过所述淋浴喷头，从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元，其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。

7. 发明授权

US07952717B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US07952717B2
公开(公告)日：2011-05-31
申请号：US12043406
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01B9/02
CPC分类号： G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

8. 发明申请

US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN 有权
标题翻译：等离子体加工装置和温度测量方法及其使用的装置
公开(公告)号：US20100206482A1
公开(公告)日：2010-08-19
申请号：US12698616
申请日：2010-02-02
申请人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
发明人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
IPC分类号： C23F1/08 , G01J5/08 , G01K1/00 , C23C16/00
CPC分类号： H01L21/67248 , G01J5/0003 , G01J5/0007 , G01J5/041 , G01J5/045 , G01J5/048 , G01J5/08 , G01J5/0803 , G01J5/0806 , G01J5/0821 , G01J5/0846 , G01K11/00 , H01J2237/2001
摘要： A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
摘要翻译：一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

9. 发明申请

US20090293218A1 Connection Member In Wiper Blade 有权
标题翻译：雨刷连接件
公开(公告)号：US20090293218A1
公开(公告)日：2009-12-03
申请号：US12223058
申请日：2007-01-26
申请人： Masaru Fujiwara , Jun Abe , Ken Machida
发明人： Masaru Fujiwara , Jun Abe , Ken Machida
IPC分类号： B60S1/40
CPC分类号： B60S1/4009 , B60S1/4019 , B60S2001/4012
摘要： A connection member that includes right and left side walls; a shaft support portion that is swingably fitted onto a support shaft that is provided at the blade main body; upper and lower pieces that are formed so as to be continuous from the shaft support portion; and projections that come into sliding contact with inner side surfaces at the opening are formed on outer side surfaces of the right and left side walls, wherein: the shaft support portion and the upper piece are integrally formed so as to bridge the right and left side walls, the lower piece is formed so as to be separated from the right and left side walls by a groove, and outward projection amounts of the projections are larger at the lower piece than at the upper piece.
摘要翻译：包括右侧壁和左侧壁的连接构件; 轴支撑部，其可摆动地安装在设置在所述叶片主体上的支撑轴上; 形成为从轴支撑部连续的上下片; 并且在左右侧壁的外侧面形成有与开口部的内侧面滑动接触的突起，其中：轴支撑部和上部片整体形成为使左右侧壁部分形成为通过凹槽与左右侧壁分离，并且突出部的向外突出量比下部件处于较大的部分。

10. 发明授权

US07276150B2 Method of desulfurizing gas oil fraction, desulfurized gas oil, and desulfurizer for gas oil fraction 失效
$Method of desulfurizing gas oil fraction, desulfurized gas oil, and desulfurizer for gas oil fraction$
标题翻译：粗柴油馏分脱硫方法，脱硫瓦斯油，瓦斯油馏分脱硫剂
公开(公告)号：US07276150B2
公开(公告)日：2007-10-02
申请号：US10275038
申请日：2001-11-16
申请人： Shigeki Nagamatsu , Jun Abe , Akira Sugimoto , Makoto Inomata , Tetsuya Watanabe
发明人： Shigeki Nagamatsu , Jun Abe , Akira Sugimoto , Makoto Inomata , Tetsuya Watanabe
IPC分类号： C10L1/00 , C10G45/00
CPC分类号： C10G65/16 , B01J23/882 , C10G2300/1059 , C10G2300/202 , C10G2300/207 , C10G2400/06
摘要： The process for desulfurizing a gas oil fraction according to the invention comprises a low-boiling gas oil fraction hydrodesulfurization step (I) wherein a low-boiling gas oil fraction is desulsurized under the condition of a H2/Oil ratio of 70 to 200 Nm3/kl to obtain a treated oil, a high-boiling gas oil fraction hydrodesulfurization step (II) wherein a high-boiling gas oil fraction is desulsurized under the condition of a H2Oil ratio of 200 to 800 Nm3/kl to obtain a treated oil, and a step (III) wherein the treated oil obtained in the step (I) is mixed with the treated oil obtained in the step (II), and in this process, at least a part of a gas containing unreacted hydrogen in the step (II) is used for the hydrodesulfurization of the step (I).
摘要翻译：根据本发明的粗柴油馏分的脱硫方法包括低沸点瓦斯油馏分加氢脱硫步骤（I），其中低沸点瓦斯油馏分在H 2 N 2 / 油比为70〜200Nm 3 / kl，得到处理油，高沸点瓦斯油馏分加氢脱硫工序（II），其中高沸点瓦斯油馏分在条件下脱硫 H 2油比为200〜800Nm 3 / kl，得到处理油，和步骤（III），其中步骤（I）中得到的处理油为与步骤（II）中获得的处理油混合，并且在该方法中，将步骤（II）中的至少一部分含有未反应的氢的气体用于步骤（I）的加氢脱硫。

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