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1. 发明授权

US08304328B2 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US08304328B2
公开(公告)日：2012-11-06
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/00
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

2. 发明授权

US07879400B2 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface 有权
标题翻译：基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
公开(公告)号：US07879400B2
公开(公告)日：2011-02-01
申请号：US11907270
申请日：2007-10-10
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , Y10T428/1259 , Y10T428/265
摘要： There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
摘要翻译：提供了一种配备有金属部件的基板处理装置，其金属表面的至少一部分暴露于处理室的内部，并在低于大气压的压力下进行烘烤处理。作为这种烘烤处理的结果，在上述金属组分的表面上形成不与各种反应性气体反应并且可以阻止金属扩散的膜。

3. 发明申请

US20080090415A1 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface 有权
标题翻译：基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
公开(公告)号：US20080090415A1
公开(公告)日：2008-04-17
申请号：US11907270
申请日：2007-10-10
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/4404 , Y10T428/1259 , Y10T428/265
摘要： There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
摘要翻译：提供了一种配备有金属部件的基板处理装置，其金属表面的至少一部分暴露于处理室的内部，并在低于大气压的压力下进行烘烤处理。作为这种烘烤处理的结果，在上述金属组分的表面上形成不与各种反应性气体反应并且可以阻止金属扩散的膜。

4. 发明申请

US20090087964A1 Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：US20090087964A1
公开(公告)日：2009-04-02
申请号：US12223718
申请日：2007-03-15
申请人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
发明人： Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki , Akihito Yoshino , Yasunobu Koshi , Yuji Urano
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L21/30 , C23C16/345 , C23C16/4405 , C23C16/45574 , C23C16/45578 , C23C16/52 , H01L21/3185
摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.
摘要翻译：为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧，布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

5. 发明授权

US08679989B2 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion 有权
标题翻译：制造半导体器件的方法，包括从处理室和供应部分去除沉积物
公开(公告)号：US08679989B2
公开(公告)日：2014-03-25
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

6. 发明申请

US20090305517A1 Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090305517A1
公开(公告)日：2009-12-10
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/469 , C23C16/46
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

7. 发明申请

US20120006268A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：US20120006268A1
公开(公告)日：2012-01-12
申请号：US13239889
申请日：2011-09-22
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

8. 发明授权

US08057599B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
公开(公告)号：US08057599B2
公开(公告)日：2011-11-15
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

9. 发明授权

US08043431B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08043431B2
公开(公告)日：2011-10-25
申请号：US12382082
申请日：2009-03-09
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

10. 发明授权

US07871938B2 Producing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的生产方法
公开(公告)号：US07871938B2
公开(公告)日：2011-01-18
申请号：US12403974
申请日：2009-03-13
申请人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
发明人： Takashi Ozaki , Kazuhiro Yuasa , Kiyohiko Maeda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein the hydrogen-containing gas is supplied from a plurality of locations of a region corresponding to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.
摘要翻译：本发明公开了一种半导体器件的制造方法，该半导体器件通过将多个衬底转移到处理室中，将含氧气体和含氢气体供给到处于加热状态的处理室中，以通过氧化处理多个衬底，并且将多个氧化处理的基板从处理室转移出来，其中，从对应于多个基板布置在处理室中的基板布置区域的区域的多个位置供给含氢气体。

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