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1. 发明授权

US5110408A Process for etching 失效
标题翻译：蚀刻工艺
公开(公告)号：US5110408A
公开(公告)日：1992-05-05
申请号：US658254
申请日：1991-02-20
申请人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
发明人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
摘要翻译：本发明涉及栅极膜，钨膜，硅膜等的蚀刻。在本发明中，使用包括由还原氟化物气体，烃气体和卤素组成的混合物的蚀刻气体具有比待蚀刻材料更大的原子直径的气体或由还原性氟化物气体和含Cl的烃气体组成的混合物，该方法包括用蚀刻气体进行各向异性腐蚀蚀刻的步骤（还原氟化物气体），通过沉积气体（烃气体）形成保护膜的步骤，以及通过与保护膜反应的气体（卤素气体）除去形成为保护膜的多余的沉积物的步骤或含Cl的氢气），其中通过在侧壁上形成保护膜进行各向异性蚀刻，同时除去形成为保护膜的多余的沉积物，从而能够进行各向异性蚀刻准确度好

2. 发明授权

US06189127B1 Method and apparatus for pat 2 bus decoding 有权
标题翻译：拍照2总线解码的方法和装置
公开(公告)号：US06189127B1
公开(公告)日：2001-02-13
申请号：US09185252
申请日：1998-11-02
申请人： Calvin Fang , Clayton Backhaus , Graham Harding , Kazuo Takata
发明人： Calvin Fang , Clayton Backhaus , Graham Harding , Kazuo Takata
IPC分类号： G06F1100
CPC分类号： G06F11/221
摘要： A system for testing a bus is described. The system utilizes a tester which includes decompression circuitry to decompress digitized ADPCM signals transferred over a bus, data in the decompressed ADPCM signal is used to determine whether data losses or transmission errors are occurring on the bus. When such errors occur, the tester transmits a warning signal.
摘要翻译：描述了一种用于测试总线的系统。该系统利用包括解压缩电路解压缩通过总线传送的数字化ADPCM信号的测试器，解压缩的ADPCM信号中的数据用于确定总线上是否发生数据丢失或传输错误。当发生这种错误时，测试仪发送警告信号。

3. 发明申请

US20070048954A1 Method for etching and apparatus for etching 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20070048954A1
公开(公告)日：2007-03-01
申请号：US11505375
申请日：2006-08-17
申请人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
发明人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
IPC分类号： H01L21/336
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.
摘要翻译：在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频偏压被间歇地施加到SOI衬底。在施加步骤中，高频偏置是时间调制的高频电。根据蚀刻方法，可以提高屈服率和生产率。

4. 发明申请

US20070080136A1 Etching method and etching equipment 审中-公开
标题翻译：蚀刻方法和蚀刻设备
公开(公告)号：US20070080136A1
公开(公告)日：2007-04-12
申请号：US11288105
申请日：2005-11-29
申请人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
发明人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
IPC分类号： H01B13/00 , H01L21/306 , H01L21/461 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/76898
摘要： The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.
摘要翻译：本发明提供一种用于实现沟槽蚀刻的蚀刻方法，而不会在保持高蚀刻速率的同时对沟槽的侧壁造成任何损坏。等离子体蚀刻方法涉及通过在硅衬底或具有氧化硅电介质层的硅衬底上形成硅沟槽来形成沟槽或孔，该混合气体等离子体包含SF6和O2的混合气体或SF6的混合气体，O 2和SiF 4，并且向其中加入含有氢气的气体在混合气体的总气体流量的5至16％（浓度百分比）的范围内。

5. 发明授权

US5796185A Circuit card present sense and protective power supply inhibit for airborne application of ATM switch unit 失效
标题翻译：电路卡存在感知和保护电源，禁止ATM交换机的机载应用
公开(公告)号：US5796185A
公开(公告)日：1998-08-18
申请号：US732526
申请日：1996-10-15
申请人： Kazuo Takata , James Bruce Whitehouse , Bruce Robert Ferguson
发明人： Kazuo Takata , James Bruce Whitehouse , Bruce Robert Ferguson
IPC分类号： G06F13/40 , H04B7/185 , H04L12/56 , H04Q11/04 , G06F13/00
CPC分类号： H04L49/405 , G06F13/4081 , H04B7/18506 , H04Q11/0478 , Y10S323/908 , Y10T307/937 , Y10T307/944
摘要： A system on an aircraft that eliminates hot-swapping of circuit boards to prevent damage to the circuit board connector interfaces. The system supplies power to a circuit card only when there is an effective coupling between a circuit card connector and an opposite mating connector. A power control circuit responds to a card present signal which indicates when the circuit card connector is coupled to the opposite mating connector. A logic circuit converts the card present signal to a power supply enable signal. A main power supply receives the power supply enable signal and provides power to the circuit card only when the circuit card connector and the opposite mating connector are appropriately coupled.
摘要翻译：飞机上的系统，可消除电路板的热插拔，以防止损坏电路板连接器接口。只有当电路卡连接器和相对的配对连接器之间有有效耦合时，系统才能向电路卡供电。电源控制电路响应卡存在信号，其指示电路卡连接器何时耦合到相对的配合连接器。逻辑电路将卡存在信号转换成电源使能信号。主电源接收电源使能信号，并且只有当电路卡连接器和相对的配对连接器适当耦合时才向电路卡供电。

6. 发明授权

US08288287B2 Etching method and etching equipment 有权
标题翻译：蚀刻方法和蚀刻设备
公开(公告)号：US08288287B2
公开(公告)日：2012-10-16
申请号：US12054095
申请日：2008-03-24
申请人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
发明人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/76898
摘要： The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.
摘要翻译：本发明提供一种用于实现沟槽蚀刻的蚀刻方法，而不会在保持高蚀刻速率的同时对沟槽的侧壁造成任何损坏。等离子体蚀刻方法涉及通过在硅衬底或具有氧化硅电介质层的硅衬底上形成硅沟槽来形成沟槽或孔，该混合气体等离子体包含SF6和O2的混合气体或SF6的混合气体，O 2和SiF 4，并且向其中加入含有氢气的气体在混合气体的总气体流量的5至16％（浓度百分比）的范围内。

7. 发明授权

US07642194B2 Method for etching and apparatus for etching 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US07642194B2
公开(公告)日：2010-01-05
申请号：US11505375
申请日：2006-08-17
申请人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
发明人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.
摘要翻译：在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频偏压被间歇地施加到SOI衬底。在施加步骤中，高频偏置是时间调制的高频电。根据蚀刻方法，可以提高屈服率和生产率。

8. 发明授权

US06709984B2 Method for manufacturing semiconductor device 失效
公开(公告)号：US06709984B2
公开(公告)日：2004-03-23
申请号：US10216720
申请日：2002-08-13
申请人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
发明人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
IPC分类号： H01L21311
CPC分类号： H01L21/3086 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76232
摘要： A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

9. 发明授权

US5907827A Channel synchronized audio data compression and decompression for an in-flight entertainment system 失效
标题翻译：频道同步音频数据压缩和解压缩为一个机上娱乐系统
公开(公告)号：US5907827A
公开(公告)日：1999-05-25
申请号：US787690
申请日：1997-01-23
申请人： Calvin Fang , Clayton Backhaus , Mike Densham , Daniel Lotocky , Kazuo Takata
发明人： Calvin Fang , Clayton Backhaus , Mike Densham , Daniel Lotocky , Kazuo Takata
IPC分类号： H04H20/62 , H04S3/00 , G10L3/02 , H04J3/06
CPC分类号： H04H20/62 , H04S3/00
摘要： In an In-Flight Entertainment System (IFES), an audio distribution system transmits and synchronizes an audio data stream from multiple audio channels using the Adaptive Differential Pulse Code Modulation (ADPCM) technique for efficient transmission and preventing loss of synchronization. An encoder digitizes the analog audio signals, compresses the digital data, generates the synchronization parameters, including synchronization data for a selected channel, and creates a data frame to be transmitted to a number of decoders. Each decoder detects the synchronization header, extracts the compressed data patterns from the passenger selections, updates the ADPCM synchronization parameters, decompresses the compressed data patterns, and converts the digital audio data to analog audio signals to be delivered to the passenger seats.
摘要翻译：在飞行娱乐系统（IFES）中，音频分配系统使用自适应差分脉冲编码调制（ADPCM）技术来传输和同步来自多个音频通道的音频数据流，用于有效传输并防止同步丢失。编码器对模拟音频信号进行数字化，压缩数字数据，产生同步参数，包括所选通道的同步数据，并创建要发送到多个解码器的数据帧。每个解码器检测同步报头，从乘客选择中提取压缩数据模式，更新ADPCM同步参数，对压缩数据模式进行解压缩，并将数字音频数据转换为模拟音频信号以传送到乘客座位。

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