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1. 发明授权

US06443165B1 Method for cleaning plasma treatment device and plasma treatment system 有权
标题翻译：等离子体处理装置和等离子体处理系统的清洗方法
公开(公告)号：US06443165B1
公开(公告)日：2002-09-03
申请号：US09101554
申请日：1998-09-21
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
IPC分类号： B08B600
CPC分类号： C23C16/4405
摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.
摘要翻译：一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。另一方面，F分散为F2。因此，去除CF膜。

2. 发明授权

US06355902B2 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06355902B2
公开(公告)日：2002-03-12
申请号：US09750683
申请日：2001-01-02
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

3. 发明授权

US06215087B1 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06215087B1
公开(公告)日：2001-04-10
申请号：US09101516
申请日：1998-07-10
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

4. 发明授权

US06087614A Plasma treating device 失效
标题翻译：等离子体处理装置
公开(公告)号：US06087614A
公开(公告)日：2000-07-11
申请号：US101668
申请日：1998-10-29
申请人： Shuichi Ishizuka , Risa Nakase , Takeshi Aoki
发明人： Shuichi Ishizuka , Risa Nakase , Takeshi Aoki
IPC分类号： H01L21/31 , H01J37/32 , B23K9/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32284
摘要： The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.
摘要翻译： PCT No.PCT / JP97 / 04225 Sec。 371日期：1998年10月29日第 102（e）日期1998年10月29日PCT 1997年11月20日PCT公布。公开号WO98 / 22977 日期1998年5月28日本发明旨在产生在宽范围内具有均匀密度的等离子体，并且能够高度均匀地实现晶片表面（W）的等离子体处理。透射微波的透射窗（23）保持在具有等离子体室（21）和成膜室（22）的真空容器（2）的上壁上，以及用于引导微波的波导以TM模式传播到真空容器（2）中的2.45GHz接合到透射窗（23）的外表面。波导管（4）具有矩形波导部分（41），用作TM转换器的圆柱形波导部分（42）和具有连接到透射窗（23）的外表面的出射端的锥形波导部分（43）。微波以TM模式传播到真空容器（2）中，并且在真空容器（2）中产生磁场。如果锥形波导部分的出口端的内径（A）在130至160mm的范围内，则可以在等离子体室（21）中以均匀的密度形成等离子体，使得高度均匀的等离子体处理可以实现例如8英寸直径的晶片（W）的表面。

5. 发明授权

US06320154B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06320154B1
公开(公告)日：2001-11-20
申请号：US09101504
申请日：1999-04-27
申请人： Takashi Akahori , Risa Nakase , Shinsuke Oka
发明人： Takashi Akahori , Risa Nakase , Shinsuke Oka
IPC分类号： B23K1000
CPC分类号： H01J37/32192 , C23C16/4401 , C23C16/4405 , C23C16/511 , C23C16/52 , H01J2237/022
摘要： An objective of this invention is to provide a plasma processing method that is capable of reducing particle contamination during plasma processing performed upon a semiconductor wafer. If the use of electron cyclotron resonance to generate a plasma and form a thin film of SiOF or the like is used by way of example, a sheath zone of a few mm thick is formed between the wafer and the plasma, and particles are trapped within a boundary zone between the sheath zone and the plasma. At this point, a microwave power is not dropped suddenly to zero after the film-formation processing, but is reduced to a lower level of, for example, 1 kW and is held for 10 seconds. This reduces the plasma density and thickens the sheath zone, so that particles are held away from the wafer surface. When the microwave power is subsequently cut, the particles move freely around, but only a small proportion thereof adhere to the wafer.
摘要翻译：本发明的目的是提供一种等离子体处理方法，其能够减少在半导体晶片上进行的等离子体处理期间的颗粒污染。如果使用电子回旋加速器共振来产生等离子体并形成SiOF薄膜等，则在晶片和等离子体之间形成有几毫米厚的鞘层，并且颗粒被捕获在鞘区和等离子体之间的边界区。此时，微波功率在成膜处理后不会突然下降到零，而是降低到例如1kW的较低水平并保持10秒。这降低了等离子体密度并增加了皮肤区域，使得颗粒被保持远离晶片表面。当微波功率随后被切割时，颗粒自由地移动，但只有一小部分粘附在晶片上。

6. 发明授权

US06770332B2 Method for forming film by plasma 失效
标题翻译：用等离子体形成薄膜的方法
公开(公告)号：US06770332B2
公开(公告)日：2004-08-03
申请号：US09573412
申请日：2000-05-18
申请人： Risa Nakase , Takeshi Aoki , Akira Suzuki , Yoshihiro Kato
发明人： Risa Nakase , Takeshi Aoki , Akira Suzuki , Yoshihiro Kato
IPC分类号： H05H146
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/30 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801
摘要： In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability. A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.
摘要翻译：在将CF膜用作半导体器件的层间电介质文件的情况下，当形成钨的布线时，将CF膜加热至例如约400〜450℃的温度。在此时间，从CF膜发射含F气体，由于布线的腐蚀和膜厚度的降低，存在各种缺点。为了防止这种情况，需要提高热稳定性。使用C和F的复合气体，例如C 4 F 8气体，烃气体例如C 2 H 4气体和CO气体作为薄膜沉积气体。这些气体被激活，以使其活性物质在400℃的处理温度下在半导体晶片10上沉积CF膜。由于通过添加CO气体，类金刚石键的数量大于石墨状键的数量，所以即使在高温下也会使键强化，难以切断，从而提高热稳定性。

7. 发明授权

US06544901B1 Plasma thin-film deposition method 失效
标题翻译：等离子体薄膜沉积法
公开(公告)号：US06544901B1
公开(公告)日：2003-04-08
申请号：US09578726
申请日：2000-05-26
申请人： Risa Nakase
发明人： Risa Nakase
IPC分类号： H01L21469
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/30 , H01L21/02274 , H01L21/3127 , H01L21/314 , H01L21/76801
摘要： As thin-film deposition gases, cyclic C5F8 gas and a hydrocarbon gas, e.g., C2H4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof. Alternatively, cyclic C6F6 gas is used as a thin-film deposition gas, and activated as plasma under a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof.
摘要翻译：作为薄膜沉积气体，使用环状C 5 F 8气体和烃气体，例如C 2 H 4气体。这些气体在例如0.1托的压力下作为等离子体活化，以使用其活性物质在400℃的温度下在半导体晶片上沉积CF膜。或者，环状C 6 F 6气体用作薄膜沉积气体，并且在例如0.06Pa的压力下作为等离子体活化，以在400℃的工艺温度下在半导体晶片上沉积CF膜，使用活性物质其中。

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