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1. 发明授权

US5110408A Process for etching 失效
标题翻译：蚀刻工艺
公开(公告)号：US5110408A
公开(公告)日：1992-05-05
申请号：US658254
申请日：1991-02-20
申请人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
发明人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
摘要翻译：本发明涉及栅极膜，钨膜，硅膜等的蚀刻。在本发明中，使用包括由还原氟化物气体，烃气体和卤素组成的混合物的蚀刻气体具有比待蚀刻材料更大的原子直径的气体或由还原性氟化物气体和含Cl的烃气体组成的混合物，该方法包括用蚀刻气体进行各向异性腐蚀蚀刻的步骤（还原氟化物气体），通过沉积气体（烃气体）形成保护膜的步骤，以及通过与保护膜反应的气体（卤素气体）除去形成为保护膜的多余的沉积物的步骤或含Cl的氢气），其中通过在侧壁上形成保护膜进行各向异性蚀刻，同时除去形成为保护膜的多余的沉积物，从而能够进行各向异性蚀刻准确度好

2. 发明授权

US06235146B1 Vacuum treatment system and its stage 有权
标题翻译：真空处理系统及其阶段
公开(公告)号：US06235146B1
公开(公告)日：2001-05-22
申请号：US09313253
申请日：1999-05-18
申请人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
发明人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
IPC分类号： H01L2100
CPC分类号： H01L21/67023 , H01J2237/2001 , Y10S156/914
摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.
摘要翻译：具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成或者在电极部件上形成钛合金和静电吸引用的电介质膜。为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

3. 发明授权

US06867144B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理高速半导体电路的装置和方法，其产量增加
公开(公告)号：US06867144B2
公开(公告)日：2005-03-15
申请号：US10138635
申请日：2002-05-06
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302
CPC分类号： H01J37/32706
摘要： A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.
摘要翻译：晶片的等离子体蚀刻方法包括以下步骤：将具有栅极氧化膜的晶片静电吸引到真空处理室中的晶片安装电极上，基于蚀刻配方将混合气体引入真空处理室，产生真空处理室内部的磁场，在真空处理室内产生等离子体，向晶片施加偏置功率，将等离子体中的离子加速朝向晶片，将晶片安装电极的一部分的阻抗设定为对应于从晶片安装电极的晶片安装电极的对应于晶片外周的位置的晶片安装电极的晶片安装电极的中心部分的角度看，晶片的外周是从偏压电源观察到的值并形成在用于静电吸引晶片的绝缘膜下。

4. 发明授权

US6077788A Method and apparatus for processing samples 失效
标题翻译：样品处理方法和装置
公开(公告)号：US6077788A
公开(公告)日：2000-06-20
申请号：US469998
申请日：1995-06-06
申请人： Yoshinao Kawasaki , Hironobu Kawahara , Yoshiaki Sato , Ryooji Fukuyama , Kazuo Nojiri , Yoshimi Torii
发明人： Yoshinao Kawasaki , Hironobu Kawahara , Yoshiaki Sato , Ryooji Fukuyama , Kazuo Nojiri , Yoshimi Torii
IPC分类号： C23F4/00 , H01L21/00 , H01L21/677 , H01L21/302 , C23F1/02
CPC分类号： H01L21/67161 , C23F4/00 , H01L21/67028 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.
摘要翻译：公开了用于处理样品的装置以及使用该装置的方法。该装置包括用于处理样品的处理装置（例如，等离子体蚀刻装置，通过使用抗蚀剂掩模选择性地蚀刻样品），（b）去除（灰化）抗蚀剂掩模，（c）处理样品和（d）干燥处理样品。样品从供应盒（含有多个样品）顺序地通过另一个装置和放电盒（可以容纳多个样品）通过等离子体蚀刻装置。至少两个样品可以在等离子体蚀刻装置（并且包括）湿法处理结构的路径中（并且包括）的同时进行处理。

5. 发明授权

US5861601A Microwave plasma processing apparatus and method 失效
标题翻译：微波等离子体处理装置及方法
公开(公告)号：US5861601A
公开(公告)日：1999-01-19
申请号：US340337
申请日：1994-11-14
申请人： Yoshiaki Sato , Mitsuru Katamoto , Hironobu Kawahara , Minoru Soraoka , Tsuyoshi Umemoto , Hideki Kihara , Katsuyoshi Kudo , Tooru Yukimasa , Hirofumi Kakutani
发明人： Yoshiaki Sato , Mitsuru Katamoto , Hironobu Kawahara , Minoru Soraoka , Tsuyoshi Umemoto , Hideki Kihara , Katsuyoshi Kudo , Tooru Yukimasa , Hirofumi Kakutani
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/32495 , H01J37/32192 , H01J37/32229 , H01J37/32256 , H01J37/32678 , H01J37/32862
摘要： The present invention relates to a microwave plasma processing apparatus, suited for generating a plasma by using microwaves, and a processing method. Microwaves propagated through a circular waveguide are tuned in the space thereof by a microwave tuner that is installed to match the impedance, and are introduced in a uniform and most efficient state into a discharge block having a plasma-resistant inner surface that is enlarged in a tapered form through a microwave introduction window. Then, a processing gas controlled to a predetermined pressure by a gas supplying structure and gas evacuating structure is turned into a plasma which is more uniform and is more dense by interaction of a microwave electric field that is efficiently introduced and a magnetic field produced by a solenoid coil.
摘要翻译：本发明涉及适用于通过使用微波产生等离子体的微波等离子体处理装置及其处理方法。通过圆形波导传播的微波通过微波调谐器调谐，微波调谐器被安装成与阻抗匹配，并以均匀和最有效的状态被引入到具有等离子体的内表面的放电块中，该等离子体内表面在锥形通过微波引入窗口。然后，通过气体供给结构和气体排出结构控制到预定压力的处理气体变成等离子体，其通过有效引入的微波电场和由有效引入的磁场的磁场的相互作用而更均匀并且更致密电磁线圈。

6. 发明授权

US06656846B2 Apparatus for processing samples 失效
公开(公告)号：US06656846B2
公开(公告)日：2003-12-02
申请号：US09847406
申请日：2001-05-03
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： H01L213065
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

7. 发明授权

US06537012B2 Vacuum processing apparatus and a vacuum processing system 失效
公开(公告)号：US06537012B2
公开(公告)日：2003-03-25
申请号：US10086709
申请日：2002-03-04
申请人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
发明人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
IPC分类号： H01L213065
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67196 , H01L21/67201 , H01L21/67207 , Y10S414/135 , Y10S414/139
摘要： The vacuum processing apparatus has an atmospheric loader having a plurality of cassette tables and a transport unit for carrying wafers, a vacuum loader equipped with vacuum wafer-processing chambers and a vacuum transport chamber communicating with the processing chambers via gate valves, and a locking unit provided with a loading lock chamber and unloading lock chambers that have gate valves for connecting the atmospheric transport unit and vacuum transport chamber; wherein two etching chambers, formed by UHF-ECR reactors, are arranged symmetrically with respect to an axial line passing through the middle of the vacuum transport chamber and locking unit, only at the opposite side of the locking unit across the vacuum transport chamber, and at an acute angle with respect to the vacuum transport chamber, and UHF-ECR antennas, almost parallel to the foregoing axial line, are opened at the opposite side to that of the vacuum transport chamber.

8. 发明授权

US5900162A Plasma etching method and apparatus 失效
标题翻译：等离子体蚀刻方法和装置
公开(公告)号：US5900162A
公开(公告)日：1999-05-04
申请号：US735668
申请日：1991-07-26
申请人： Hironobu Kawahara , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama
发明人： Hironobu Kawahara , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/32706 , H01L21/3065 , H01L21/30655 , H01L21/32136 , Y10S438/906
摘要： The present invention relates to a plasma etching method and apparatus, and more particularly to a plasma etching method and apparatus which are well suited for etching the samples of semiconductor device substrates, etc. In cooling a sample to a temperature not higher than 0.degree. C. which is a minimum temperature of water and subjecting the sample to an etching process with a gas plasma, an acceleration voltage which accelerates ions in the gas plasma toward the sample is repeatedly changed, whereby in a process based on low-temperature etching, an etching process producing no residue, being anisotropic and being highly selective is realized.
摘要翻译：等离子体蚀刻方法和装置技术领域本发明涉及一种等离子体蚀刻方法和装置，更具体地涉及一种非常适合蚀刻半导体器件基板样品等离子体蚀刻方法和装置。在将样品冷却至不高于0℃的温度下其是水的最低温度，并且利用气体等离子体对样品进行蚀刻处理，将气体等离子体中的离子加速到样品的加速电压重复变化，由此在基于低温蚀刻的工艺中，实现不产生残留物，各向异性，高选择性的蚀刻工艺。

9. 发明授权

US5868854A Method and apparatus for processing samples 失效
公开(公告)号：US5868854A
公开(公告)日：1999-02-09
申请号：US987171
申请日：1992-12-08
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： C23F4/00 , H01J37/18 , H01L21/00 , H01L21/3213 , H01L21/461 , H01L21/677 , B08B6/00 , H01L21/302
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

10. 发明授权

US5770100A Method of treating samples 失效
公开(公告)号：US5770100A
公开(公告)日：1998-06-23
申请号：US662142
申请日：1996-06-12
申请人： Ryooji Fukuyama , Makoto Nawata , Yutaka Kakehi , Hironobu Kawahara , Yoshiaki Sato , Yoshimi Torii , Akira Kawaraya , Yoshie Sato
发明人： Ryooji Fukuyama , Makoto Nawata , Yutaka Kakehi , Hironobu Kawahara , Yoshiaki Sato , Yoshimi Torii , Akira Kawaraya , Yoshie Sato
IPC分类号： C23F4/00 , H01L21/02 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , C23F4/00 , Y10S438/906 , Y10T428/12528 , Y10T428/12736 , Y10T428/31678
摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

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