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1. 发明申请

US20120067522A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20120067522A1
公开(公告)日：2012-03-22
申请号：US13022232
申请日：2011-02-07
申请人： Takahiro Shimomura , Yutaka Kudou , Masakazu Isozaki , Takashi Uemura
发明人： Takahiro Shimomura , Yutaka Kudou , Masakazu Isozaki , Takashi Uemura
IPC分类号： C23F1/08 , B05C13/00 , B05C11/00
CPC分类号： H01L21/67167 , H01L21/67109
摘要： A vacuum processing apparatus having an atmospheric-pressure transport chamber for conveying samples, lock chambers that accommodate the samples conveyed in and have an ambient capable of being switched between an atmospheric ambient and a vacuum ambient, a vacuum transport chamber coupled to the lock chambers, and at least one vacuum chamber for processing the samples. The apparatus further includes cooling portions operable to cool the high-temperature samples processed by the vacuum chamber. Each cooling portion has: a sample stage over which the high-temperature samples are placed and which has a coolant channel; gas-blowing tubes disposed closer to the inlet/exit port and acting to blow gas toward the sample stage; and an exhaust port disposed on the opposite side of the sample stage with regard to the inlet/exit port and acting to discharge the gas blown from the gas-blowing tubes.
摘要翻译：一种真空处理装置，具有用于输送样品的大气压输送室，容纳输送的样品的锁定室，以及能够在大气环境和真空环境之间切换的环境，耦合到锁定室的真空输送室，以及用于处理样品的至少一个真空室。该装置还包括可操作以冷却由真空室处理的高温样品的冷却部分。每个冷却部分具有：样品台，高温样品放置在该样品台上，并具有冷却剂通道; 设置在入口/出口附近并用于向样品台吹气的气体吹送管; 以及排气口，其相对于入口/出口设置在样品台的相对侧上，并用于排出从气体吹送管吹出的气体。

2. 发明申请

US20070048954A1 Method for etching and apparatus for etching 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20070048954A1
公开(公告)日：2007-03-01
申请号：US11505375
申请日：2006-08-17
申请人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
发明人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
IPC分类号： H01L21/336
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.
摘要翻译：在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频偏压被间歇地施加到SOI衬底。在施加步骤中，高频偏置是时间调制的高频电。根据蚀刻方法，可以提高屈服率和生产率。

3. 发明申请

US20090214401A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20090214401A1
公开(公告)日：2009-08-27
申请号：US12437941
申请日：2009-05-08
申请人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
发明人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
IPC分类号： B01J19/08
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供给与供给的传送气体相同的气体的供给系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

4. 发明申请

US20130019894A1 PLASMA PROCESSING METHOD AND PLASMA ASHING APPARATUS 审中-公开
标题翻译：等离子体处理方法和等离子体吸附装置
公开(公告)号：US20130019894A1
公开(公告)日：2013-01-24
申请号：US13535404
申请日：2012-06-28
申请人： Yutaka KUDOU , Shin HIYAMA
发明人： Yutaka KUDOU , Shin HIYAMA
IPC分类号： B08B7/00 , B08B13/00
CPC分类号： H01J37/321
摘要： In a plasma ashing processing on a sample including a Low-k film, a processing method that can prevent or reduce a film damage on the Low-k film while performing a high speed ashing processing is provided. A plasma processing method for performing a plasma processing on the sample including a Low-k film 15 includes: a step of performing plasma etching on the sample; and a step of performing plasma ashing on the sample including the Low-k film 15 with a resist mask 13, a carbon hard mask 14, and by-products 16 that have been subjected to plasma etching in the plasma etching process by a carbon (C+) radical 18 and a hydrogen (H+) radical 20 generated from methane (CH4) gas 19, using mixed gas including the methane (CH4) gas 19, which is hydrocarbon gas, and argon (Ar) gas, which is noble gas.
摘要翻译：在包括Low-k膜的样品的等离子体灰化处理中，提供了可以在执行高速灰化处理时可以防止或减少Low-k膜上的膜损伤的处理方法。对包含Low-k膜15的样品进行等离子体处理的等离子体处理方法包括：对样品进行等离子体蚀刻的步骤; 以及在等离子体蚀刻工艺中用碳进行等离子体蚀刻的具有抗蚀剂掩模13，碳硬掩模14和副产物16的包含Low-k膜15在内的样品上进行等离子体灰化的步骤 C +）基团18和由甲烷（CH4）气体19产生的氢（H +）自由基20，使用包括作为惰性气体的烃气体的甲烷（CH 4）气体19和作为惰性气体的氩（Ar）气）的混合气体。

5. 发明授权

US08288287B2 Etching method and etching equipment 有权
标题翻译：蚀刻方法和蚀刻设备
公开(公告)号：US08288287B2
公开(公告)日：2012-10-16
申请号：US12054095
申请日：2008-03-24
申请人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
发明人： Kazuo Takata , Yutaka Kudou , Satoshi Tani
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/76898
摘要： The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.
摘要翻译：本发明提供一种用于实现沟槽蚀刻的蚀刻方法，而不会在保持高蚀刻速率的同时对沟槽的侧壁造成任何损坏。等离子体蚀刻方法涉及通过在硅衬底或具有氧化硅电介质层的硅衬底上形成硅沟槽来形成沟槽或孔，该混合气体等离子体包含SF6和O2的混合气体或SF6的混合气体，O 2和SiF 4，并且向其中加入含有氢气的气体在混合气体的总气体流量的5至16％（浓度百分比）的范围内。

6. 发明授权

US08277563B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08277563B2
公开(公告)日：2012-10-02
申请号：US13019131
申请日：2011-02-01
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室，在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。

7. 发明申请

US20120093617A1 VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 审中-公开
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20120093617A1
公开(公告)日：2012-04-19
申请号：US13011041
申请日：2011-01-21
申请人： Yutaka Kudou , Hiroaki Takikawa , Takahiro Shimomura , Masakazu Isozaki , Takashi Uemura
发明人： Yutaka Kudou , Hiroaki Takikawa , Takahiro Shimomura , Masakazu Isozaki , Takashi Uemura
IPC分类号： H01L21/67
CPC分类号： H01L21/67745 , H01L21/67748
摘要： A vacuum processing apparatus including a processing chamber for processing a sample to be processed, a cooling chamber for cooling the high-temperature sample processed in the processing chamber, and a vacuum transfer chamber for establishing a connection between the processing chamber and the cooling chamber, a vacuum transfer robot equipped inside the vacuum transfer chamber, wherein the cooling chamber includes a gas-exhausting unit for reducing pressure inside the cooling chamber, a gas-supplying unit for supplying a gas into the cooling chamber, a pressure-controlling unit for controlling the pressure inside the cooling chamber, a supporting unit for supporting the high-temperature sample, and a mounting stage for proximity-holding the sample supported by the supporting unit, the mounting stage having a temperature-adjusting unit for adjusting the temperature of surface of the mounting stage into a temperature which is capable of cooling the high-temperature sample, the supporting unit having an ascending/descending-speed varying unit.
摘要翻译：一种真空处理设备，包括处理待处理样品的处理室，用于冷却在处理室中处理的高温样品的冷却室和用于建立处理室和冷却室之间的连接的真空传送室，设置在真空传送室内部的真空传送机器人，其中冷却室包括用于减小冷却室内的压力的排气单元，用于将气体供应到冷却室中的气体供应单元，用于控制冷却室内的压力，用于支撑高温试样的支撑单元和用于接近保持由支撑单元支撑的样品的安装台，安装台具有用于调节表面温度的温度调节单元将安装阶段转换成能够冷却高温样品的载体 g单元具有上升/下降速度变化单元。

8. 发明申请

US20110120495A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20110120495A1
公开(公告)日：2011-05-26
申请号：US13019131
申请日：2011-02-01
申请人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

9. 发明授权

US07909933B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07909933B2
公开(公告)日：2011-03-22
申请号：US12437941
申请日：2009-05-08
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

10. 发明授权

US07642194B2 Method for etching and apparatus for etching 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US07642194B2
公开(公告)日：2010-01-05
申请号：US11505375
申请日：2006-08-17
申请人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
发明人： Yuji Kato , Eiji Ishikawa , Yutaka Kudou , Satoshi Tani , Kazuo Takata
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.
摘要翻译：在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频偏压被间歇地施加到SOI衬底。在施加步骤中，高频偏置是时间调制的高频电。根据蚀刻方法，可以提高屈服率和生产率。

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