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1. 发明申请

US20090087964A1 Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：US20090087964A1
公开(公告)日：2009-04-02
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

2. 发明授权

US08304328B2 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US08304328B2
公开(公告)日：2012-11-06
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/00
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

3. 发明申请

US20080090415A1 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface 有权
标题翻译：基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
公开(公告)号：US20080090415A1
公开(公告)日：2008-04-17
申请号：US11907270
申请日：2007-10-10
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/4404 , Y10T428/1259 , Y10T428/265
摘要： There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
摘要翻译：提供了一种配备有金属部件的基板处理装置，其金属表面的至少一部分暴露于处理室的内部，并在低于大气压的压力下进行烘烤处理。作为这种烘烤处理的结果，在上述金属组分的表面上形成不与各种反应性气体反应并且可以阻止金属扩散的膜。

4. 发明授权

US07879400B2 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface 有权
标题翻译：基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
公开(公告)号：US07879400B2
公开(公告)日：2011-02-01
申请号：US11907270
申请日：2007-10-10
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , Y10T428/1259 , Y10T428/265
摘要： There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
摘要翻译：提供了一种配备有金属部件的基板处理装置，其金属表面的至少一部分暴露于处理室的内部，并在低于大气压的压力下进行烘烤处理。作为这种烘烤处理的结果，在上述金属组分的表面上形成不与各种反应性气体反应并且可以阻止金属扩散的膜。

5. 发明授权

US08679989B2 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion 有权
标题翻译：制造半导体器件的方法，包括从处理室和供应部分去除沉积物
公开(公告)号：US08679989B2
公开(公告)日：2014-03-25
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

6. 发明申请

US20090305517A1 Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090305517A1
公开(公告)日：2009-12-10
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/469 , C23C16/46
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

7. 发明申请

US20100246099A1 ELECTROLYTIC CAPACITOR AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：电解电容器及其制造方法
公开(公告)号：US20100246099A1
公开(公告)日：2010-09-30
申请号：US12725854
申请日：2010-03-17
申请人： Kentaro Naka , Takahiro Maeda
发明人： Kentaro Naka , Takahiro Maeda
IPC分类号： H01G9/14 , B23K31/02 , B32B38/04
CPC分类号： H01G2/14 , H01G9/012 , H01G9/15 , H01L2224/48247 , H01L2224/48471 , H01L2924/00014 , H01L2924/181 , Y10T156/1052 , H01L2924/00012 , H01L2224/4554
摘要： A solid electrolytic capacitor includes a capacitor element, an external conduction member and a fuse conductor. The capacitor element includes a porous sintered body made of valve metal, an anode wire projecting from the porous sintered body, and a dielectric layer and a solid electrolyte layer covering the porous sintered body. The fuse conductor electrically connects the external conduction member and one of the anode wire and the solid electrolyte layer to each other. The fuse conductor is made of a metal containing one of Au—Su-based alloy, Zn—Al-based alloy, Sn—Ag—Cu-based alloy, Sn—Cu—Ni—based alloy and Sn—Sb—based alloy.
摘要翻译：固体电解电容器包括电容器元件，外部导电构件和保险丝导体。电容器元件包括由阀金属制成的多孔烧结体，从多孔烧结体突出的阳极线以及覆盖多孔烧结体的电介质层和固体电解质层。保险丝导体将外部导电构件与阳极线和固体电解质层中的一个彼此电连接。熔丝导体由含有Au-Su系合金，Zn-Al系合金，Sn-Ag-Cu系合金，Sn-Cu-Ni系合金，Sn-Sb系合金等的金属构成。

8. 发明申请

US20080094421A1 Information display apparatus and information displaying method 审中-公开
标题翻译：信息显示装置和信息显示方法
公开(公告)号：US20080094421A1
公开(公告)日：2008-04-24
申请号：US11985837
申请日：2007-11-16
申请人： Takahiro Maeda
发明人： Takahiro Maeda
IPC分类号： G09G5/00
CPC分类号： G09G5/14 , G06F3/0481 , G06F3/0482 , G06F3/04845 , G06F9/451
摘要： Even when the display contents on the display screen are changed, the entire or a part of the display item is displayed, given a higher priority. When a part of image (20) is displayed in a displayable area (14 or 15) that displays a display item on a display screen, a user designates a portion, which he or she desires to keep it displayed, as a prioritized display section (21). When a change of size or the like of the displayable area (14 or 15) is recognized, in response to the change, a part of image (20, 22 or 23) is extracted so that the designated prioritized display section (21) is displayed in the displayable area (14 or 15), and then, it is placed in the displayable area (14 or 15).
摘要翻译：即使显示画面上的显示内容发生变化，显示项目的全部或一部分被显示为更高的优先级。当图像（20）的一部分显示在显示屏幕上显示显示项目的可显示区域（14或15）中时，用户指定他或她希望保持显示的部分作为优先显示部分（21）。当识别到可显示区域（14或15）的尺寸等的改变时，响应于改变，提取图像（20,22或23）的一部分，使得指定的优先显示部分（21）为显示在可显示区域（14或15）中，然后放置在可显示区域（14或15）中。

9. 发明申请

US20080050558A1 CERAMIC THIN PLATE MEMBER 有权
标题翻译：陶瓷薄板会员
公开(公告)号：US20080050558A1
公开(公告)日：2008-02-28
申请号：US11843208
申请日：2007-08-22
申请人： Makoto Ohmori , Natsumi Shimogawa , Takahiro Maeda , Tsutomu Nanataki
发明人： Makoto Ohmori , Natsumi Shimogawa , Takahiro Maeda , Tsutomu Nanataki
IPC分类号： B32B3/30
CPC分类号： H01M8/122 , H01M4/9033 , H01M4/9066 , H01M8/12 , Y10T428/24355
摘要： A thin plate member 10 has a uniform thickness of not less than 5 μm and not more than 100 μm, includes at least a ceramic sheet, and is formed by sintering. The thin plate member 10 has plural convex portions 11 protruding from one plane P of the thin plate member 10, and plural concave portions 12 caved in from the plane P. Accordingly, the deflection amount obtained when the thin plate member 10 is supported at a predetermined support section of the thin plate member 10 and a load is applied to a load applying section, which is other than the support section, of the thin plate member 10 in a direction orthogonal to the plane P is smaller than the deflection amount of a thin plate member that is flat without having the convex portion 11 and the concave portion 12. That is, the thin plate member 10 which is difficult to be deformed can be provided.
摘要翻译：薄板构件10具有不小于5μm且不大于100μm的均匀厚度，至少包括陶瓷片，并且通过烧结形成。薄板构件10具有从薄板构件10的一个平面P突出的多个凸部11以及从平面P中凹陷的多个凹部12.因此，当薄板构件10支撑在薄板构件10的预定支撑部分和负载施加到薄板构件10的与平面P正交的方向上的不同于支撑部分的载荷施加部分小于平坦的薄板构件，不具有凸部11和凹部12。也就是说，可以提供难以变形的薄板构件10。

10. 发明授权

US5959831A Capacitor element for solid electrolytic capacitor 失效
标题翻译：固体电解电容器电容元件
公开(公告)号：US5959831A
公开(公告)日：1999-09-28
申请号：US938824
申请日：1997-09-26
申请人： Takahiro Maeda , Shouichi Yanagi , Chojiro Kuriyama
发明人： Takahiro Maeda , Shouichi Yanagi , Chojiro Kuriyama
IPC分类号： H01G9/052 , H01G9/00 , H01G9/04 , H01G9/048
CPC分类号： H01G9/052
摘要： A capacitor element for a solid electrolytic capacitor includes a capacitor chip which is a compacted mass of valve metal powder, and an anode wire projecting from an end face of the capacitor chip. The capacitor chip includes a chamfer portion located adjacent to and surrounding the end face. Typically, the capacitor chip is square in cross section, and the chamfer portion includes a quadrilaterally arranged group of chamfer faces.
摘要翻译：用于固体电解电容器的电容器元件包括：电容器芯片，其是阀金属粉末的压实块，以及从电容器芯片的端面突出的阳极线。电容器芯片包括邻近并包围端面的倒角部分。通常，电容器芯片的横截面为正方形，并且倒角部分包括四边形排列的倒角面组。

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