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    • 2. 发明授权
    • Belt for high load transmission
    • 皮带用于高负载传输
    • US4950212A
    • 1990-08-21
    • US235162
    • 1988-08-23
    • Takashi MasudaKengiro HashimotoShinichi TakagiMasayuki Tanaka
    • Takashi MasudaKengiro HashimotoShinichi TakagiMasayuki Tanaka
    • F16G5/16F16G1/22
    • F16G5/16F16G5/166
    • A power transmission belt having longitudinally spaced pairs of blocks on the opposite surfaces of a neutral belt portion thereof. The blocks are formed of hard synthetic resin materials having fibers distributed therein. The fibers may be provided in the form of distributed short fibers, fabrics, and one or more different types of fibers may be utilized in the respective blocks. The fibers include carbon fibers, aramid fibers, and silicon carbide fibers. The neutral belt is provided with longitudinally spaced projections on the upper and lower surfaces thereof and the blocks are provided with complementary recesses receiving the projections. The recesses are preferably deeper than the height of the projections, whereby the distal surfaces of the blocks may be urged with high frictional engagement against the flat surfaces of the neutral belt. The blocks are resiliently clamped to the neutral belt and the clamping forces are urged through the neutral belt to the tensile cord carried therein for further improved stabilization of the blocks on the neutral belt.
    • 一种动力传动带,在其中性带部分的相对表面上具有纵向隔开的一对块块。 这些块由具有分布在其中的纤维的硬质合成树脂材料形成。 纤维可以以分布的短纤维,织物的形式提供,并且一个或多个不同类型的纤维可以用于各个块中。 纤维包括碳纤维,芳族聚酰胺纤维和碳化硅纤维。 中性带在其上表面和下表面上设置有纵向间隔的突起,并且块设置有接收突起的互补凹部。 凹部优选地比突起的高度更深,由此可以以与中立带的平坦表面高摩擦接合的方式推动块的远侧表面。 这些块被弹性地夹紧到中性带上,并且夹紧力被推动通过中性带到其上承载的拉力绳,以进一步改善中性带上的块的稳定性。
    • 9. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06690043B1
    • 2004-02-10
    • US09717039
    • 2000-11-22
    • Koji UsudaShinichi Takagi
    • Koji UsudaShinichi Takagi
    • H01L310328
    • H01L29/78696H01L29/1054H01L29/66742H01L29/78681H01L29/78687
    • A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the first semiconductor layer, and a MISFET formed on the second semiconductor layer. Since the MISFET is formed in a strained Si layer, electrons are prevented from scattering in a channel region, improving the electron mobility. Furthermore, since the MISFET is formed in a thin SOI layer having a thickness of 100 nm or less, it is possible to reduce a parasitic capacitance in addition to the improvement of the electron mobility. As a result, the MISFET excellent in drivability can be obtained.
    • 半导体器件包括基底基板,形成在基板上的绝缘膜,形成在绝缘膜上的未掺杂的第一和晶格弛豫半导体层,具有拉伸应变并形成在第一半导体层上的第二半导体层,以及MISFET 形成在第二半导体层上。 由于MISFET形成在应变Si层中,所以防止电子在沟道区域中散射,提高电子迁移率。 此外,由于MISFET形成在厚度为100nm以下的薄SOI层中,除了改善电子迁移率之外,还可以减小寄生电容。 结果,可以获得驾驶性优异的MISFET。