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1. 发明授权

US06727182B2 Process for the production of semiconductor device 失效
标题翻译：半导体器件生产工艺
公开(公告)号：US06727182B2
公开(公告)日：2004-04-27
申请号：US09101308
申请日：1998-10-15
申请人： Takashi Akahori , Shuichi Ishizuka , Shunichi Endo , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Shuichi Ishizuka , Shunichi Endo , Takeshi Aoki , Tadashi Hirata
IPC分类号： H01L21302
CPC分类号： H01L21/31144 , H01L21/31138 , H01L21/76802 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.
摘要翻译：本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。然而，由于TiN膜41用作掩模，因此可以形成预定的孔。尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。作为掩模，可以用SiO 2等的绝缘膜代替膜。

2. 发明授权

US06344508B1 Reclaimed pet resin composition, molded article thereof, and flame-retardant resin composition and molded article thereof 失效
标题翻译：再生宠物树脂组合物及其成型体，阻燃性树脂组合物及其成型体
公开(公告)号：US06344508B1
公开(公告)日：2002-02-05
申请号：US09600565
申请日：2000-09-14
申请人： Shunichi Endo , Genichiro Ochiai , Yoshinobu Mizutani , Takuya Miho , Koichi Okumura
发明人： Shunichi Endo , Genichiro Ochiai , Yoshinobu Mizutani , Takuya Miho , Koichi Okumura
IPC分类号： C08K502
CPC分类号： C08L67/02 , C08K3/2279 , C08K5/0066 , C08K5/103 , C08L23/02 , C08L23/10 , C08L23/12 , C08L25/06 , C08L55/02 , C08L67/00 , C08L67/04 , C08L69/00 , C08L71/12 , C08L77/00 , C08L101/00 , C08L2201/02 , C08L2205/03 , C08L2666/20 , C08L2666/06 , C08L2666/02 , C08L2666/18
摘要： In the present invention, the No. I invention relates to a regenerated PET resin composition which comprises formulating 0.5-100 part by weight of a lactone polymer (B) with 100 parts by weight of a regenerated PET resin (A), in which there is improved a molding processability such as an injection moldability and extruding molding, and relates to a molded article therefrom and, the No. II invention relates to a flame retardant resin composition containing a thermoplastic resin (E) and a flame retardant (F), in which bleeding of the flame retardant is suppressed without a decline of a flame retardancy, and relates to a molded article therefrom.
摘要翻译：在本发明中，本发明涉及一种再生PET树脂组合物，其包括用100重量份的再生PET树脂（A）配制0.5-100重量份的内酯聚合物（B），其中，提高了成型加工性，例如注射成型性和挤出成型性，并涉及到其中的成型品，并且本发明涉及含有热塑性树脂（E）和阻燃剂（F）的阻燃性树脂组合物，其中阻燃剂的渗出在阻燃性下降的情况下被抑制，并且与其成型制品相关。

3. 发明授权

US5942561A Fire-retardant polymer composition 失效
标题翻译：阻燃聚合物组合物
公开(公告)号：US5942561A
公开(公告)日：1999-08-24
申请号：US610134
申请日：1996-02-29
申请人： Fumio Okisaki , Akinori Hamada , Shunichi Endo , Genichiro Ochiai
发明人： Fumio Okisaki , Akinori Hamada , Shunichi Endo , Genichiro Ochiai
IPC分类号： C08K3/04 , C08K3/32 , C09K21/14
CPC分类号： C08K3/04 , C08K3/32
摘要： A fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polystyrene, 1 to 30 parts by weight of heat-expandable graphite, and 1 to 30 parts by weight of a phosphorus compound. The polymer composition is fire-retardant, and emits less smoke and less corrosive gas on burning.
摘要翻译：提供了一种阻燃聚合物组合物，其包含100重量份聚合物如聚苯乙烯，1〜30重量份的热膨胀性石墨和1〜30重量份的磷化合物。聚合物组合物是阻燃剂，并且在燃烧时排出较少的烟雾和较少的腐蚀性气体。

4. 发明授权

US06355902B2 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06355902B2
公开(公告)日：2002-03-12
申请号：US09750683
申请日：2001-01-02
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

5. 发明授权

US06215087B1 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06215087B1
公开(公告)日：2001-04-10
申请号：US09101516
申请日：1998-07-10
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

6. 发明授权

US5760115A Fire-retardant polymer composition 失效
公开(公告)号：US5760115A
公开(公告)日：1998-06-02
申请号：US609902
申请日：1996-02-29
申请人： Fumio Okisaki , Akinori Hamada , Shunichi Endo , Genichiro Ochiai
发明人： Fumio Okisaki , Akinori Hamada , Shunichi Endo , Genichiro Ochiai
IPC分类号： C08K3/04 , C08K3/22
CPC分类号： C08K3/22 , C08K3/04
摘要： A novel fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polyolefins and polystyrenes, 1-30 parts by weight of an oxide or a complex oxide of metals such as antimony, boron, and molybdenum, and 1-30 parts by weight of heat-expandable graphite. The fire-retardant polymer composition emits less amounts of smoke and corrosive gas on burning with the characteristics of the polymer material kept unimpaired.

7. 发明授权

US5797820A Slat band chain and sprocket 失效
标题翻译：板条链和链轮
公开(公告)号：US5797820A
公开(公告)日：1998-08-25
申请号：US967191
申请日：1997-10-29
申请人： Shunichi Endo
发明人： Shunichi Endo
IPC分类号： B65G17/08 , F16G13/02 , B65G17/06
CPC分类号： B65G17/08 , B65G2201/02
摘要： The present invention provides a slat band chain for both straight and curved lines and a sprocket made of synthetic resin which the chain can engage with every other tooth of the sprocket. At least three reinforcement ribs 24a-24c connecting the front curled portions 14 with the rear curled portions 16 are installed. The width B, and the length C, of the rear curled portions in the feeding direction are set to the intermediate value of those conventional slat band chains for straight and curved lines.
摘要翻译：本发明提供了一种用于直线和弯曲线的板条带链和由合成树脂制成的链轮，链条可与链轮的每隔一个齿啮合。安装连接前卷曲部分14和后卷曲部分16的至少三个加强肋24a-24c。后卷曲部分在进给方向上的宽度B和长度C被设定为用于直线和曲线的那些常规板条带的中间值。

8. 发明授权

US06429518B1 Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film 失效
标题翻译：具有氟加成膜作为层间绝缘膜的半导体装置
公开(公告)号：US06429518B1
公开(公告)日：2002-08-06
申请号：US09659342
申请日：2000-09-12
申请人： Shunichi Endo
发明人： Shunichi Endo
IPC分类号： H01L2348
CPC分类号： H01L21/02167 , H01L21/0212 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/0445 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into plasma to stack a SiC film [200] as the contact layer on the top surface of a SiO2 film [110]. After that, switching of deposition gases is conducted for about 1 second by introducing SiH4 gas, C2H4 gas, C4F8 gas and C2H4 gas. Subsequently, CF film deposition gases, such as C4F8 gas and C2H4 gas, for example, are excited into plasma to deposit[e] a CF film [120] on the SiC film [200]. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si—C bonds are produced near the boundary between the SiC film [200] and the CF film [120] across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO2 film [110] and the CF film [120].
摘要翻译：在半导体器件中，在含硅绝缘膜SiO 2等或金属布线层和含氟碳CF膜之间设置接触层以增加其粘合性。为此，将SiC膜沉积气体如SiH 4气体和C 2 H 4气体激发到等离子体中以将SiO 2膜[200]作为接触层堆叠在SiO 2膜的顶表面上[110]。之后，通过引入SiH 4气体，C 2 H 4气体，C 4 F 8气体和C 2 H 4气体，沉积气体的切换进行约1秒。随后，诸如C 4 F 8气体和C 2 H 4气体的CF膜沉积气体例如被激发到等离子体中以在SiC膜[200]上沉积CF膜[120]。以这种方式，在沉积气体切换步骤期间，同时存在SiC膜沉积气体和CF膜沉积气体，由此在SiC膜[200]和CF膜[120]之间的边界附近产生Si-C键这些膜，并且它们增强了这些膜之间的粘附性，因此增加了SiO 2膜[110]和CF膜[120]的粘附性。

9. 发明授权

US06218299B1 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06218299B1
公开(公告)日：2001-04-17
申请号：US09101244
申请日：1998-07-06
申请人： Takashi Akahori , Yoko Naito , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Yoko Naito , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： H01L2144
CPC分类号： H01L21/0212 , C23C16/029 , C23C16/26 , C23C16/325 , H01L21/02115 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76801 , H01L21/76819 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L21/7685 , H01L21/76856
摘要： For example, in a plasma processing system, C4F8 gas and C2H4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.
摘要翻译：例如，在等离子体处理系统中，在压力为0.2Pa，微波功率为2.7kW的条件下，分别以60sccm和30sccm的流量将C4F8气体和C2H4气体作为成膜气体引入， 1.5kW的射频功率和350℃的晶片温度。同时，还以150sccm的流量引入等离子体气体以形成F含量例如为22％的CF膜13，该硅膜13的相对介电常数为2.4。

10. 发明授权

US06468603B1 Plasma film forming method utilizing varying bias electric power 失效
标题翻译：使用不同偏置电力的等离子体成膜方法
公开(公告)号：US06468603B1
公开(公告)日：2002-10-22
申请号：US09663715
申请日：2000-09-18
申请人： Shunichi Endo , Tadashi Hirata
发明人： Shunichi Endo , Tadashi Hirata
IPC分类号： C23C1626
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/3127 , H01L21/76837
摘要： This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10. According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.
摘要翻译：本发明是一种在包括用于待处理物体10的台架4的真空容器2中将包括碳和氟的复合气体的成膜气体制成等离子体的方法; 并且为了将等离子体中的离子朝向物体10施加偏置电力，同时通过等离子体将由氟加成碳膜构成的绝缘膜形成在物体10上。首先，将偏置电力的第一电力施加到载物台4，并以第一流量引入碳氟的复合气体，以在对象10上形成氟加成膜的膜。然后，将将第一功率小于第一功率的偏置电力的第二电力施加到载物台4，并以比第一流量小的第二流量引入碳氟化合物气体，以形成氟加成膜根据本发明，在用含氟碳膜填充具有高纵横比的凹部的情况下，可以在产生较少的具有提高的生产量的空隙的同时进行成膜过程。

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