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1. 发明授权

US08293646B2 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US08293646B2
公开(公告)日：2012-10-23
申请号：US11667078
申请日：2005-11-02
申请人： Takashi Ozaki , Osamu Kasahara , Takaaki Noda , Kiyohiko Maeda , Atsushi Moriya , Minoru Sakamoto
发明人： Takashi Ozaki , Osamu Kasahara , Takaaki Noda , Kiyohiko Maeda , Atsushi Moriya , Minoru Sakamoto
IPC分类号： H01L21/02
CPC分类号： C23C16/54 , C23C16/4408 , C30B25/02 , C30B29/06 , H01L21/02046 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/67017 , H01L21/67109
摘要： A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.
摘要翻译：在基板和薄膜之间以低的氧 - 碳密度形成高质量的界面，同时防止对基板的热损伤并增加热预算。该方法包括将晶片装载到反应炉中的步骤，在反应炉中预处理晶片的步骤，在反应炉中进行预处理的晶片的主要处理的步骤，以及将晶片从反应炉主要加工后。在从预处理步骤结束到主处理开始的时段内，至少在反应炉内部真空排气期间，将氢气连续供给到反应炉。

2. 发明申请

US20090117752A1 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US20090117752A1
公开(公告)日：2009-05-07
申请号：US11667078
申请日：2005-11-02
申请人： Takashi Ozaki , Osamu Kasahara , Takaaki Noda , Kiyohiko Maeda , Atsushi Moriya , Minoru Sakamoto
发明人： Takashi Ozaki , Osamu Kasahara , Takaaki Noda , Kiyohiko Maeda , Atsushi Moriya , Minoru Sakamoto
IPC分类号： H01L21/02 , F23N5/22
CPC分类号： C23C16/54 , C23C16/4408 , C30B25/02 , C30B29/06 , H01L21/02046 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/67017 , H01L21/67109
摘要： A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.
摘要翻译：在基板和薄膜之间以低的氧 - 碳密度形成高质量的界面，同时防止对基板的热损伤并增加热预算。该方法包括将晶片装载到反应炉中的步骤，在反应炉中预处理晶片的步骤，在反应炉中进行预处理的晶片的主要处理的步骤，以及将晶片从反应炉主要加工后。在从预处理步骤结束到主处理开始的时段内，至少在反应炉内部真空排气期间，将氢气连续供给到反应炉。

3. 发明授权

US08084369B2 Producing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的生产方法
公开(公告)号：US08084369B2
公开(公告)日：2011-12-27
申请号：US12404003
申请日：2009-03-13
申请人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
发明人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which is in proximity to the inner wall of the processing chamber and which corresponds to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.
摘要翻译：公开了一种通过将多个基板转移到处理室中而制造的半导体器件的制造方法，向处理室供给含氧气体和含氢气体，以通过氧化处理多个基板，并且将多个基板氧化处理的基板从处理室出来，其中在氧化处理中，含氢气体从位于处理室的内壁附近并对应于基板的区域的多个位置供应其中所述多个基板布置在所述处理室中。

4. 发明授权

US07879400B2 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface 有权
标题翻译：基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
公开(公告)号：US07879400B2
公开(公告)日：2011-02-01
申请号：US11907270
申请日：2007-10-10
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , Y10T428/1259 , Y10T428/265
摘要： There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
摘要翻译：提供了一种配备有金属部件的基板处理装置，其金属表面的至少一部分暴露于处理室的内部，并在低于大气压的压力下进行烘烤处理。作为这种烘烤处理的结果，在上述金属组分的表面上形成不与各种反应性气体反应并且可以阻止金属扩散的膜。

5. 发明申请

US20060150904A1 Substrate-processing apparatus and method of producing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20060150904A1
公开(公告)日：2006-07-13
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在所述小室（43）中的用于允许所述第一气体流入所述反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的用于将第二气体供应到所述反应炉（39）中的进料管（a1）。诸如NH 4 Cl的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产产量因此增加。

6. 发明授权

US08304328B2 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US08304328B2
公开(公告)日：2012-11-06
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/00
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

7. 发明授权

US08282737B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08282737B2
公开(公告)日：2012-10-09
申请号：US13239889
申请日：2011-09-22
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

8. 发明申请

US20090188431A1 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090188431A1
公开(公告)日：2009-07-30
申请号：US12382082
申请日：2009-03-09
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

9. 发明申请

US20090087964A1 Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：US20090087964A1
公开(公告)日：2009-04-02
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

10. 发明申请

US20070157882A1 Producing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的生产方法
公开(公告)号：US20070157882A1
公开(公告)日：2007-07-12
申请号：US10549938
申请日：2004-08-25
申请人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
发明人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
IPC分类号： C23C16/00
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates (1) are placed in the process chamber (4), a step for oxidizing the substrates (1) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber (4), and a step for carrying the thus-processed substrates (1) out of the process chmaber (4).
摘要翻译：公开了一种半导体器件的制造方法，其包括在处理室（4）中承载多个基板（1）的步骤，从承载的基板（1）的上游侧供给含氧气体的步骤在处理室（4）中，从对应于在基板（1）被放置在处理室（4）的区域内的位置的至少一个位置供给含氢气体的步骤，用于氧化基板（1）通过使含氧气体与处理室（4）中的含氢气体反应，以及将由此处理过的基板（1）运送到处理室（4）中的步骤。

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