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1. 发明授权

US5536603A Phase shift mask and method of fabricating the same 失效
标题翻译：相移掩模及其制造方法
公开(公告)号：US5536603A
公开(公告)日：1996-07-16
申请号：US359547
申请日：1994-12-20
申请人： Takashi Tsuchiya , Masami Watase , Katsuya Okumura , Toru Watanabe
发明人： Takashi Tsuchiya , Masami Watase , Katsuya Okumura , Toru Watanabe
IPC分类号： G03F1/00 , G03F1/29 , G03F1/30 , G03F1/32 , G03F1/46 , G03F9/00
CPC分类号： G03F1/30 , G03F1/29 , G03F1/46 , G03F1/32
摘要： A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.
摘要翻译：光刻胶图案形成在石英基片上。将石英衬底浸入氢氟酸的氧化硅过饱和溶液中，从过饱和溶液中沉淀出氧化硅，由此在未被光致抗蚀剂图案覆盖的石英衬底的暴露表面上形成SiO 2膜。之后，通过氧等离子体将光致抗蚀剂图案灰化，除去灰化图案。保留在石英衬底上的SiO 2膜用作移相器。

2. 发明授权

US5489336A Apparatus for forming a silicon oxide film on a silicon wafer 失效
标题翻译：用于在硅晶片上形成氧化硅膜的设备
公开(公告)号：US5489336A
公开(公告)日：1996-02-06
申请号：US329651
申请日：1994-10-25
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05C3/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译：公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜。

3. 发明授权

US5395645A Method for forming a silicon oxide film on a silicon waffer 失效
标题翻译：在硅胶上形成氧化硅膜的方法
公开(公告)号：US5395645A
公开(公告)日：1995-03-07
申请号：US928070
申请日：1992-08-11
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05D1/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译：公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜。

4. 发明授权

US4954218A Method for etching a pattern 失效
标题翻译：腐蚀图案的方法
公开(公告)号：US4954218A
公开(公告)日：1990-09-04
申请号：US389681
申请日：1989-08-04
申请人： Katsuya Okumura , Tohru Watanabe , Masami Watase
发明人： Katsuya Okumura , Tohru Watanabe , Masami Watase
IPC分类号： H01L21/302 , H01L21/033 , H01L21/208 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/3213 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/76838 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/316 , H01L21/32 , H01L21/32139 , H01L21/76802
摘要： A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

5. 发明授权

US5620815A Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
标题翻译：曝光掩模，曝光掩模基板，其制造方法以及基于曝光掩模形成图案的方法
公开(公告)号：US5620815A
公开(公告)日：1997-04-15
申请号：US471782
申请日：1995-06-06
申请人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
发明人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.
摘要翻译：通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分使用第二种图案作为掩模。半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺蚀刻剂此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的面积起到屏蔽曝光光的作用，可以防止太窄的图案或不充分的焦深。

6. 发明授权

US06433428B1 Semiconductor device with a dual damascene type via contact structure and method for the manufacture of same 失效
标题翻译：具有双镶嵌型通孔接触结构的半导体器件及其制造方法
公开(公告)号：US06433428B1
公开(公告)日：2002-08-13
申请号：US09086958
申请日：1998-05-29
申请人： Toru Watanabe , Katsuya Okumura
发明人： Toru Watanabe , Katsuya Okumura
IPC分类号： H01L2348
CPC分类号： H01L21/76847 , H01L21/76805 , H01L21/76807 , H01L21/76877 , H01L21/76882 , H01L23/53214 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： The via contact structure is rendered into a dual damascene type via contact structure having a wide groove and a via contact hole lying below the wide groove, and the interior of the lower via contact hole is filled up with a filling material composed of tungsten, while, the interior of the upper groove is filled up with aluminum. Since the interior of the lower via contact hole is thus filled up with a filling material comprising tungsten, aluminum which has a low reflowability may be used only in the upper groove. As for the filling material for filling up the wide groove, the wide groove can be filled up sufficiently well even with aluminum which is not high in reflowability. By combining the filling of the via contact hole with tungsten and the filling of the groove with aluminum as mentioned above, a via contact filling with a high aspect ratio can be realized. Further, the problem or drawback that, at the time of forming the second metal wiring layer, the first metal wiring layer may be melted due to the high-temperature heat treatment performed for depositing the metal material is eliminated, and thus, it becomes possible to realize a dual damascene type via contact structure which can be applied to a multi-layer wiring structure.
摘要翻译：通孔接触结构被制成具有宽槽的通孔接触结构和位于宽槽下方的通孔接触孔的双镶嵌型通孔接触结构，并且下通孔接触孔的内部填充有由钨构成的填充材料，同时，上槽的内部填充有铝。由于下通孔接触孔的内部填充有包含钨的填充材料，所以具有低回流性的铝可以仅在上槽中使用。对于用于填充宽槽的填充材料，即使使用不可回流的铝的情况下，也可以充分地填充宽槽。通过将通孔接触孔的填充与钨结合，并且如上所述用铝填充槽，可以实现填充高纵横比的通孔接头。此外，在形成第二金属布线层时，第一金属布线层由于进行用于沉积金属材料的高温热处理而可能熔化的问题和缺陷被消除，因此，实现可以应用于多层布线结构的双镶嵌型通孔接触结构。

7. 发明授权

US5679484A Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
公开(公告)号：US5679484A
公开(公告)日：1997-10-21
申请号：US757957
申请日：1996-11-25
申请人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
发明人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask. The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant. Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

8. 发明授权

US5491425A Apparatus for evaluating characteristics of semiconductor device and method of evaluating characteristics of semiconductor device using the same 失效
标题翻译：用于评估半导体器件的特性的装置和使用其的半导体器件的特性评估方法
公开(公告)号：US5491425A
公开(公告)日：1996-02-13
申请号：US215774
申请日：1994-03-22
申请人： Toru Watanabe , Yuri Yonekura , Katsuya Okumura
发明人： Toru Watanabe , Yuri Yonekura , Katsuya Okumura
IPC分类号： G01R1/073 , G01R1/067 , G01R31/26 , H01L21/66 , G01R1/06
CPC分类号： G01R1/06783
摘要： A probe is attached to a support plate vertically to the surface of the support plate. A drop of a molten metal is formed at a tip portion of the probe. The support plate has a heater for setting the temperature of the probe and the drop of the molten metal at the tip portion of the probe. The probe is situated at a position corresponding to a position of an electrode of an LSI. The probe is connected to a measuring device for evaluating characteristics of the LSI by wiring. The drop of the molten metal connects the probe and the electrode of the LSI electrically.
摘要翻译：探针垂直于支撑板的表面附接到支撑板。在探针的尖端处形成一滴熔融金属。支撑板具有用于将探针的温度和熔融金属的液滴设置在探针的尖端部分的加热器。探针位于与LSI的电极的位置对应的位置。探头连接到用于通过布线评估LSI的特性的测量装置。熔融金属液滴将探针和LSI的电极电连接。

9. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

10. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

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